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Semiconductor electrolytic contacts < Semiconductor epitaxial layers < Semiconductor growth  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 69.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000A32 (2004-05-01) From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000A51 (2004-01-01) Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers
000C06 (2003-12-08) Raman study of the A1(LO) phonon in relaxed and pseudomorphic InGaN epilayers
000C12 (2003-10-15) Quantitative determination of short-range ordering in InxGa1-xAs1-yNy
000C13 (2003-10-15) Electrical characterization of InGaN/GaN light emitting diodes grown by molecular beam epitaxy
000C16 (2003-09-01) Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds
000C19 (2003-08-18) Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN
000C22 (2003-08-15) Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000C23 (2003-08-15) Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells
000C25 (2003-08-15) Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy
000C46 (2003-04-07) In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy
000C60 (2003-02-10) Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime
000C61 (2003-02-01) Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
000C65 (2003-01-01) Conduction band offset in the AlxGayIn1-x-yP/Ga0.52In0.48P system as studied by luminescence spectroscopy
000D18 (2003) Optical signature of atomic ordering in In0.53Ga0.47As/InP: photoluminescence properties and IR response
000E20 (2002-11-15) Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy
000E36 (2002-09-01) Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
000E52 (2002-06-15) Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening
000E59 (2002-06-01) Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
000E60 (2002-06-01) Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers
001078 (2001-09-15) Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures

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