Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics
Identifieur interne : 000236 ( Pascal/Corpus ); précédent : 000235; suivant : 000237Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics
Auteurs : SHIXUN DAI ; CHANGGUI LIN ; FEIFEI CHEN ; XIANGHUA ZHANG ; CHAO LIU ; KAI XU ; Jong Heo ; XIANG SHEN ; XUNSI WANGSource :
- Journal of non-crystalline solids [ 0022-3093 ] ; 2011.
Descripteurs français
- Pascal (Inist)
- Photoluminescence, Dopage, Addition thulium, Diffraction RX, Microscopie électronique balayage, Transition niveau énergie, Traitement thermique, Grosseur grain, Transition optique, Rayonnement IR moyen, Sulfure de gallium, Nanocristal, Vitrocéramique, Sulfure de germanium, Système ternaire, Iodure de césium, Verre de chalcohalogénure, Verre chacohalogénure.
English descriptors
- KwdEn :
Abstract
Chalcohalide glass with a composition of 65GeS2-25Ga2S3-10CsI (in mol%) doped with 0.6 wt% Tm3+ ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature Tg for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga2S3 crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of 3H4→3H5 and 3H5→3F4 of Tm3+ ions were significantly enhanced by the presence of Ga2S3 nanocrystals and reached a maximum after 8 hours treatment.
Notice en format standard (ISO 2709)
Pour connaître la documentation sur le format Inist Standard.
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Format Inist (serveur)
NO : | PASCAL 11-0327149 INIST |
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ET : | Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics |
AU : | SHIXUN DAI; CHANGGUI LIN; FEIFEI CHEN; XIANGHUA ZHANG; CHAO LIU; KAI XU; HEO (Jong); XIANG SHEN; XUNSI WANG; ZHANG (Long); QIU (Jianrong) |
AF : | Faculty of Information Science and Engineering, Ningbo University/Ningbo 315211/Chine (1 aut., 2 aut., 3 aut., 8 aut., 9 aut.); Laboratoire des verres et Céramiques, Université de Rennes 1/Rennes 35042/France (4 aut.); Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology/Pohang, Gyeongbuk 790-784/Corée, République de (5 aut., 6 aut., 7 aut.); Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, P.O. Box 800-211/Shangai 201800/Chine (1 aut.); Zhejiang University/Chine (2 aut.) |
DT : | Publication en série; Congrès; Niveau analytique |
SO : | Journal of non-crystalline solids; ISSN 0022-3093; Coden JNCSBJ; Royaume-Uni; Da. 2011; Vol. 357; No. 11-13; Pp. 2302-2305; Bibl. 20 ref. |
LA : | Anglais |
EA : | Chalcohalide glass with a composition of 65GeS2-25Ga2S3-10CsI (in mol%) doped with 0.6 wt% Tm3+ ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature Tg for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga2S3 crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of 3H4→3H5 and 3H5→3F4 of Tm3+ ions were significantly enhanced by the presence of Ga2S3 nanocrystals and reached a maximum after 8 hours treatment. |
CC : | 001B70H55Q |
FD : | Photoluminescence; Dopage; Addition thulium; Diffraction RX; Microscopie électronique balayage; Transition niveau énergie; Traitement thermique; Grosseur grain; Transition optique; Rayonnement IR moyen; Sulfure de gallium; Nanocristal; Vitrocéramique; Sulfure de germanium; Système ternaire; Iodure de césium; Verre de chalcohalogénure; Verre chacohalogénure |
ED : | Photoluminescence; Doping; Thulium additions; XRD; Scanning electron microscopy; Energy-level transitions; Heat treatments; Grain size; Optical transition; Mid infrared radiation; Gallium sulfide; Nanocrystal; Glass ceramics; Germanium sulfides; Ternary systems; Cesium iodide; Chalcohalide glasses; Chalcohalide glasses |
SD : | Doping; Transición óptica; Radiación infrarroja media; Galio sulfuro; Nanocristal; Cesio ioduro |
LO : | INIST-14572.354000192186020220 |
ID : | 11-0327149 |
Links to Exploration step
Pascal:11-0327149Le document en format XML
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Enhanced mid-IR luminescence of Tm<sup>3+</sup>
ions in Ga<sub>2</sub>
S<sub>3</sub>
nanocrystals embedded chalcohalide glass ceramics</title>
<author><name sortKey="Shixun Dai" sort="Shixun Dai" uniqKey="Shixun Dai" last="Shixun Dai">SHIXUN DAI</name>
<affiliation><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1>
<s2>Ningbo 315211</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Changgui Lin" sort="Changgui Lin" uniqKey="Changgui Lin" last="Changgui Lin">CHANGGUI LIN</name>
<affiliation><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1>
<s2>Ningbo 315211</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Feifei Chen" sort="Feifei Chen" uniqKey="Feifei Chen" last="Feifei Chen">FEIFEI CHEN</name>
<affiliation><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1>
<s2>Ningbo 315211</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Xianghua Zhang" sort="Xianghua Zhang" uniqKey="Xianghua Zhang" last="Xianghua Zhang">XIANGHUA ZHANG</name>
<affiliation><inist:fA14 i1="02"><s1>Laboratoire des verres et Céramiques, Université de Rennes 1</s1>
<s2>Rennes 35042</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Chao Liu" sort="Chao Liu" uniqKey="Chao Liu" last="Chao Liu">CHAO LIU</name>
<affiliation><inist:fA14 i1="03"><s1>Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology</s1>
<s2>Pohang, Gyeongbuk 790-784</s2>
<s3>KOR</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Kai Xu" sort="Kai Xu" uniqKey="Kai Xu" last="Kai Xu">KAI XU</name>
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<s2>Pohang, Gyeongbuk 790-784</s2>
<s3>KOR</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Heo, Jong" sort="Heo, Jong" uniqKey="Heo J" first="Jong" last="Heo">Jong Heo</name>
<affiliation><inist:fA14 i1="03"><s1>Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology</s1>
<s2>Pohang, Gyeongbuk 790-784</s2>
<s3>KOR</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Xiang Shen" sort="Xiang Shen" uniqKey="Xiang Shen" last="Xiang Shen">XIANG SHEN</name>
<affiliation><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1>
<s2>Ningbo 315211</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Xunsi Wang" sort="Xunsi Wang" uniqKey="Xunsi Wang" last="Xunsi Wang">XUNSI WANG</name>
<affiliation><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1>
<s2>Ningbo 315211</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Journal of non-crystalline solids</title>
<title level="j" type="abbreviated">J. non-cryst. solids</title>
<idno type="ISSN">0022-3093</idno>
<imprint><date when="2011">2011</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Journal of non-crystalline solids</title>
<title level="j" type="abbreviated">J. non-cryst. solids</title>
<idno type="ISSN">0022-3093</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cesium iodide</term>
<term>Chalcohalide glasses</term>
<term>Doping</term>
<term>Energy-level transitions</term>
<term>Gallium sulfide</term>
<term>Germanium sulfides</term>
<term>Glass ceramics</term>
<term>Grain size</term>
<term>Heat treatments</term>
<term>Mid infrared radiation</term>
<term>Nanocrystal</term>
<term>Optical transition</term>
<term>Photoluminescence</term>
<term>Scanning electron microscopy</term>
<term>Ternary systems</term>
<term>Thulium additions</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Dopage</term>
<term>Addition thulium</term>
<term>Diffraction RX</term>
<term>Microscopie électronique balayage</term>
<term>Transition niveau énergie</term>
<term>Traitement thermique</term>
<term>Grosseur grain</term>
<term>Transition optique</term>
<term>Rayonnement IR moyen</term>
<term>Sulfure de gallium</term>
<term>Nanocristal</term>
<term>Vitrocéramique</term>
<term>Sulfure de germanium</term>
<term>Système ternaire</term>
<term>Iodure de césium</term>
<term>Verre de chalcohalogénure</term>
<term>Verre chacohalogénure</term>
</keywords>
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</teiHeader>
<front><div type="abstract" xml:lang="en">Chalcohalide glass with a composition of 65GeS<sub>2</sub>
-25Ga<sub>2</sub>
S<sub>3</sub>
-10CsI (in mol%) doped with 0.6 wt% Tm<sup>3+</sup>
ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature T<sub>g</sub>
for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga<sub>2</sub>
S<sub>3</sub>
crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of <sup>3</sup>
H<sub>4</sub>
→<sup>3</sup>
H<sub>5</sub>
and <sup>3</sup>
H<sub>5</sub>
→<sup>3</sup>
F<sub>4</sub>
of Tm<sup>3+</sup>
ions were significantly enhanced by the presence of Ga<sub>2</sub>
S<sub>3</sub>
nanocrystals and reached a maximum after 8 hours treatment.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3093</s0>
</fA01>
<fA02 i1="01"><s0>JNCSBJ</s0>
</fA02>
<fA03 i2="1"><s0>J. non-cryst. solids</s0>
</fA03>
<fA05><s2>357</s2>
</fA05>
<fA06><s2>11-13</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Enhanced mid-IR luminescence of Tm<sup>3+</sup>
ions in Ga<sub>2</sub>
S<sub>3</sub>
nanocrystals embedded chalcohalide glass ceramics</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>17th International Symposium on Non-Oxide and New Optical Glasses (XVII ISNOG), June 13-18, 2010, Ningbo, China</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>SHIXUN DAI</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CHANGGUI LIN</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>FEIFEI CHEN</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>XIANGHUA ZHANG</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>CHAO LIU</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>KAI XU</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>HEO (Jong)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>XIANG SHEN</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>XUNSI WANG</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>ZHANG (Long)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>QIU (Jianrong)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1>
<s2>Ningbo 315211</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Laboratoire des verres et Céramiques, Université de Rennes 1</s1>
<s2>Rennes 35042</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology</s1>
<s2>Pohang, Gyeongbuk 790-784</s2>
<s3>KOR</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, P.O. Box 800-211</s1>
<s2>Shangai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Zhejiang University</s1>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>Shanghai Institute of Optics and Fine Mechanics</s1>
<s2>Shangai 201800</s2>
<s3>CHN</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="02" i2="1"><s1>Ningbo University</s1>
<s2>Nigbo</s2>
<s3>CHN</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="03" i2="1"><s1>Chinese Academy of Science (CAS)</s1>
<s2>Beijing</s2>
<s3>CHN</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>2302-2305</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>14572</s2>
<s5>354000192186020220</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>20 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0327149</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of non-crystalline solids</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Chalcohalide glass with a composition of 65GeS<sub>2</sub>
-25Ga<sub>2</sub>
S<sub>3</sub>
-10CsI (in mol%) doped with 0.6 wt% Tm<sup>3+</sup>
ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature T<sub>g</sub>
for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga<sub>2</sub>
S<sub>3</sub>
crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of <sup>3</sup>
H<sub>4</sub>
→<sup>3</sup>
H<sub>5</sub>
and <sup>3</sup>
H<sub>5</sub>
→<sup>3</sup>
F<sub>4</sub>
of Tm<sup>3+</sup>
ions were significantly enhanced by the presence of Ga<sub>2</sub>
S<sub>3</sub>
nanocrystals and reached a maximum after 8 hours treatment.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H55Q</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Dopage</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Doping</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Doping</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>XRD</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Transition niveau énergie</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Energy-level transitions</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Traitement thermique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Heat treatments</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Grosseur grain</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Grain size</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Transition optique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Optical transition</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Transición óptica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Rayonnement IR moyen</s0>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Mid infrared radiation</s0>
<s5>13</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Radiación infrarroja media</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Sulfure de gallium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Gallium sulfide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Galio sulfuro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Nanocristal</s0>
<s5>16</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Nanocrystal</s0>
<s5>16</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Nanocristal</s0>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Vitrocéramique</s0>
<s5>17</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Glass ceramics</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Sulfure de germanium</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Germanium sulfides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Système ternaire</s0>
<s5>19</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Ternary systems</s0>
<s5>19</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Iodure de césium</s0>
<s5>20</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Cesium iodide</s0>
<s5>20</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Cesio ioduro</s0>
<s5>20</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Verre de chalcohalogénure</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Chalcohalide glasses</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Verre chacohalogénure</s0>
<s4>CD</s4>
<s5>97</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Chalcohalide glasses</s0>
<s4>CD</s4>
<s5>97</s5>
</fC03>
<fN21><s1>220</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>XVII ISNOG International Symposium on Non-Oxide and New Optical Glasses</s1>
<s2>17</s2>
<s3>Nigbo CHN</s3>
<s4>2010-06-13</s4>
</fA30>
</pR>
</standard>
<server><NO>PASCAL 11-0327149 INIST</NO>
<ET>Enhanced mid-IR luminescence of Tm<sup>3+</sup>
ions in Ga<sub>2</sub>
S<sub>3</sub>
nanocrystals embedded chalcohalide glass ceramics</ET>
<AU>SHIXUN DAI; CHANGGUI LIN; FEIFEI CHEN; XIANGHUA ZHANG; CHAO LIU; KAI XU; HEO (Jong); XIANG SHEN; XUNSI WANG; ZHANG (Long); QIU (Jianrong)</AU>
<AF>Faculty of Information Science and Engineering, Ningbo University/Ningbo 315211/Chine (1 aut., 2 aut., 3 aut., 8 aut., 9 aut.); Laboratoire des verres et Céramiques, Université de Rennes 1/Rennes 35042/France (4 aut.); Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology/Pohang, Gyeongbuk 790-784/Corée, République de (5 aut., 6 aut., 7 aut.); Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, P.O. Box 800-211/Shangai 201800/Chine (1 aut.); Zhejiang University/Chine (2 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Journal of non-crystalline solids; ISSN 0022-3093; Coden JNCSBJ; Royaume-Uni; Da. 2011; Vol. 357; No. 11-13; Pp. 2302-2305; Bibl. 20 ref.</SO>
<LA>Anglais</LA>
<EA>Chalcohalide glass with a composition of 65GeS<sub>2</sub>
-25Ga<sub>2</sub>
S<sub>3</sub>
-10CsI (in mol%) doped with 0.6 wt% Tm<sup>3+</sup>
ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature T<sub>g</sub>
for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga<sub>2</sub>
S<sub>3</sub>
crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of <sup>3</sup>
H<sub>4</sub>
→<sup>3</sup>
H<sub>5</sub>
and <sup>3</sup>
H<sub>5</sub>
→<sup>3</sup>
F<sub>4</sub>
of Tm<sup>3+</sup>
ions were significantly enhanced by the presence of Ga<sub>2</sub>
S<sub>3</sub>
nanocrystals and reached a maximum after 8 hours treatment.</EA>
<CC>001B70H55Q</CC>
<FD>Photoluminescence; Dopage; Addition thulium; Diffraction RX; Microscopie électronique balayage; Transition niveau énergie; Traitement thermique; Grosseur grain; Transition optique; Rayonnement IR moyen; Sulfure de gallium; Nanocristal; Vitrocéramique; Sulfure de germanium; Système ternaire; Iodure de césium; Verre de chalcohalogénure; Verre chacohalogénure</FD>
<ED>Photoluminescence; Doping; Thulium additions; XRD; Scanning electron microscopy; Energy-level transitions; Heat treatments; Grain size; Optical transition; Mid infrared radiation; Gallium sulfide; Nanocrystal; Glass ceramics; Germanium sulfides; Ternary systems; Cesium iodide; Chalcohalide glasses; Chalcohalide glasses</ED>
<SD>Doping; Transición óptica; Radiación infrarroja media; Galio sulfuro; Nanocristal; Cesio ioduro</SD>
<LO>INIST-14572.354000192186020220</LO>
<ID>11-0327149</ID>
</server>
</inist>
</record>
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