ThuliumV1, Pascal, Curation, bibRecord, 000E94

Emission properties of the Er3+ : 4I11/2 → 4I13/2 transition in Er3+-and Er3+/Tm3+-doped Ge-Ga-As-S glasses

Identifieur interne : 000E94 ( Pascal/Curation ); précédent : 000E93; suivant : 000E95

Emission properties of the Er3+ : 4I11/2 → 4I13/2 transition in Er3+-and Er3+/Tm3+-doped Ge-Ga-As-S glasses

Auteurs : YONG GYU CHOI [Corée du Sud] ; KYONG HON KIM [Corée du Sud] ; BYOUNG JOO LEE [Corée du Sud] ; YONG BEOM SHIN [Corée du Sud] ; YOU SONG KIM [Corée du Sud] ; JONG HEO [Corée du Sud]

Source :

Journal of non-crystalline solids [ 0022-3093 ] ; 2000.

RBID : Pascal:01-0052205

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Addition erbium, Matériau dopé, Verre, Addition thulium, Germanium arséniure, Germanium sulfure, Gallium arséniure, Gallium sulfure, Composé quaternaire, Fluorescence, Etat impureté, Spectre absorption, Relaxation croisée, As Ga Ge S, 7855H, 7155J.
Wicri :
- topic : Verre.

English descriptors

KwdEn :
- Absorption spectra, Cross relaxation, Doped materials, Erbium additions, Experimental study, Fluorescence, Gallium arsenides, Gallium sulfides, Germanium arsenides, Germanium sulfides, Glass, Impurity states, Quaternary compounds, Thulium additions.

Abstract

Ge-Ga-As-S glasses were investigated to develop efficient host materials for the Er³⁺ : 2.7 μm fiber lasers. Ge₃₀Ga₁As₉S₆₀ and Ge₃₀Ga₂As₆S₆₂ (all in at.%) glasses show good thermal stability and high rare-earth solubility up to 0.3 mol%. Mid-infrared emission with a peak wavelength of 2.76 μm and bandwidth of ∼ 120 nm was observed in Er³⁺-and Er³⁺/Tm³⁺-doped Ge₃₀Ga₂As₆S₆₂ glasses. Codoping of Tm³ significantly reduced the lifetime of the Er³ ⁴I₁₃ ₂ level due to the energy transfer of Er³⁺: ⁴I_13/2 → Tm³⁺: ³F₄. Thus, the population inversion between the ⁴I_11/2 and ⁴I_13/2 levels in Er³⁺ became possible. In Er³⁺-doped glasses, the rate of cross-relaxation for the ⁴I_11/2 level was approximately 11 times faster than that for the ⁴I₁₃ ₂ level.

A01	`01`	`1`		`@0 0022-3093`
A02	`01`			`@0 JNCSBJ`
A03		`1`		`@0 J. non-cryst. solids`
A05				`@2 278`
A06				`@2 1-3`
A08	`01`	`1`	`ENG`	`@1 Emission properties of the Er³⁺ : ⁴I_11/2 → ⁴I_13/2 transition in Er³⁺-and Er³⁺/Tm³⁺-doped Ge-Ga-As-S glasses`
A11	`01`	`1`		`@1 YONG GYU CHOI`
A11	`02`	`1`		`@1 KYONG HON KIM`
A11	`03`	`1`		`@1 BYOUNG JOO LEE`
A11	`04`	`1`		`@1 YONG BEOM SHIN`
A11	`05`	`1`		`@1 YOU SONG KIM`
A11	`06`	`1`		`@1 JONG HEO`
A14	`01`			`@1 Telecommunication Basic Research laboratory, Electronics and Telecommunications Research Institute, Yusong, P.O. Box 106 @2 Taejon 305-600 @3 KOR @Z 1 aut. @Z 2 aut.`
A14	`02`			`@1 Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu. @2 Pohang, Kyungbuk 790-784 @3 KOR @Z 3 aut. @Z 4 aut. @Z 5 aut. @Z 6 aut.`
A20				`@1 137-144`
A21				`@1 2000`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 14572 @5 354000093752220150`
A44				`@0 0000 @1 © 2001 INIST-CNRS. All rights reserved.`
A45				`@0 32 ref.`
A47	`01`	`1`		`@0 01-0052205`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Journal of non-crystalline solids`
A66	`01`			`@0 NLD`
C01	`01`		`ENG`	@0 Ge-Ga-As-S glasses were investigated to develop efficient host materials for the Er³⁺ : 2.7 μm fiber lasers. Ge₃₀Ga₁As₉S₆₀ and Ge₃₀Ga₂As₆S₆₂ (all in at.%) glasses show good thermal stability and high rare-earth solubility up to 0.3 mol%. Mid-infrared emission with a peak wavelength of 2.76 μm and bandwidth of ∼ 120 nm was observed in Er³⁺-and Er³⁺/Tm³⁺-doped Ge₃₀Ga₂As₆S₆₂ glasses. Codoping of Tm³ significantly reduced the lifetime of the Er³ ⁴I₁₃ ₂ level due to the energy transfer of Er³⁺: ⁴I_13/2 → Tm³⁺: ³F₄. Thus, the population inversion between the ⁴I_11/2 and ⁴I_13/2 levels in Er³⁺ became possible. In Er³⁺-doped glasses, the rate of cross-relaxation for the ⁴I_11/2 level was approximately 11 times faster than that for the ⁴I₁₃ ₂ level.
C02	`01`	`3`		`@0 001B70H55H`
C02	`02`	`3`		`@0 001B70A55J`
C03	`01`	`3`	`FRE`	`@0 Etude expérimentale @5 01`
C03	`01`	`3`	`ENG`	`@0 Experimental study @5 01`
C03	`02`	`3`	`FRE`	`@0 Addition erbium @5 02`
C03	`02`	`3`	`ENG`	`@0 Erbium additions @5 02`
C03	`03`	`3`	`FRE`	`@0 Matériau dopé @5 03`
C03	`03`	`3`	`ENG`	`@0 Doped materials @5 03`
C03	`04`	`3`	`FRE`	`@0 Verre @5 04`
C03	`04`	`3`	`ENG`	`@0 Glass @5 04`
C03	`05`	`3`	`FRE`	`@0 Addition thulium @5 05`
C03	`05`	`3`	`ENG`	`@0 Thulium additions @5 05`
C03	`06`	`3`	`FRE`	`@0 Germanium arséniure @2 NK @5 06`
C03	`06`	`3`	`ENG`	`@0 Germanium arsenides @2 NK @5 06`
C03	`07`	`3`	`FRE`	`@0 Germanium sulfure @2 NK @5 07`
C03	`07`	`3`	`ENG`	`@0 Germanium sulfides @2 NK @5 07`
C03	`08`	`3`	`FRE`	`@0 Gallium arséniure @2 NK @5 08`
C03	`08`	`3`	`ENG`	`@0 Gallium arsenides @2 NK @5 08`
C03	`09`	`3`	`FRE`	`@0 Gallium sulfure @2 NK @5 09`
C03	`09`	`3`	`ENG`	`@0 Gallium sulfides @2 NK @5 09`
C03	`10`	`3`	`FRE`	`@0 Composé quaternaire @5 10`
C03	`10`	`3`	`ENG`	`@0 Quaternary compounds @5 10`
C03	`11`	`3`	`FRE`	`@0 Fluorescence @5 11`
C03	`11`	`3`	`ENG`	`@0 Fluorescence @5 11`
C03	`12`	`3`	`FRE`	`@0 Etat impureté @5 12`
C03	`12`	`3`	`ENG`	`@0 Impurity states @5 12`
C03	`13`	`3`	`FRE`	`@0 Spectre absorption @5 13`
C03	`13`	`3`	`ENG`	`@0 Absorption spectra @5 13`
C03	`14`	`X`	`FRE`	`@0 Relaxation croisée @5 14`
C03	`14`	`X`	`ENG`	`@0 Cross relaxation @5 14`
C03	`14`	`X`	`SPA`	`@0 Relajación cruzada @5 14`
C03	`15`	`3`	`FRE`	`@0 As Ga Ge S @4 INC @5 52`
C03	`16`	`3`	`FRE`	`@0 7855H @2 PAC @4 INC @5 56`
C03	`17`	`3`	`FRE`	`@0 7155J @2 PAC @4 INC @5 57`
C07	`01`	`3`	`FRE`	`@0 Composé minéral @5 48`
C07	`01`	`3`	`ENG`	`@0 Inorganic compounds @5 48`
N21				`@1 029`

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Emission properties of the Er<sup>3+</sup>
 : <sup>4</sup>
I<sub>11/2</sub>
 → <sup>4</sup>
I<sub>13/2</sub>
 transition in Er<sup>3+</sup>
-and Er<sup>3+</sup>
/Tm<sup>3+</sup>
-doped Ge-Ga-As-S glasses</title>
<author><name sortKey="Yong Gyu Choi" sort="Yong Gyu Choi" uniqKey="Yong Gyu Choi" last="Yong Gyu Choi">YONG GYU CHOI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Telecommunication Basic Research laboratory, Electronics and Telecommunications Research Institute, Yusong, P.O. Box 106</s1>
<s2>Taejon 305-600</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="Kyong Hon Kim" sort="Kyong Hon Kim" uniqKey="Kyong Hon Kim" last="Kyong Hon Kim">KYONG HON KIM</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Telecommunication Basic Research laboratory, Electronics and Telecommunications Research Institute, Yusong, P.O. Box 106</s1>
<s2>Taejon 305-600</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="Byoung Joo Lee" sort="Byoung Joo Lee" uniqKey="Byoung Joo Lee" last="Byoung Joo Lee">BYOUNG JOO LEE</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="Yong Beom Shin" sort="Yong Beom Shin" uniqKey="Yong Beom Shin" last="Yong Beom Shin">YONG BEOM SHIN</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="You Song Kim" sort="You Song Kim" uniqKey="You Song Kim" last="You Song Kim">YOU SONG KIM</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="Jong Heo" sort="Jong Heo" uniqKey="Jong Heo" last="Jong Heo">JONG HEO</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">INIST</idno>
<idno type="inist">01-0052205</idno>
<date when="2000">2000</date>
<idno type="stanalyst">PASCAL 01-0052205 INIST</idno>
<idno type="RBID">Pascal:01-0052205</idno>
<idno type="wicri:Area/Pascal/Corpus">000E94</idno>
<idno type="wicri:Area/Pascal/Curation">000E94</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Emission properties of the Er<sup>3+</sup>
 : <sup>4</sup>
I<sub>11/2</sub>
 → <sup>4</sup>
I<sub>13/2</sub>
 transition in Er<sup>3+</sup>
-and Er<sup>3+</sup>
/Tm<sup>3+</sup>
-doped Ge-Ga-As-S glasses</title>
<author><name sortKey="Yong Gyu Choi" sort="Yong Gyu Choi" uniqKey="Yong Gyu Choi" last="Yong Gyu Choi">YONG GYU CHOI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Telecommunication Basic Research laboratory, Electronics and Telecommunications Research Institute, Yusong, P.O. Box 106</s1>
<s2>Taejon 305-600</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="Kyong Hon Kim" sort="Kyong Hon Kim" uniqKey="Kyong Hon Kim" last="Kyong Hon Kim">KYONG HON KIM</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Telecommunication Basic Research laboratory, Electronics and Telecommunications Research Institute, Yusong, P.O. Box 106</s1>
<s2>Taejon 305-600</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="Byoung Joo Lee" sort="Byoung Joo Lee" uniqKey="Byoung Joo Lee" last="Byoung Joo Lee">BYOUNG JOO LEE</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="Yong Beom Shin" sort="Yong Beom Shin" uniqKey="Yong Beom Shin" last="Yong Beom Shin">YONG BEOM SHIN</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="You Song Kim" sort="You Song Kim" uniqKey="You Song Kim" last="You Song Kim">YOU SONG KIM</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
<author><name sortKey="Jong Heo" sort="Jong Heo" uniqKey="Jong Heo" last="Jong Heo">JONG HEO</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Journal of non-crystalline solids</title>
<title level="j" type="abbreviated">J. non-cryst. solids</title>
<idno type="ISSN">0022-3093</idno>
<imprint><date when="2000">2000</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Journal of non-crystalline solids</title>
<title level="j" type="abbreviated">J. non-cryst. solids</title>
<idno type="ISSN">0022-3093</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Cross relaxation</term>
<term>Doped materials</term>
<term>Erbium additions</term>
<term>Experimental study</term>
<term>Fluorescence</term>
<term>Gallium arsenides</term>
<term>Gallium sulfides</term>
<term>Germanium arsenides</term>
<term>Germanium sulfides</term>
<term>Glass</term>
<term>Impurity states</term>
<term>Quaternary compounds</term>
<term>Thulium additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Addition erbium</term>
<term>Matériau dopé</term>
<term>Verre</term>
<term>Addition thulium</term>
<term>Germanium arséniure</term>
<term>Germanium sulfure</term>
<term>Gallium arséniure</term>
<term>Gallium sulfure</term>
<term>Composé quaternaire</term>
<term>Fluorescence</term>
<term>Etat impureté</term>
<term>Spectre absorption</term>
<term>Relaxation croisée</term>
<term>As Ga Ge S</term>
<term>7855H</term>
<term>7155J</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Verre</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Ge-Ga-As-S glasses were investigated to develop efficient host materials for the Er<sup>3+</sup>
 : 2.7 μm fiber lasers. Ge<sub>30</sub>
Ga<sub>1</sub>
As<sub>9</sub>
S<sub>60</sub>
 and Ge<sub>30</sub>
Ga<sub>2</sub>
As<sub>6</sub>
S<sub>62</sub>
 (all in at.%) glasses show good thermal stability and high rare-earth solubility up to 0.3 mol%. Mid-infrared emission with a peak wavelength of 2.76 μm and bandwidth of ∼ 120 nm was observed in Er<sup>3+</sup>
-and Er<sup>3+</sup>
/Tm<sup>3+</sup>
-doped Ge<sub>30</sub>
Ga<sub>2</sub>
As<sub>6</sub>
S<sub>62</sub>
 glasses. Codoping of Tm<sup>3</sup>
 significantly reduced the lifetime of the Er<sup>3</sup>
 <sup>4</sup>
I<sub>13</sub>
 <sub>2</sub>
 level due to the energy transfer of Er<sup>3+</sup>
: <sup>4</sup>
I<sub>13/2</sub>
 → Tm<sup>3+</sup>
: <sup>3</sup>
F<sub>4</sub>
. Thus, the population inversion between the <sup>4</sup>
I<sub>11/2</sub>
 and <sup>4</sup>
I<sub>13/2</sub>
 levels in Er<sup>3+</sup>
 became possible. In Er<sup>3+</sup>
-doped glasses, the rate of cross-relaxation for the <sup>4</sup>
I<sub>11/2</sub>
 level was approximately 11 times faster than that for the <sup>4</sup>
I<sub>13</sub>
 <sub>2</sub>
 level.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3093</s0>
</fA01>
<fA02 i1="01"><s0>JNCSBJ</s0>
</fA02>
<fA03 i2="1"><s0>J. non-cryst. solids</s0>
</fA03>
<fA05><s2>278</s2>
</fA05>
<fA06><s2>1-3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Emission properties of the Er<sup>3+</sup>
 : <sup>4</sup>
I<sub>11/2</sub>
 → <sup>4</sup>
I<sub>13/2</sub>
 transition in Er<sup>3+</sup>
-and Er<sup>3+</sup>
/Tm<sup>3+</sup>
-doped Ge-Ga-As-S glasses</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>YONG GYU CHOI</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KYONG HON KIM</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BYOUNG JOO LEE</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>YONG BEOM SHIN</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>YOU SONG KIM</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>JONG HEO</s1>
</fA11>
<fA14 i1="01"><s1>Telecommunication Basic Research laboratory, Electronics and Telecommunications Research Institute, Yusong, P.O. Box 106</s1>
<s2>Taejon 305-600</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Phatonic Glasses Laboratory, Department of Materials Science and Engineering. Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu.</s1>
<s2>Pohang, Kyungbuk 790-784</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>137-144</s1>
</fA20>
<fA21><s1>2000</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>14572</s2>
<s5>354000093752220150</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2001 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>32 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>01-0052205</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of non-crystalline solids</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Ge-Ga-As-S glasses were investigated to develop efficient host materials for the Er<sup>3+</sup>
 : 2.7 μm fiber lasers. Ge<sub>30</sub>
Ga<sub>1</sub>
As<sub>9</sub>
S<sub>60</sub>
 and Ge<sub>30</sub>
Ga<sub>2</sub>
As<sub>6</sub>
S<sub>62</sub>
 (all in at.%) glasses show good thermal stability and high rare-earth solubility up to 0.3 mol%. Mid-infrared emission with a peak wavelength of 2.76 μm and bandwidth of ∼ 120 nm was observed in Er<sup>3+</sup>
-and Er<sup>3+</sup>
/Tm<sup>3+</sup>
-doped Ge<sub>30</sub>
Ga<sub>2</sub>
As<sub>6</sub>
S<sub>62</sub>
 glasses. Codoping of Tm<sup>3</sup>
 significantly reduced the lifetime of the Er<sup>3</sup>
 <sup>4</sup>
I<sub>13</sub>
 <sub>2</sub>
 level due to the energy transfer of Er<sup>3+</sup>
: <sup>4</sup>
I<sub>13/2</sub>
 → Tm<sup>3+</sup>
: <sup>3</sup>
F<sub>4</sub>
. Thus, the population inversion between the <sup>4</sup>
I<sub>11/2</sub>
 and <sup>4</sup>
I<sub>13/2</sub>
 levels in Er<sup>3+</sup>
 became possible. In Er<sup>3+</sup>
-doped glasses, the rate of cross-relaxation for the <sup>4</sup>
I<sub>11/2</sub>
 level was approximately 11 times faster than that for the <sup>4</sup>
I<sub>13</sub>
 <sub>2</sub>
 level.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H55H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70A55J</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Addition erbium</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Erbium additions</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Verre</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Glass</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Germanium arséniure</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Germanium arsenides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Germanium sulfure</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Germanium sulfides</s0>
<s2>NK</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Gallium sulfure</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium sulfides</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Fluorescence</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Fluorescence</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Etat impureté</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Impurity states</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Spectre absorption</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Absorption spectra</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Relaxation croisée</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Cross relaxation</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Relajación cruzada</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>As Ga Ge S</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>7855H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>7155J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>48</s5>
</fC07>
<fN21><s1>029</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Emission properties of the Er3+ : 4I11/2 → 4I13/2 transition in Er3+-and Er3+/Tm3+-doped Ge-Ga-As-S glasses

Emission properties of the Er3+ : 4I11/2 → 4I13/2 transition in Er3+-and Er3+/Tm3+-doped Ge-Ga-As-S glasses

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