Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.
Identifieur interne : 000446 ( PubMed/Checkpoint ); précédent : 000445; suivant : 000447Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.
Auteurs : Senlin Yang [République populaire de Chine] ; Xuefeng Wang ; Haitao Guo ; Guoping Dong ; Bo Peng ; Jianrong Qiu ; Rong Zhang ; Yi ShiSource :
- Optics express [ 1094-4087 ] ; 2011.
Descripteurs français
- KwdFr :
- MESH :
- effets des radiations : Chalcogènes, Thulium.
- Bencyclane, Chalcogènes, Galvanoplastie, Lasers, Membrane artificielle, Rayons infrarouges, Test de matériaux, Thulium.
English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Bencyclane, Chalcogens, Thulium.
- chemical , radiation effects : Chalcogens, Thulium.
- methods : Electroplating.
- Infrared Rays, Lasers, Materials Testing, Membranes, Artificial.
Abstract
Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.
PubMed: 22274237
Affiliations:
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sort="Wang, Xuefeng" uniqKey="Wang X" first="Xuefeng" last="Wang">Xuefeng Wang</name></author><author><name sortKey="Guo, Haitao" sort="Guo, Haitao" uniqKey="Guo H" first="Haitao" last="Guo">Haitao Guo</name></author><author><name sortKey="Dong, Guoping" sort="Dong, Guoping" uniqKey="Dong G" first="Guoping" last="Dong">Guoping Dong</name></author><author><name sortKey="Peng, Bo" sort="Peng, Bo" uniqKey="Peng B" first="Bo" last="Peng">Bo Peng</name></author><author><name sortKey="Qiu, Jianrong" sort="Qiu, Jianrong" uniqKey="Qiu J" first="Jianrong" last="Qiu">Jianrong Qiu</name></author><author><name sortKey="Zhang, Rong" sort="Zhang, Rong" uniqKey="Zhang R" first="Rong" last="Zhang">Rong Zhang</name></author><author><name sortKey="Shi, Yi" sort="Shi, Yi" uniqKey="Shi Y" first="Yi" last="Shi">Yi Shi</name></author></titleStmt><publicationStmt><idno type="wicri:source">PubMed</idno><date when="2011">2011</date><idno type="RBID">pubmed:22274237</idno><idno type="pmid">22274237</idno><idno 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Nanjing, China.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing</wicri:regionArea><wicri:noRegion>Nanjing</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Xuefeng" sort="Wang, Xuefeng" uniqKey="Wang X" first="Xuefeng" last="Wang">Xuefeng Wang</name></author><author><name sortKey="Guo, Haitao" sort="Guo, Haitao" uniqKey="Guo H" first="Haitao" last="Guo">Haitao Guo</name></author><author><name sortKey="Dong, Guoping" sort="Dong, Guoping" uniqKey="Dong G" first="Guoping" last="Dong">Guoping Dong</name></author><author><name sortKey="Peng, Bo" sort="Peng, Bo" uniqKey="Peng B" first="Bo" last="Peng">Bo Peng</name></author><author><name sortKey="Qiu, Jianrong" sort="Qiu, Jianrong" uniqKey="Qiu J" first="Jianrong" last="Qiu">Jianrong Qiu</name></author><author><name sortKey="Zhang, Rong" sort="Zhang, Rong" uniqKey="Zhang R" first="Rong" last="Zhang">Rong Zhang</name></author><author><name sortKey="Shi, Yi" sort="Shi, Yi" uniqKey="Shi Y" first="Yi" last="Shi">Yi Shi</name></author></analytic><series><title level="j">Optics express</title><idno type="eISSN">1094-4087</idno><imprint><date when="2011" type="published">2011</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bencyclane (chemistry)</term><term>Chalcogens (chemistry)</term><term>Chalcogens (radiation effects)</term><term>Electroplating (methods)</term><term>Infrared Rays</term><term>Lasers</term><term>Materials Testing</term><term>Membranes, Artificial</term><term>Thulium (chemistry)</term><term>Thulium (radiation effects)</term></keywords><keywords scheme="KwdFr" xml:lang="fr"><term>Bencyclane ()</term><term>Chalcogènes ()</term><term>Chalcogènes (effets 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xml:lang="fr"><term>Bencyclane</term><term>Chalcogènes</term><term>Galvanoplastie</term><term>Lasers</term><term>Membrane artificielle</term><term>Rayons infrarouges</term><term>Test de matériaux</term><term>Thulium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22274237</PMID><DateCreated><Year>2012</Year><Month>01</Month><Day>25</Day></DateCreated><DateCompleted><Year>2012</Year><Month>05</Month><Day>14</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>19</Volume><Issue>27</Issue><PubDate><Year>2011</Year><Month>Dec</Month><Day>19</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.</ArticleTitle><Pagination><MedlinePgn>26529-35</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.19.026529</ELocationID><Abstract><AbstractText>Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. 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PubStatus="medline"><Year>2012</Year><Month>5</Month><Day>15</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">225808</ArticleId><ArticleId IdType="pubmed">22274237</ArticleId></ArticleIdList></PubmedData></pubmed><affiliations><list><country><li>République populaire de Chine</li></country></list><tree><noCountry><name sortKey="Dong, Guoping" sort="Dong, Guoping" uniqKey="Dong G" first="Guoping" last="Dong">Guoping Dong</name><name sortKey="Guo, Haitao" sort="Guo, Haitao" uniqKey="Guo H" first="Haitao" last="Guo">Haitao Guo</name><name sortKey="Peng, Bo" sort="Peng, Bo" uniqKey="Peng B" first="Bo" last="Peng">Bo Peng</name><name sortKey="Qiu, Jianrong" sort="Qiu, Jianrong" uniqKey="Qiu J" first="Jianrong" last="Qiu">Jianrong Qiu</name><name sortKey="Shi, Yi" sort="Shi, Yi" uniqKey="Shi Y" first="Yi" last="Shi">Yi Shi</name><name sortKey="Wang, Xuefeng" sort="Wang, Xuefeng" uniqKey="Wang X" first="Xuefeng" last="Wang">Xuefeng Wang</name><name sortKey="Zhang, Rong" sort="Zhang, Rong" uniqKey="Zhang R" first="Rong" last="Zhang">Rong Zhang</name></noCountry><country name="République populaire de Chine"><noRegion><name sortKey="Yang, Senlin" sort="Yang, Senlin" uniqKey="Yang S" first="Senlin" last="Yang">Senlin Yang</name></noRegion></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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