ThuliumV1, Pascal, Curation, bibRecord, 000F56

Effect of Tb3+ co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses

Identifieur interne : 000F56 ( Pascal/Curation ); précédent : 000F55; suivant : 000F57

Effect of Tb3+ co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses

Auteurs : Yong Beom Shin [Corée du Sud] ; Ji Hyun Kim [Corée du Sud] ; You Song Kim [Corée du Sud] ; Jong Heo [Corée du Sud]

Source :

Journal of applied physics [ 0021-8979 ] ; 2000-09-01.

RBID : Pascal:00-0355014

Descripteurs français

Pascal (Inist)
- 7855H, 7155J, Etude expérimentale, Inversion population, Verre germanate, Verre chalcogénure, Gallium composé, Terbium, Thulium, Etat impureté, Fluorescence, Spectre absorption impureté.

English descriptors

KwdEn :
- Chalcogenide glasses, Experimental study, Fluorescence, Gallium compounds, Germanate glasses, Impurity absorption spectra, Impurity states, Population inversion, Terbium, Thulium.

Abstract

The 1.48-μm emission properties and electron population densities of the excited levels were investigated for Ge-As-Ga-S glasses doped with Tm³⁺ or Tm³⁺/Tb³⁺. Electron population inversion between the ³H₄ and ³F₄ levels in Tm³⁺ cannot be achieved without Tb³⁺ addition due to the strong cross-relaxation in Tm³⁺. Co-doping of Tb³⁺ resulted in the large decrease in the population density of the Tm³⁺:³F₄ level via the energy transfer of Tm³⁺:³F₄→Tb³⁺:⁷F_0,1,2. Calculated population densities of the two levels in Tm³⁺ using the rate equations showed that the population inversion became possible through the addition of Tb³⁺. © 2000 American Institute of Physics.

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A08	`01`	`1`	`ENG`	`@1 Effect of Tb³⁺ co-doping on the electron population densities of Tm³⁺ in Ge-As-Ga-S glasses`
A11	`01`	`1`		`@1 SHIN (Yong Beom)`
A11	`02`	`1`		`@1 KIM (Ji Hyun)`
A11	`03`	`1`		`@1 KIM (You Song)`
A11	`04`	`1`		`@1 HEO (Jong)`
A14	`01`			`@1 Photonic Glasses Laboratory, Department of Materials Science and Engineering/School of Environmental Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Korea @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut.`
A20				`@1 2515-2518`
A21				`@1 2000-09-01`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 126`
A44				`@0 8100 @1 © 2000 American Institute of Physics. All rights reserved.`
A47	`01`	`1`		`@0 00-0355014`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Journal of applied physics`
A66	`01`			`@0 USA`
C01	`01`		`ENG`	@0 The 1.48-μm emission properties and electron population densities of the excited levels were investigated for Ge-As-Ga-S glasses doped with Tm³⁺ or Tm³⁺/Tb³⁺. Electron population inversion between the ³H₄ and ³F₄ levels in Tm³⁺ cannot be achieved without Tb³⁺ addition due to the strong cross-relaxation in Tm³⁺. Co-doping of Tb³⁺ resulted in the large decrease in the population density of the Tm³⁺:³F₄ level via the energy transfer of Tm³⁺:³F₄→Tb³⁺:⁷F_0,1,2. Calculated population densities of the two levels in Tm³⁺ using the rate equations showed that the population inversion became possible through the addition of Tb³⁺. © 2000 American Institute of Physics.
C02	`01`	`3`		`@0 001B70H55H`
C02	`02`	`3`		`@0 001B70A55J`
C03	`01`	`3`	`FRE`	`@0 7855H @2 PAC @4 INC`
C03	`02`	`3`	`FRE`	`@0 7155J @2 PAC @4 INC`
C03	`03`	`3`	`FRE`	`@0 Etude expérimentale`
C03	`03`	`3`	`ENG`	`@0 Experimental study`
C03	`04`	`3`	`FRE`	`@0 Inversion population`
C03	`04`	`3`	`ENG`	`@0 Population inversion`
C03	`05`	`3`	`FRE`	`@0 Verre germanate`
C03	`05`	`3`	`ENG`	`@0 Germanate glasses`
C03	`06`	`3`	`FRE`	`@0 Verre chalcogénure`
C03	`06`	`3`	`ENG`	`@0 Chalcogenide glasses`
C03	`07`	`3`	`FRE`	`@0 Gallium composé`
C03	`07`	`3`	`ENG`	`@0 Gallium compounds`
C03	`08`	`3`	`FRE`	`@0 Terbium @2 NC`
C03	`08`	`3`	`ENG`	`@0 Terbium @2 NC`
C03	`09`	`3`	`FRE`	`@0 Thulium @2 NC`
C03	`09`	`3`	`ENG`	`@0 Thulium @2 NC`
C03	`10`	`3`	`FRE`	`@0 Etat impureté`
C03	`10`	`3`	`ENG`	`@0 Impurity states`
C03	`11`	`3`	`FRE`	`@0 Fluorescence`
C03	`11`	`3`	`ENG`	`@0 Fluorescence`
C03	`12`	`3`	`FRE`	`@0 Spectre absorption impureté`
C03	`12`	`3`	`ENG`	`@0 Impurity absorption spectra`
N21				`@1 241`
N47	`01`	`1`		`@0 0034M000408`

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 co-doping on the electron population densities of Tm<sup>3+</sup>
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<author><name sortKey="Shin, Yong Beom" sort="Shin, Yong Beom" uniqKey="Shin Y" first="Yong Beom" last="Shin">Yong Beom Shin</name>
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<front><div type="abstract" xml:lang="en">The 1.48-μm emission properties and electron population densities of the excited levels were investigated for Ge-As-Ga-S glasses doped with Tm<sup>3+</sup>
 or Tm<sup>3+</sup>
/Tb<sup>3+</sup>
. Electron population inversion between the <sup>3</sup>
H<sub>4</sub>
 and <sup>3</sup>
F<sub>4</sub>
 levels in Tm<sup>3+</sup>
 cannot be achieved without Tb<sup>3+</sup>
 addition due to the strong cross-relaxation in Tm<sup>3+</sup>
. Co-doping of Tb<sup>3+</sup>
 resulted in the large decrease in the population density of the Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
 level via the energy transfer of Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
→Tb<sup>3+</sup>
:<sup>7</sup>
F<sub>0,1,2</sub>
. Calculated population densities of the two levels in Tm<sup>3+</sup>
 using the rate equations showed that the population inversion became possible through the addition of Tb<sup>3+</sup>
. © 2000 American Institute of Physics.</div>
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/Tb<sup>3+</sup>
. Electron population inversion between the <sup>3</sup>
H<sub>4</sub>
 and <sup>3</sup>
F<sub>4</sub>
 levels in Tm<sup>3+</sup>
 cannot be achieved without Tb<sup>3+</sup>
 addition due to the strong cross-relaxation in Tm<sup>3+</sup>
. Co-doping of Tb<sup>3+</sup>
 resulted in the large decrease in the population density of the Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
 level via the energy transfer of Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
→Tb<sup>3+</sup>
:<sup>7</sup>
F<sub>0,1,2</sub>
. Calculated population densities of the two levels in Tm<sup>3+</sup>
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Effect of Tb3+ co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses

Effect of Tb3+ co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses

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Descripteurs français

English descriptors

Abstract

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