Serveur d'exploration sur l'Indium - Analysis (France)

Index « Keywords » - entrée « Semiconductor heterojunctions »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Semiconductor growth < Semiconductor heterojunctions < Semiconductor insulator contact  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]
Ident.Authors (with country if any)Title
000A37 (2004-04-05) Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000C02 (2003-12-15) Insulating states of a broken-gap two-dimensional electron-hole system
000C24 (2003-08-15) Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys
000C27 (2003-08-11) In-plane resonant cavities with photonic crystal boundaries etched in InP-based heterostructure
000E27 (2002-10-28) Real-time assessment of In surface segregation during the growth of AlSb/InAs(Sb) heterostructures
000E59 (2002-06-01) Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
000E63 (2002-05-15) Electronic structure of the GaSe/Si(111) and InSe/Si(111) heterojunctions
001059 (2001-12-01) Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
001096 (2001-06-01) Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures
001111 (2001-03-15) Mini-stopbands of a one-dimensional system: The channel waveguide in a two-dimensional photonic crystal
001511 (1999-12) Strain relaxation in surface nano-structures studied by X-ray diffraction methods
001557 (1999-06-28) An efficient way to improve compositional abruptness at the GaAs on GaInAs interface
001573 (1999-05-15) Impact ionization in InAlAs/InP single channel heterojunction field effect transistors
001589 (1999-02-15) Type II and mixed type I-II radiative recombinations in AlInAs-InP heterostructures
001597 (1999-02) New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials
001646 (1999) Surface passivation of composition graded base in GaAlAs/GalnP/GaAs heterojunction bipolar transistor
001804 (1998-11-15) Determination of the phase of magneto-intersubband scattering oscillations in heterojunctions and quantum wells
001808 (1998-11-01) Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces
001819 (1998-10-15) Local atomic structure in strained interfaces of InxGa1-xAs/InP heterostructures
001828 (1998-10) Theoretical and experimental study of spatial resolution in quantum-well spatial light modulators
001830 (1998-09-01) Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i -k "Semiconductor heterojunctions" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/KwdEn.i  \
                -Sk "Semiconductor heterojunctions" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Semiconductor heterojunctions
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024