Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films
Identifieur interne : 000709 ( Pascal/Checkpoint ); précédent : 000708; suivant : 000710Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films
Auteurs : M. Dongol [Égypte] ; M. M. El-Nahass [Égypte] ; M. Abou-Zied [Égypte] ; A. El-Denglawey [Égypte]Source :
- EPJ. Applied physics : (Print) [ 1286-0042 ] ; 2007.
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Abstract
Thermal evaporation technique was used to prepare As20Se80-xTlx films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As20Se80-xTlx films. TEP activation energy, ΔEs could be calculated from TEP measurements. It was found that ΔEs decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔEQ could be calculated.
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El-Denglawey</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road</s1><s2>83523, Qena</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>83523, Qena</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">07-0180020</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0180020 INIST</idno><idno type="RBID">Pascal:07-0180020</idno><idno type="wicri:Area/Pascal/Corpus">000788</idno><idno type="wicri:Area/Pascal/Curation">000788</idno><idno type="wicri:Area/Pascal/Checkpoint">000709</idno><idno type="wicri:explorRef" wicri:stream="Pascal" wicri:step="Checkpoint">000709</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Thermoelectric properties and mobility activation energy of amorphous As<sub>20</sub>Se<sub>80-</sub> <sub>x</sub>Tl<sub>x</sub> films</title><author><name sortKey="Dongol, M" sort="Dongol, M" uniqKey="Dongol M" first="M." last="Dongol">M. Dongol</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road</s1><s2>83523, Qena</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>83523, Qena</wicri:noRegion></affiliation></author><author><name sortKey="El Nahass, M M" sort="El Nahass, M M" uniqKey="El Nahass M" first="M. M." last="El-Nahass">M. M. El-Nahass</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physics Department Faculty of Education Ain Shams University</s1><s2>Cairo</s2><s3>EGY</s3><sZ>2 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Physics Department Faculty of Education Ain Shams University</wicri:noRegion></affiliation></author><author><name sortKey="Abou Zied, M" sort="Abou Zied, M" uniqKey="Abou Zied M" first="M." last="Abou-Zied">M. Abou-Zied</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road</s1><s2>83523, Qena</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>83523, Qena</wicri:noRegion></affiliation></author><author><name sortKey="El Denglawey, A" sort="El Denglawey, A" uniqKey="El Denglawey A" first="A." last="El-Denglawey">A. El-Denglawey</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road</s1><s2>83523, Qena</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>83523, Qena</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">EPJ. Applied physics : (Print)</title><title level="j" type="abbreviated">EPJ, Appl. phys. : (Print)</title><idno type="ISSN">1286-0042</idno><imprint><date when="2007">2007</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">EPJ. Applied physics : (Print)</title><title level="j" type="abbreviated">EPJ, Appl. phys. : (Print)</title><idno type="ISSN">1286-0042</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous semiconductors</term><term>Arsenic selenides</term><term>Chalcogenide glasses</term><term>Doped materials</term><term>Quantity ratio</term><term>Semiconductor materials</term><term>Ternary compounds</term><term>Thermoelectric properties</term><term>Thulium additions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur amorphe</term><term>Matériau dopé</term><term>Propriété thermoélectrique</term><term>Semiconducteur</term><term>Composé ternaire</term><term>Verre chalcogénure</term><term>Effet concentration</term><term>Arsenic séléniure</term><term>Addition thulium</term><term>6143D</term><term>7215J</term><term>7120G</term><term>As20Se(80-x)Tl(x)</term><term>As Se Tl</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thermal evaporation technique was used to prepare As<sub>20</sub>Se<sub>80-x</sub>Tl<sub>x</sub> films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As<sub>20</sub>Se<sub>80-x</sub>Tl<sub>x</sub> films. TEP activation energy, ΔE<sub>s</sub> could be calculated from TEP measurements. It was found that ΔE<sub>s</sub> decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔE<sub>Q</sub> could be calculated.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1286-0042</s0></fA01><fA03 i2="1"><s0>EPJ, Appl. phys. : (Print)</s0></fA03><fA05><s2>37</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Thermoelectric properties and mobility activation energy of amorphous As<sub>20</sub>Se<sub>80-</sub> <sub>x</sub>Tl<sub>x</sub> films</s1></fA08><fA11 i1="01" i2="1"><s1>DONGOL (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>EL-NAHASS (M. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>ABOU-ZIED (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>EL-DENGLAWEY (A.)</s1></fA11><fA14 i1="01"><s1>Physics Department Faculty of Sciences South Valley University, 6 Kilo Road</s1><s2>83523, Qena</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Physics Department Faculty of Education Ain Shams University</s1><s2>Cairo</s2><s3>EGY</s3><sZ>2 aut.</sZ></fA14><fA20><s1>257-260</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26690</s2><s5>354000147193310050</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>37 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0180020</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>EPJ. Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>FRA</s0></fA66><fC01 i1="01" l="ENG"><s0>Thermal evaporation technique was used to prepare As<sub>20</sub>Se<sub>80-x</sub>Tl<sub>x</sub> films from bulk materials; (5 ≤ x ≤ 35 at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300-380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As<sub>20</sub>Se<sub>80-x</sub>Tl<sub>x</sub> films. TEP activation energy, ΔE<sub>s</sub> could be calculated from TEP measurements. It was found that ΔE<sub>s</sub> decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, ΔE<sub>Q</sub> could be calculated.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A43D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70B15J</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A20G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur amorphe</s0><s5>47</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Amorphous semiconductors</s0><s5>47</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>50</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Doped materials</s0><s5>50</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Propriété thermoélectrique</s0><s5>61</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Thermoelectric properties</s0><s5>61</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>62</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>62</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>63</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>63</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Verre chalcogénure</s0><s5>64</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Chalcogenide glasses</s0><s5>64</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Effet concentration</s0><s5>65</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Quantity ratio</s0><s5>65</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Arsenic séléniure</s0><s2>NK</s2><s5>66</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Arsenic selenides</s0><s2>NK</s2><s5>66</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Addition thulium</s0><s5>67</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Thulium additions</s0><s5>67</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>6143D</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>7215J</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>7120G</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>As20Se(80-x)Tl(x)</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>As Se Tl</s0><s4>INC</s4><s5>87</s5></fC03><fN21><s1>122</s1></fN21></pA></standard></inist><affiliations><list><country><li>Égypte</li></country></list><tree><country name="Égypte"><noRegion><name sortKey="Dongol, M" sort="Dongol, M" uniqKey="Dongol M" first="M." last="Dongol">M. Dongol</name></noRegion><name sortKey="Abou Zied, M" sort="Abou Zied, M" uniqKey="Abou Zied M" first="M." last="Abou-Zied">M. Abou-Zied</name><name sortKey="El Denglawey, A" sort="El Denglawey, A" uniqKey="El Denglawey A" first="A." last="El-Denglawey">A. El-Denglawey</name><name sortKey="El Nahass, M M" sort="El Nahass, M M" uniqKey="El Nahass M" first="M. M." last="El-Nahass">M. M. El-Nahass</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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