Tunable single frequency thulium:YAG microchip laser with external feedback.
Identifieur interne : 000219 ( Ncbi/Merge ); précédent : 000218; suivant : 000220Tunable single frequency thulium:YAG microchip laser with external feedback.
Auteurs : F F Heine [Allemagne] ; G. HuberSource :
- Applied optics [ 0003-6935 ] ; 1998.
Abstract
By use of the reflection of an uncoated external etalon, a diode-pumped thulium-doped YAG microchip laser was forced into a single-frequency mode. The wavelength of the single-frequency radiation was tunable over 15 nm simply by translation of the etalon relative to the laser. Output powers of 45 mW were achieved in a monolithic setup that is insensitive to vibrations. The origin of the single-frequency oscillation is the wavelength-dependent reflection of the etalon, which is coupled back into the laser resonator. This method permits the combination of inherently stable, single-frequency resonator geometries such as microchips with laser materials that have broad tuning ranges.
PubMed: 18273280
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pubmed:18273280Le document en format XML
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<front><div type="abstract" xml:lang="en">By use of the reflection of an uncoated external etalon, a diode-pumped thulium-doped YAG microchip laser was forced into a single-frequency mode. The wavelength of the single-frequency radiation was tunable over 15 nm simply by translation of the etalon relative to the laser. Output powers of 45 mW were achieved in a monolithic setup that is insensitive to vibrations. The origin of the single-frequency oscillation is the wavelength-dependent reflection of the etalon, which is coupled back into the laser resonator. This method permits the combination of inherently stable, single-frequency resonator geometries such as microchips with laser materials that have broad tuning ranges.</div>
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<Abstract><AbstractText>By use of the reflection of an uncoated external etalon, a diode-pumped thulium-doped YAG microchip laser was forced into a single-frequency mode. The wavelength of the single-frequency radiation was tunable over 15 nm simply by translation of the etalon relative to the laser. Output powers of 45 mW were achieved in a monolithic setup that is insensitive to vibrations. The origin of the single-frequency oscillation is the wavelength-dependent reflection of the etalon, which is coupled back into the laser resonator. This method permits the combination of inherently stable, single-frequency resonator geometries such as microchips with laser materials that have broad tuning ranges.</AbstractText>
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