Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.
Identifieur interne : 000387 ( PubMed/Curation ); précédent : 000386; suivant : 000388Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.
Auteurs : Senlin Yang [République populaire de Chine] ; Xuefeng Wang ; Haitao Guo ; Guoping Dong ; Bo Peng ; Jianrong Qiu ; Rong Zhang ; Yi ShiSource :
- Optics express [ 1094-4087 ] ; 2011.
Descripteurs français
- KwdFr :
- MESH :
- effets des radiations : Chalcogènes, Thulium.
- Bencyclane, Chalcogènes, Galvanoplastie, Lasers, Membrane artificielle, Rayons infrarouges, Test de matériaux, Thulium.
English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Bencyclane, Chalcogens, Thulium.
- chemical , radiation effects : Chalcogens, Thulium.
- methods : Electroplating.
- Infrared Rays, Lasers, Materials Testing, Membranes, Artificial.
Abstract
Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.
PubMed: 22274237
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pubmed:22274237Le document en format XML
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<front><div type="abstract" xml:lang="en">Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.</div>
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