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Quantitative identification of phonon modes controlling the multiphonon relaxation in heavy-metal oxide glasses

Identifieur interne : 000990 ( Pascal/Corpus ); précédent : 000989; suivant : 000991

Quantitative identification of phonon modes controlling the multiphonon relaxation in heavy-metal oxide glasses

Auteurs : YONG SEOP HAN ; JAY HYOK SONG ; Jong Heo

Source :

RBID : Pascal:05-0058784

Descripteurs français

English descriptors

Abstract

The phonon mode(s) controlling the multiphonon relaxation (MPR) in PbO-Bi2O3-Ga2O3 glass was analyzed, and the effect of GeO2 addition on the MPR process was investigated. MPR rates were obtained from the lifetimes of the Tm3+:3H4 level in glasses over the temperature range 20-280 K. In PbO-Bi2O3-Ga2O3 glass, phonons from the bending vibration between GaO4 tetrahedra (∼550 cm-') controlled the MPR process. On the addition of GeO2, the phonon mode at ∼770 cm-1 due to the stretching vibration of GeO4 tetrahedra started to affect the MPR process. Phonon modes controlling the MPR process in PbO-Bi2O3-Ga2O3-GeO2 glass were both 550 cm-1 and 770 cm-1.

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Pour connaître la documentation sur le format Inist Standard.

pA  
A01 01  1    @0 0002-7820
A02 01      @0 JACTAW
A03   1    @0 J. Am. Ceram. Soc.
A05       @2 87
A06       @2 7
A08 01  1  ENG  @1 Quantitative identification of phonon modes controlling the multiphonon relaxation in heavy-metal oxide glasses
A11 01  1    @1 YONG SEOP HAN
A11 02  1    @1 JAY HYOK SONG
A11 03  1    @1 HEO (Jong)
A14 01      @1 Center for Information Materials and Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu @2 Pohang, Gyeongbuk 790-784 @3 KOR @Z 1 aut. @Z 2 aut. @Z 3 aut.
A20       @1 1381-1383
A21       @1 2004
A23 01      @0 ENG
A43 01      @1 INIST @2 101 @5 354000113826950380
A44       @0 0000 @1 © 2005 INIST-CNRS. All rights reserved.
A45       @0 12 ref.
A47 01  1    @0 05-0058784
A60       @1 P
A61       @0 A
A64 01  1    @0 Journal of the American Ceramic Society
A66 01      @0 USA
C01 01    ENG  @0 The phonon mode(s) controlling the multiphonon relaxation (MPR) in PbO-Bi2O3-Ga2O3 glass was analyzed, and the effect of GeO2 addition on the MPR process was investigated. MPR rates were obtained from the lifetimes of the Tm3+:3H4 level in glasses over the temperature range 20-280 K. In PbO-Bi2O3-Ga2O3 glass, phonons from the bending vibration between GaO4 tetrahedra (∼550 cm-') controlled the MPR process. On the addition of GeO2, the phonon mode at ∼770 cm-1 due to the stretching vibration of GeO4 tetrahedra started to affect the MPR process. Phonon modes controlling the MPR process in PbO-Bi2O3-Ga2O3-GeO2 glass were both 550 cm-1 and 770 cm-1.
C02 01  3    @0 001B70H30L
C03 01  3  FRE  @0 Etude expérimentale @5 01
C03 01  3  ENG  @0 Experimental study @5 01
C03 02  3  FRE  @0 Verre @5 02
C03 02  3  ENG  @0 Glass @5 02
C03 03  3  FRE  @0 Système ternaire @5 04
C03 03  3  ENG  @0 Ternary systems @5 04
C03 04  3  FRE  @0 Plomb Oxyde @2 NC @5 05
C03 04  3  ENG  @0 Lead Oxides @2 NC @5 05
C03 05  3  FRE  @0 Bismuth Oxyde @2 NC @5 06
C03 05  3  ENG  @0 Bismuth Oxides @2 NC @5 06
C03 06  3  FRE  @0 Gallium oxyde @2 NK @5 07
C03 06  3  ENG  @0 Gallium oxides @2 NK @5 07
C03 07  3  FRE  @0 Propriété optique @5 08
C03 07  3  ENG  @0 Optical properties @5 08
C03 08  X  FRE  @0 Mode phonon @5 09
C03 08  X  ENG  @0 Phonon mode @5 09
C03 08  X  SPA  @0 Modo fonón @5 09
C03 09  3  FRE  @0 Processus n phonons @5 10
C03 09  3  ENG  @0 Multi-phonon processes @5 10
C03 10  X  FRE  @0 Relaxation phonon @5 11
C03 10  X  ENG  @0 Phonon relaxation @5 11
C03 10  X  SPA  @0 Relajación fonón @5 11
C03 11  3  FRE  @0 Spectre Raman @5 12
C03 11  3  ENG  @0 Raman spectra @5 12
C03 12  X  FRE  @0 Dopage @5 13
C03 12  X  ENG  @0 Doping @5 13
C03 12  X  SPA  @0 Doping @5 13
C03 13  3  FRE  @0 Addition thulium @5 14
C03 13  3  ENG  @0 Thulium additions @5 14
C03 14  3  FRE  @0 Système Bi2O3 Ga2O3 PbO @4 INC @5 32
C03 15  3  FRE  @0 Bi Ga O Pb @4 INC @5 33
C03 16  3  FRE  @0 7830L @2 PAC @4 INC @5 92
C07 01  3  FRE  @0 Oxyde @5 03
C07 01  3  ENG  @0 Oxides @5 03
N21       @1 031
N44 01      @1 PSI
N82       @1 PSI

Format Inist (serveur)

NO : PASCAL 05-0058784 INIST
ET : Quantitative identification of phonon modes controlling the multiphonon relaxation in heavy-metal oxide glasses
AU : YONG SEOP HAN; JAY HYOK SONG; HEO (Jong)
AF : Center for Information Materials and Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu/Pohang, Gyeongbuk 790-784/Corée, République de (1 aut., 2 aut., 3 aut.)
DT : Publication en série; Niveau analytique
SO : Journal of the American Ceramic Society; ISSN 0002-7820; Coden JACTAW; Etats-Unis; Da. 2004; Vol. 87; No. 7; Pp. 1381-1383; Bibl. 12 ref.
LA : Anglais
EA : The phonon mode(s) controlling the multiphonon relaxation (MPR) in PbO-Bi2O3-Ga2O3 glass was analyzed, and the effect of GeO2 addition on the MPR process was investigated. MPR rates were obtained from the lifetimes of the Tm3+:3H4 level in glasses over the temperature range 20-280 K. In PbO-Bi2O3-Ga2 O3 glass, phonons from the bending vibration between GaO4 tetrahedra (∼550 cm-') controlled the MPR process. On the addition of GeO2, the phonon mode at ∼770 cm-1 due to the stretching vibration of GeO4 tetrahedra started to affect the MPR process. Phonon modes controlling the MPR process in PbO-Bi2O3-Ga2O 3-GeO2 glass were both 550 cm-1 and 770 cm-1.
CC : 001B70H30L
FD : Etude expérimentale; Verre; Système ternaire; Plomb Oxyde; Bismuth Oxyde; Gallium oxyde; Propriété optique; Mode phonon; Processus n phonons; Relaxation phonon; Spectre Raman; Dopage; Addition thulium; Système Bi2O3 Ga2O3 PbO; Bi Ga O Pb; 7830L
FG : Oxyde
ED : Experimental study; Glass; Ternary systems; Lead Oxides; Bismuth Oxides; Gallium oxides; Optical properties; Phonon mode; Multi-phonon processes; Phonon relaxation; Raman spectra; Doping; Thulium additions
EG : Oxides
SD : Modo fonón; Relajación fonón; Doping
LO : INIST-101.354000113826950380
ID : 05-0058784

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Pascal:05-0058784

Le document en format XML

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<term>Lead Oxides</term>
<term>Multi-phonon processes</term>
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<div type="abstract" xml:lang="en">The phonon mode(s) controlling the multiphonon relaxation (MPR) in PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2</sub>
O
<sub>3</sub>
glass was analyzed, and the effect of GeO
<sub>2</sub>
addition on the MPR process was investigated. MPR rates were obtained from the lifetimes of the Tm
<sup>3+</sup>
:
<sup>3</sup>
H
<sub>4</sub>
level in glasses over the temperature range 20-280 K. In PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2</sub>
O
<sub>3</sub>
glass, phonons from the bending vibration between GaO
<sub>4</sub>
tetrahedra (∼550 cm-') controlled the MPR process. On the addition of GeO
<sub>2</sub>
, the phonon mode at ∼770 cm
<sup>-1</sup>
due to the stretching vibration of GeO
<sub>4</sub>
tetrahedra started to affect the MPR process. Phonon modes controlling the MPR process in PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2</sub>
O
<sub>3</sub>
-GeO
<sub>2</sub>
glass were both 550 cm
<sup>-1</sup>
and 770 cm
<sup>-1</sup>
.</div>
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<s0>The phonon mode(s) controlling the multiphonon relaxation (MPR) in PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2</sub>
O
<sub>3</sub>
glass was analyzed, and the effect of GeO
<sub>2</sub>
addition on the MPR process was investigated. MPR rates were obtained from the lifetimes of the Tm
<sup>3+</sup>
:
<sup>3</sup>
H
<sub>4</sub>
level in glasses over the temperature range 20-280 K. In PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2</sub>
O
<sub>3</sub>
glass, phonons from the bending vibration between GaO
<sub>4</sub>
tetrahedra (∼550 cm-') controlled the MPR process. On the addition of GeO
<sub>2</sub>
, the phonon mode at ∼770 cm
<sup>-1</sup>
due to the stretching vibration of GeO
<sub>4</sub>
tetrahedra started to affect the MPR process. Phonon modes controlling the MPR process in PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2</sub>
O
<sub>3</sub>
-GeO
<sub>2</sub>
glass were both 550 cm
<sup>-1</sup>
and 770 cm
<sup>-1</sup>
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<s5>32</s5>
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<s0>Bi Ga O Pb</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE">
<s0>7830L</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE">
<s0>Oxyde</s0>
<s5>03</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG">
<s0>Oxides</s0>
<s5>03</s5>
</fC07>
<fN21>
<s1>031</s1>
</fN21>
<fN44 i1="01">
<s1>PSI</s1>
</fN44>
<fN82>
<s1>PSI</s1>
</fN82>
</pA>
</standard>
<server>
<NO>PASCAL 05-0058784 INIST</NO>
<ET>Quantitative identification of phonon modes controlling the multiphonon relaxation in heavy-metal oxide glasses</ET>
<AU>YONG SEOP HAN; JAY HYOK SONG; HEO (Jong)</AU>
<AF>Center for Information Materials and Department of Materials Science and Engineering, Pohang University of Science and Technology, San 31, Hyoja-dong, Nam-gu/Pohang, Gyeongbuk 790-784/Corée, République de (1 aut., 2 aut., 3 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Journal of the American Ceramic Society; ISSN 0002-7820; Coden JACTAW; Etats-Unis; Da. 2004; Vol. 87; No. 7; Pp. 1381-1383; Bibl. 12 ref.</SO>
<LA>Anglais</LA>
<EA>The phonon mode(s) controlling the multiphonon relaxation (MPR) in PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2</sub>
O
<sub>3</sub>
glass was analyzed, and the effect of GeO
<sub>2</sub>
addition on the MPR process was investigated. MPR rates were obtained from the lifetimes of the Tm
<sup>3+</sup>
:
<sup>3</sup>
H
<sub>4</sub>
level in glasses over the temperature range 20-280 K. In PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2 </sub>
O
<sub>3</sub>
glass, phonons from the bending vibration between GaO
<sub>4</sub>
tetrahedra (∼550 cm-') controlled the MPR process. On the addition of GeO
<sub>2</sub>
, the phonon mode at ∼770 cm
<sup>-1</sup>
due to the stretching vibration of GeO
<sub>4</sub>
tetrahedra started to affect the MPR process. Phonon modes controlling the MPR process in PbO-Bi
<sub>2</sub>
O
<sub>3</sub>
-Ga
<sub>2</sub>
O
<sub> 3</sub>
-GeO
<sub>2</sub>
glass were both 550 cm
<sup>-1</sup>
and 770 cm
<sup>-1</sup>
.</EA>
<CC>001B70H30L</CC>
<FD>Etude expérimentale; Verre; Système ternaire; Plomb Oxyde; Bismuth Oxyde; Gallium oxyde; Propriété optique; Mode phonon; Processus n phonons; Relaxation phonon; Spectre Raman; Dopage; Addition thulium; Système Bi2O3 Ga2O3 PbO; Bi Ga O Pb; 7830L</FD>
<FG>Oxyde</FG>
<ED>Experimental study; Glass; Ternary systems; Lead Oxides; Bismuth Oxides; Gallium oxides; Optical properties; Phonon mode; Multi-phonon processes; Phonon relaxation; Raman spectra; Doping; Thulium additions</ED>
<EG>Oxides</EG>
<SD>Modo fonón; Relajación fonón; Doping</SD>
<LO>INIST-101.354000113826950380</LO>
<ID>05-0058784</ID>
</server>
</inist>
</record>

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