Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.
Identifieur interne : 000545 ( Ncbi/Checkpoint ); précédent : 000544; suivant : 000546Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition.
Auteurs : Senlin Yang [République populaire de Chine] ; Xuefeng Wang ; Haitao Guo ; Guoping Dong ; Bo Peng ; Jianrong Qiu ; Rong Zhang ; Yi ShiSource :
- Optics express [ 1094-4087 ] ; 2011.
Descripteurs français
- KwdFr :
- MESH :
- effets des radiations : Chalcogènes, Thulium.
- Bencyclane, Chalcogènes, Galvanoplastie, Lasers, Membrane artificielle, Rayons infrarouges, Test de matériaux, Thulium.
English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Bencyclane, Chalcogens, Thulium.
- chemical , radiation effects : Chalcogens, Thulium.
- methods : Electroplating.
- Infrared Rays, Lasers, Materials Testing, Membranes, Artificial.
Abstract
Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.
PubMed: 22274237
Affiliations:
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pubmed:22274237Le document en format XML
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<series><title level="j">Optics express</title>
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<term>Electroplating (methods)</term>
<term>Infrared Rays</term>
<term>Lasers</term>
<term>Materials Testing</term>
<term>Membranes, Artificial</term>
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<front><div type="abstract" xml:lang="en">Structural and near-infrared (NIR) emission properties were investigated in the Tm(3+)-Dy(3+) codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm(3+) to Dy(3+) ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.</div>
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<tree><noCountry><name sortKey="Dong, Guoping" sort="Dong, Guoping" uniqKey="Dong G" first="Guoping" last="Dong">Guoping Dong</name>
<name sortKey="Guo, Haitao" sort="Guo, Haitao" uniqKey="Guo H" first="Haitao" last="Guo">Haitao Guo</name>
<name sortKey="Peng, Bo" sort="Peng, Bo" uniqKey="Peng B" first="Bo" last="Peng">Bo Peng</name>
<name sortKey="Qiu, Jianrong" sort="Qiu, Jianrong" uniqKey="Qiu J" first="Jianrong" last="Qiu">Jianrong Qiu</name>
<name sortKey="Shi, Yi" sort="Shi, Yi" uniqKey="Shi Y" first="Yi" last="Shi">Yi Shi</name>
<name sortKey="Wang, Xuefeng" sort="Wang, Xuefeng" uniqKey="Wang X" first="Xuefeng" last="Wang">Xuefeng Wang</name>
<name sortKey="Zhang, Rong" sort="Zhang, Rong" uniqKey="Zhang R" first="Rong" last="Zhang">Rong Zhang</name>
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<country name="République populaire de Chine"><noRegion><name sortKey="Yang, Senlin" sort="Yang, Senlin" uniqKey="Yang S" first="Senlin" last="Yang">Senlin Yang</name>
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