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Sensitizing effect of Tm3+ on 2.9 μm emission from Dy3+-doped Ge25Ga5S70 glass

Identifieur interne : 002C72 ( Main/Merge ); précédent : 002C71; suivant : 002C73

Sensitizing effect of Tm3+ on 2.9 μm emission from Dy3+-doped Ge25Ga5S70 glass

Auteurs : J. Heo [Corée du Sud] ; W. Y. Cho [Corée du Sud] ; W. J. Chung [Corée du Sud]

Source :

RBID : Pascal:97-0326175

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English descriptors

Abstract

Copyright (c) 1997 Elsevier Science B.V. All rights reserved. Energy transfer mechanisms and the effect of Tm3+ addition on the intensity of the Dy3+:2.9 μm emission from Ge25Ga5S70 glass were investigated. Intensity of the 2.9 μm fluorescence from Dy3+ increased with increasing Tm3+ content when the Dy3+ concentration remained constant, which indicates the presence of an efficient energy transfer between Tm3+ and Dy3+. A decrease in the measured lifetimes of the Tm3+:3F4 level and a wide spectral overlap between the Tm3+:1.8 μm emission and the absorption of Dy3+:6H15/26H11/2 also supported the proposed energy transfer scheme. Analyses of the emission intensities and decay times suggested that a direct energy transfer from the Tm3+:3F4 level to Dy3+:6H11/2 level occurred after a fast diffusion-limited migration of the excitation energy among Tm3+.

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Pascal:97-0326175

Le document en format XML

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<title xml:lang="en" level="a">Sensitizing effect of Tm
<sup>3+</sup>
on 2.9 μm emission from Dy
<sup>3+</sup>
-doped Ge
<sub>25</sub>
Ga
<sub>5</sub>
S
<sub>70</sub>
glass</title>
<author>
<name sortKey="Heo, J" sort="Heo, J" uniqKey="Heo J" first="J." last="Heo">J. Heo</name>
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<title xml:lang="en" level="a">Sensitizing effect of Tm
<sup>3+</sup>
on 2.9 μm emission from Dy
<sup>3+</sup>
-doped Ge
<sub>25</sub>
Ga
<sub>5</sub>
S
<sub>70</sub>
glass</title>
<author>
<name sortKey="Heo, J" sort="Heo, J" uniqKey="Heo J" first="J." last="Heo">J. Heo</name>
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<name sortKey="Cho, W Y" sort="Cho, W Y" uniqKey="Cho W" first="W. Y." last="Cho">W. Y. Cho</name>
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<s1>Non-Crystalline Materials Laboratory, Department of Materials Science and Engineering, Pohang University of Science and Technology</s1>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<wicri:noRegion>Pohang</wicri:noRegion>
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<name sortKey="Chung, W J" sort="Chung, W J" uniqKey="Chung W" first="W. J." last="Chung">W. J. Chung</name>
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<s1>Non-Crystalline Materials Laboratory, Department of Materials Science and Engineering, Pohang University of Science and Technology</s1>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Corée du Sud</country>
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<title level="j" type="main">Journal of non-crystalline solids</title>
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<idno type="ISSN">0022-3093</idno>
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<term>Acceptor donor pair</term>
<term>Chalcogenide glasses</term>
<term>Codoping</term>
<term>Doped materials</term>
<term>Dysprosium additions</term>
<term>Energy transfer</term>
<term>Energy-level transitions</term>
<term>Experimental study</term>
<term>Fluorescence</term>
<term>Gallium sulfides</term>
<term>Germanium sulfides</term>
<term>Lifetime</term>
<term>Luminescence decay</term>
<term>Photoluminescence</term>
<term>Spectral line overlapping</term>
<term>Ternary compounds</term>
<term>Thulium additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Photoluminescence</term>
<term>Fluorescence</term>
<term>Matériau dopé</term>
<term>Codopage</term>
<term>Addition dysprosium</term>
<term>Addition thulium</term>
<term>Transfert énergie</term>
<term>Durée vie</term>
<term>Transition niveau énergie</term>
<term>Recouvrement raie spectrale</term>
<term>Déclin luminescence</term>
<term>Paire accepteur donneur</term>
<term>Etude expérimentale</term>
<term>Verre chalcogénure</term>
<term>Composé ternaire</term>
<term>Germanium sulfure</term>
<term>Gallium sulfure</term>
<term>7855H</term>
<term>Ge25Ga5S70:Dy Tm</term>
<term>Ga Ge S</term>
</keywords>
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<front>
<div type="abstract" xml:lang="en">Copyright (c) 1997 Elsevier Science B.V. All rights reserved. Energy transfer mechanisms and the effect of Tm
<sup>3+</sup>
addition on the intensity of the Dy
<sup>3+</sup>
:2.9 μm emission from Ge
<sub>25</sub>
Ga
<sub>5</sub>
S
<sub>70</sub>
glass were investigated. Intensity of the 2.9 μm fluorescence from Dy
<sup>3+</sup>
increased with increasing Tm
<sup>3+</sup>
content when the Dy
<sup>3+</sup>
concentration remained constant, which indicates the presence of an efficient energy transfer between Tm
<sup>3+</sup>
and Dy
<sup>3+</sup>
. A decrease in the measured lifetimes of the Tm
<sup>3+</sup>
:
<sup>3</sup>
F
<sub>4</sub>
level and a wide spectral overlap between the Tm
<sup>3+</sup>
:1.8 μm emission and the absorption of Dy
<sup>3+</sup>
:
<sup>6</sup>
H
<sub>15/2</sub>
<sup>6</sup>
H
<sub>11/2</sub>
also supported the proposed energy transfer scheme. Analyses of the emission intensities and decay times suggested that a direct energy transfer from the Tm
<sup>3+</sup>
:
<sup>3</sup>
F
<sub>4</sub>
level to Dy
<sup>3+</sup>
:
<sup>6</sup>
H
<sub>11/2</sub>
level occurred after a fast diffusion-limited migration of the excitation energy among Tm
<sup>3+</sup>
.</div>
</front>
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<name sortKey="Chung, W J" sort="Chung, W J" uniqKey="Chung W" first="W. J." last="Chung">W. J. Chung</name>
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