ThuliumV1, Pascal, Corpus, bibRecord, 000788

Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films

Identifieur interne : 000788 ( Pascal/Corpus ); précédent : 000787; suivant : 000789

Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films

Auteurs : M. Dongol ; M. M. El-Nahass ; M. Abou-Zied ; A. El-Denglawey

Source :

EPJ. Applied physics : (Print) [ 1286-0042 ] ; 2007.

RBID : Pascal:07-0180020

Descripteurs français

Pascal (Inist)
- Semiconducteur amorphe, Matériau dopé, Propriété thermoélectrique, Semiconducteur, Composé ternaire, Verre chalcogénure, Effet concentration, Arsenic séléniure, Addition thulium, 6143D, 7215J, 7120G, As20Se(80-x)Tl(x), As Se Tl.

English descriptors

KwdEn :
- Amorphous semiconductors, Arsenic selenides, Chalcogenide glasses, Doped materials, Quantity ratio, Semiconductor materials, Ternary compounds, Thermoelectric properties, Thulium additions.

Abstract

Thermal evaporation technique was used to prepare As₂₀Se_80-xTl_x films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As₂₀Se_80-xTl_x films. TEP activation energy, ΔE_s could be calculated from TEP measurements. It was found that ΔE_s decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔE_Q could be calculated.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 1286-0042`
A03		`1`		`@0 EPJ, Appl. phys. : (Print)`
A05				`@2 37`
A06				`@2 3`
A08	`01`	`1`	`ENG`	`@1 Thermoelectric properties and mobility activation energy of amorphous As₂₀Se_80- _xTl_x films`
A11	`01`	`1`		`@1 DONGOL (M.)`
A11	`02`	`1`		`@1 EL-NAHASS (M. M.)`
A11	`03`	`1`		`@1 ABOU-ZIED (M.)`
A11	`04`	`1`		`@1 EL-DENGLAWEY (A.)`
A14	`01`			`@1 Physics Department Faculty of Sciences South Valley University, 6 Kilo Road @2 83523, Qena @3 EGY @Z 1 aut. @Z 3 aut. @Z 4 aut.`
A14	`02`			`@1 Physics Department Faculty of Education Ain Shams University @2 Cairo @3 EGY @Z 2 aut.`
A20				`@1 257-260`
A21				`@1 2007`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 26690 @5 354000147193310050`
A44				`@0 0000 @1 © 2007 INIST-CNRS. All rights reserved.`
A45				`@0 37 ref.`
A47	`01`	`1`		`@0 07-0180020`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 EPJ. Applied physics : (Print)`
A66	`01`			`@0 FRA`
C01	`01`		`ENG`	@0 Thermal evaporation technique was used to prepare As₂₀Se_80-xTl_x films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As₂₀Se_80-xTl_x films. TEP activation energy, ΔE_s could be calculated from TEP measurements. It was found that ΔE_s decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔE_Q could be calculated.
C02	`01`	`3`		`@0 001B60A43D`
C02	`02`	`3`		`@0 001B70B15J`
C02	`03`	`3`		`@0 001B70A20G`
C03	`01`	`3`	`FRE`	`@0 Semiconducteur amorphe @5 47`
C03	`01`	`3`	`ENG`	`@0 Amorphous semiconductors @5 47`
C03	`02`	`3`	`FRE`	`@0 Matériau dopé @5 50`
C03	`02`	`3`	`ENG`	`@0 Doped materials @5 50`
C03	`03`	`3`	`FRE`	`@0 Propriété thermoélectrique @5 61`
C03	`03`	`3`	`ENG`	`@0 Thermoelectric properties @5 61`
C03	`04`	`3`	`FRE`	`@0 Semiconducteur @5 62`
C03	`04`	`3`	`ENG`	`@0 Semiconductor materials @5 62`
C03	`05`	`3`	`FRE`	`@0 Composé ternaire @5 63`
C03	`05`	`3`	`ENG`	`@0 Ternary compounds @5 63`
C03	`06`	`3`	`FRE`	`@0 Verre chalcogénure @5 64`
C03	`06`	`3`	`ENG`	`@0 Chalcogenide glasses @5 64`
C03	`07`	`3`	`FRE`	`@0 Effet concentration @5 65`
C03	`07`	`3`	`ENG`	`@0 Quantity ratio @5 65`
C03	`08`	`3`	`FRE`	`@0 Arsenic séléniure @2 NK @5 66`
C03	`08`	`3`	`ENG`	`@0 Arsenic selenides @2 NK @5 66`
C03	`09`	`3`	`FRE`	`@0 Addition thulium @5 67`
C03	`09`	`3`	`ENG`	`@0 Thulium additions @5 67`
C03	`10`	`3`	`FRE`	`@0 6143D @4 INC @5 83`
C03	`11`	`3`	`FRE`	`@0 7215J @4 INC @5 84`
C03	`12`	`3`	`FRE`	`@0 7120G @4 INC @5 85`
C03	`13`	`3`	`FRE`	`@0 As20Se(80-x)Tl(x) @4 INC @5 86`
C03	`14`	`3`	`FRE`	`@0 As Se Tl @4 INC @5 87`
N21				`@1 122`

Format Inist (serveur)

NO :	PASCAL 07-0180020 INIST
ET :	Thermoelectric properties and mobility activation energy of amorphous As₂₀Se_80- _xTl_x films
AU :	DONGOL (M.); EL-NAHASS (M. M.); ABOU-ZIED (M.); EL-DENGLAWEY (A.)
AF :	Physics Department Faculty of Sciences South Valley University, 6 Kilo Road/83523, Qena/Egypte (1 aut., 3 aut., 4 aut.); Physics Department Faculty of Education Ain Shams University/Cairo/Egypte (2 aut.)
DT :	Publication en série; Niveau analytique
SO :	EPJ. Applied physics : (Print); ISSN 1286-0042; France; Da. 2007; Vol. 37; No. 3; Pp. 257-260; Bibl. 37 ref.
LA :	Anglais
EA :	Thermal evaporation technique was used to prepare As₂₀Se_80-xTl_x films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As₂₀Se_80-xTl_x films. TEP activation energy, ΔE_s could be calculated from TEP measurements. It was found that ΔE_s decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔE_Q could be calculated.
CC :	001B60A43D; 001B70B15J; 001B70A20G
FD :	Semiconducteur amorphe; Matériau dopé; Propriété thermoélectrique; Semiconducteur; Composé ternaire; Verre chalcogénure; Effet concentration; Arsenic séléniure; Addition thulium; 6143D; 7215J; 7120G; As20Se(80-x)Tl(x); As Se Tl
ED :	Amorphous semiconductors; Doped materials; Thermoelectric properties; Semiconductor materials; Ternary compounds; Chalcogenide glasses; Quantity ratio; Arsenic selenides; Thulium additions
LO :	INIST-26690.354000147193310050
ID :	07-0180020

Links to Exploration step

Pascal:07-0180020

Le document en format XML

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<term>Composé ternaire</term>
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<term>Arsenic séléniure</term>
<term>Addition thulium</term>
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<front><div type="abstract" xml:lang="en">Thermal evaporation technique was used to prepare As<sub>20</sub>
Se<sub>80-x</sub>
Tl<sub>x</sub>
 films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As<sub>20</sub>
Se<sub>80-x</sub>
Tl<sub>x</sub>
 films. TEP activation energy, ΔE<sub>s</sub>
 could be calculated from TEP measurements. It was found that ΔE<sub>s</sub>
 decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔE<sub>Q</sub>
 could be calculated.</div>
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 <sub>x</sub>
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<sZ>3 aut.</sZ>
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Se<sub>80-x</sub>
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 films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As<sub>20</sub>
Se<sub>80-x</sub>
Tl<sub>x</sub>
 films. TEP activation energy, ΔE<sub>s</sub>
 could be calculated from TEP measurements. It was found that ΔE<sub>s</sub>
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<server><NO>PASCAL 07-0180020 INIST</NO>
<ET>Thermoelectric properties and mobility activation energy of amorphous As<sub>20</sub>
Se<sub>80-</sub>
 <sub>x</sub>
Tl<sub>x</sub>
 films</ET>
<AU>DONGOL (M.); EL-NAHASS (M. M.); ABOU-ZIED (M.); EL-DENGLAWEY (A.)</AU>
<AF>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road/83523, Qena/Egypte (1 aut., 3 aut., 4 aut.); Physics Department Faculty of Education Ain Shams University/Cairo/Egypte (2 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>EPJ. Applied physics : (Print); ISSN 1286-0042; France; Da. 2007; Vol. 37; No. 3; Pp. 257-260; Bibl. 37 ref.</SO>
<LA>Anglais</LA>
<EA>Thermal evaporation technique was used to prepare As<sub>20</sub>
Se<sub>80-x</sub>
Tl<sub>x</sub>
 films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As<sub>20</sub>
Se<sub>80-x</sub>
Tl<sub>x</sub>
 films. TEP activation energy, ΔE<sub>s</sub>
 could be calculated from TEP measurements. It was found that ΔE<sub>s</sub>
 decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔE<sub>Q</sub>
 could be calculated.</EA>
<CC>001B60A43D; 001B70B15J; 001B70A20G</CC>
<FD>Semiconducteur amorphe; Matériau dopé; Propriété thermoélectrique; Semiconducteur; Composé ternaire; Verre chalcogénure; Effet concentration; Arsenic séléniure; Addition thulium; 6143D; 7215J; 7120G; As20Se(80-x)Tl(x); As Se Tl</FD>
<ED>Amorphous semiconductors; Doped materials; Thermoelectric properties; Semiconductor materials; Ternary compounds; Chalcogenide glasses; Quantity ratio; Arsenic selenides; Thulium additions</ED>
<LO>INIST-26690.354000147193310050</LO>
<ID>07-0180020</ID>
</server>
</inist>
</record>

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Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films

Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films

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