Broadband near-IR emission and temperature dependence in Er/Tm co-doped Bi2O3-SiO2-Ga2O3 glasses
Identifieur interne : 000169 ( Pascal/Checkpoint ); précédent : 000168; suivant : 000170Broadband near-IR emission and temperature dependence in Er/Tm co-doped Bi2O3-SiO2-Ga2O3 glasses
Auteurs : GUOYING ZHAO [République populaire de Chine] ; YING TIAN [République populaire de Chine] ; SHIKAI WANG [République populaire de Chine] ; HUIYAN FAN [République populaire de Chine] ; LILI HU [République populaire de Chine]Source :
- Physica. B, Condensed matter [ 0921-4526 ] ; 2012.
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Abstract
The broadband near-IR emission has been investigated in a series of Er/Tm co-doped Bi2O3-SiO2-Ga2O3 (BSG) glasses with 800 nm laser diode as an excitation source. A broadband emission extending from 1350 to 1650 nm with a full width at half maximum (FWHM) around 165 nm is obtained in 0.2 wt% Er2O3 and 1.0 wt% Tm2O3 co-doped BSG glass. The fluorescence decay curves of glasses are measured and maximum energy transfer efficiency from Er3+ to Tm3+ reaches 71% when Tm3+ concentration is 1.0 wt%. The temperature dependence of the broadband emission spectra in Er3+-Tm3+ co-doped BSG glass is also recorded to further understand the energy-transfer processes between Er3+ and Tm3+. The present work suggests that Er/Tm co-doped BSG glasses can be a potential candidate for broadband integrated amplifier.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Broadband near-IR emission and temperature dependence in Er/Tm co-doped Bi<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub>-Ga<sub>2</sub>O<sub>3</sub> glasses</title><author><name sortKey="Guoying Zhao" sort="Guoying Zhao" uniqKey="Guoying Zhao" last="Guoying Zhao">GUOYING ZHAO</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 201800</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100039</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Ying Tian" sort="Ying Tian" uniqKey="Ying Tian" last="Ying Tian">YING TIAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 201800</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100039</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Shikai Wang" sort="Shikai Wang" uniqKey="Shikai Wang" last="Shikai Wang">SHIKAI WANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 201800</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100039</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Huiyan Fan" sort="Huiyan Fan" uniqKey="Huiyan Fan" last="Huiyan Fan">HUIYAN FAN</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>SCHOTT Glass Technologies (Suzhou) Co., Ltd</s1><s2>Suzhou 215009</s2><s3>CHN</s3><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Suzhou 215009</wicri:noRegion></affiliation></author><author><name sortKey="Lili Hu" sort="Lili Hu" uniqKey="Lili Hu" last="Lili Hu">LILI HU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 201800</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">13-0021060</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 13-0021060 INIST</idno><idno type="RBID">Pascal:13-0021060</idno><idno type="wicri:Area/Pascal/Corpus">000115</idno><idno type="wicri:Area/Pascal/Curation">000115</idno><idno type="wicri:Area/Pascal/Checkpoint">000169</idno><idno type="wicri:explorRef" wicri:stream="Pascal" wicri:step="Checkpoint">000169</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Broadband near-IR emission and temperature dependence in Er/Tm co-doped Bi<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub>-Ga<sub>2</sub>O<sub>3</sub> glasses</title><author><name sortKey="Guoying Zhao" sort="Guoying Zhao" uniqKey="Guoying Zhao" last="Guoying Zhao">GUOYING ZHAO</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 201800</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100039</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Ying Tian" sort="Ying Tian" uniqKey="Ying Tian" last="Ying Tian">YING TIAN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 201800</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100039</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Shikai Wang" sort="Shikai Wang" uniqKey="Shikai Wang" last="Shikai Wang">SHIKAI WANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 201800</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100039</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Huiyan Fan" sort="Huiyan Fan" uniqKey="Huiyan Fan" last="Huiyan Fan">HUIYAN FAN</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>SCHOTT Glass Technologies (Suzhou) Co., Ltd</s1><s2>Suzhou 215009</s2><s3>CHN</s3><sZ>4 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Suzhou 215009</wicri:noRegion></affiliation></author><author><name sortKey="Lili Hu" sort="Lili Hu" uniqKey="Lili Hu" last="Lili Hu">LILI HU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Shanghai 201800</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Physica. B, Condensed matter</title><title level="j" type="abbreviated">Physica, B Condens. matter</title><idno type="ISSN">0921-4526</idno><imprint><date when="2012">2012</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Physica. B, Condensed matter</title><title level="j" type="abbreviated">Physica, B Condens. matter</title><idno type="ISSN">0921-4526</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Bismuth oxide</term><term>Codoping</term><term>Energy transfer</term><term>Erbium additions</term><term>Fluorescence</term><term>Gallium oxide</term><term>Glass</term><term>Infrared radiation</term><term>Luminescence decay</term><term>Photoluminescence</term><term>Raman spectra</term><term>Silicon oxides</term><term>Ternary systems</term><term>Thulium additions</term><term>Wide band</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition erbium</term><term>Addition thulium</term><term>Codopage</term><term>Photoluminescence</term><term>Déclin luminescence</term><term>Transfert énergie</term><term>Rayonnement IR</term><term>Large bande</term><term>Spectre Raman</term><term>Spectre absorption</term><term>Fluorescence</term><term>Oxyde de bismuth</term><term>Oxyde de silicium</term><term>Oxyde de gallium</term><term>Verre</term><term>Système ternaire</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The broadband near-IR emission has been investigated in a series of Er/Tm co-doped Bi<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub>-Ga<sub>2</sub>O<sub>3</sub> (BSG) glasses with 800 nm laser diode as an excitation source. A broadband emission extending from 1350 to 1650 nm with a full width at half maximum (FWHM) around 165 nm is obtained in 0.2 wt% Er<sub>2</sub>O<sub>3</sub> and 1.0 wt% Tm<sub>2</sub>O<sub>3</sub> co-doped BSG glass. The fluorescence decay curves of glasses are measured and maximum energy transfer efficiency from Er<sup>3+</sup> to Tm<sup>3+</sup> reaches 71% when Tm<sup>3+</sup> concentration is 1.0 wt%. The temperature dependence of the broadband emission spectra in Er<sup>3+</sup>-Tm<sup>3+</sup> co-doped BSG glass is also recorded to further understand the energy-transfer processes between Er<sup>3+</sup> and Tm<sup>3+</sup>. The present work suggests that Er/Tm co-doped BSG glasses can be a potential candidate for broadband integrated amplifier.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>407</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Broadband near-IR emission and temperature dependence in Er/Tm co-doped Bi<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub>-Ga<sub>2</sub>O<sub>3</sub> glasses</s1></fA08><fA11 i1="01" i2="1"><s1>GUOYING ZHAO</s1></fA11><fA11 i1="02" i2="1"><s1>YING TIAN</s1></fA11><fA11 i1="03" i2="1"><s1>SHIKAI WANG</s1></fA11><fA11 i1="04" i2="1"><s1>HUIYAN FAN</s1></fA11><fA11 i1="05" i2="1"><s1>LILI HU</s1></fA11><fA14 i1="01"><s1>Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences</s1><s2>Shanghai 201800</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Graduate School of Chinese Academy of Sciences</s1><s2>Beijing 100039</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>SCHOTT Glass Technologies (Suzhou) Co., Ltd</s1><s2>Suzhou 215009</s2><s3>CHN</s3><sZ>4 aut.</sZ></fA14><fA20><s1>4622-4626</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000502944130030</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0021060</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The broadband near-IR emission has been investigated in a series of Er/Tm co-doped Bi<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub>-Ga<sub>2</sub>O<sub>3</sub> (BSG) glasses with 800 nm laser diode as an excitation source. A broadband emission extending from 1350 to 1650 nm with a full width at half maximum (FWHM) around 165 nm is obtained in 0.2 wt% Er<sub>2</sub>O<sub>3</sub> and 1.0 wt% Tm<sub>2</sub>O<sub>3</sub> co-doped BSG glass. The fluorescence decay curves of glasses are measured and maximum energy transfer efficiency from Er<sup>3+</sup> to Tm<sup>3+</sup> reaches 71% when Tm<sup>3+</sup> concentration is 1.0 wt%. The temperature dependence of the broadband emission spectra in Er<sup>3+</sup>-Tm<sup>3+</sup> co-doped BSG glass is also recorded to further understand the energy-transfer processes between Er<sup>3+</sup> and Tm<sup>3+</sup>. The present work suggests that Er/Tm co-doped BSG glasses can be a potential candidate for broadband integrated amplifier.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H55Q</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Addition erbium</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Erbium additions</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Addition thulium</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thulium additions</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Codopage</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Codoping</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Codrogado</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Déclin luminescence</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Luminescence decay</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Decadencia luminiscencia</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Transfert énergie</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Energy transfer</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Rayonnement IR</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Infrared radiation</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Large bande</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Wide band</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Banda ancha</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Spectre Raman</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Raman spectra</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Fluorescence</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Fluorescence</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Oxyde de bismuth</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Bismuth oxide</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Bismuto óxido</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Oxyde de silicium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Silicon oxides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Oxyde de gallium</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Gallium oxide</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Galio óxido</s0><s5>17</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Verre</s0><s5>18</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Glass</s0><s5>18</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Système ternaire</s0><s5>19</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Ternary systems</s0><s5>19</s5></fC03><fN21><s1>014</s1></fN21></pA></standard></inist><affiliations><list><country><li>République populaire de Chine</li></country><settlement><li>Pékin</li></settlement></list><tree><country name="République populaire de Chine"><noRegion><name sortKey="Guoying Zhao" sort="Guoying Zhao" uniqKey="Guoying Zhao" last="Guoying Zhao">GUOYING ZHAO</name></noRegion><name sortKey="Guoying Zhao" sort="Guoying Zhao" uniqKey="Guoying Zhao" last="Guoying Zhao">GUOYING ZHAO</name><name sortKey="Huiyan Fan" sort="Huiyan Fan" uniqKey="Huiyan Fan" last="Huiyan Fan">HUIYAN FAN</name><name sortKey="Lili Hu" sort="Lili Hu" uniqKey="Lili Hu" last="Lili Hu">LILI HU</name><name sortKey="Shikai Wang" sort="Shikai Wang" uniqKey="Shikai Wang" last="Shikai Wang">SHIKAI WANG</name><name sortKey="Shikai Wang" sort="Shikai Wang" uniqKey="Shikai Wang" last="Shikai Wang">SHIKAI WANG</name><name sortKey="Ying Tian" sort="Ying Tian" uniqKey="Ying Tian" last="Ying Tian">YING TIAN</name><name sortKey="Ying Tian" sort="Ying Tian" uniqKey="Ying Tian" last="Ying Tian">YING TIAN</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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