Sensitizing effect of Tm3+ on 2.9 μm emission from Dy3+-doped Ge25Ga5S70 glass
Identifieur interne : 001382 ( Pascal/Curation ); précédent : 001381; suivant : 001383Sensitizing effect of Tm3+ on 2.9 μm emission from Dy3+-doped Ge25Ga5S70 glass
Auteurs : J. Heo [Corée du Sud] ; W. Y. Cho [Corée du Sud] ; W. J. Chung [Corée du Sud]Source :
- Journal of non-crystalline solids [ 0022-3093 ] ; 1997.
Descripteurs français
- Pascal (Inist)
- Photoluminescence, Fluorescence, Matériau dopé, Codopage, Addition dysprosium, Addition thulium, Transfert énergie, Durée vie, Transition niveau énergie, Recouvrement raie spectrale, Déclin luminescence, Paire accepteur donneur, Etude expérimentale, Verre chalcogénure, Composé ternaire, Germanium sulfure, Gallium sulfure, 7855H, Ge25Ga5S70:Dy Tm, Ga Ge S.
English descriptors
- KwdEn :
- Acceptor donor pair, Chalcogenide glasses, Codoping, Doped materials, Dysprosium additions, Energy transfer, Energy-level transitions, Experimental study, Fluorescence, Gallium sulfides, Germanium sulfides, Lifetime, Luminescence decay, Photoluminescence, Spectral line overlapping, Ternary compounds, Thulium additions.
Abstract
Copyright (c) 1997 Elsevier Science B.V. All rights reserved. Energy transfer mechanisms and the effect of Tm3+ addition on the intensity of the Dy3+:2.9 μm emission from Ge25Ga5S70 glass were investigated. Intensity of the 2.9 μm fluorescence from Dy3+ increased with increasing Tm3+ content when the Dy3+ concentration remained constant, which indicates the presence of an efficient energy transfer between Tm3+ and Dy3+. A decrease in the measured lifetimes of the Tm3+:3F4 level and a wide spectral overlap between the Tm3+:1.8 μm emission and the absorption of Dy3+:6H15/2→6H11/2 also supported the proposed energy transfer scheme. Analyses of the emission intensities and decay times suggested that a direct energy transfer from the Tm3+:3F4 level to Dy3+:6H11/2 level occurred after a fast diffusion-limited migration of the excitation energy among Tm3+.
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on 2.9 μm emission from Dy<sup>3+</sup>
-doped Ge<sub>25</sub>
Ga<sub>5</sub>
S<sub>70</sub>
glass</title>
<author><name sortKey="Heo, J" sort="Heo, J" uniqKey="Heo J" first="J." last="Heo">J. Heo</name>
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<country>Corée du Sud</country>
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<author><name sortKey="Cho, W Y" sort="Cho, W Y" uniqKey="Cho W" first="W. Y." last="Cho">W. Y. Cho</name>
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<author><name sortKey="Chung, W J" sort="Chung, W J" uniqKey="Chung W" first="W. J." last="Chung">W. J. Chung</name>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Sensitizing effect of Tm<sup>3+</sup>
on 2.9 μm emission from Dy<sup>3+</sup>
-doped Ge<sub>25</sub>
Ga<sub>5</sub>
S<sub>70</sub>
glass</title>
<author><name sortKey="Heo, J" sort="Heo, J" uniqKey="Heo J" first="J." last="Heo">J. Heo</name>
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<author><name sortKey="Cho, W Y" sort="Cho, W Y" uniqKey="Cho W" first="W. Y." last="Cho">W. Y. Cho</name>
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<author><name sortKey="Chung, W J" sort="Chung, W J" uniqKey="Chung W" first="W. J." last="Chung">W. J. Chung</name>
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<series><title level="j" type="main">Journal of non-crystalline solids</title>
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<imprint><date when="1997">1997</date>
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<term>Dysprosium additions</term>
<term>Energy transfer</term>
<term>Energy-level transitions</term>
<term>Experimental study</term>
<term>Fluorescence</term>
<term>Gallium sulfides</term>
<term>Germanium sulfides</term>
<term>Lifetime</term>
<term>Luminescence decay</term>
<term>Photoluminescence</term>
<term>Spectral line overlapping</term>
<term>Ternary compounds</term>
<term>Thulium additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Fluorescence</term>
<term>Matériau dopé</term>
<term>Codopage</term>
<term>Addition dysprosium</term>
<term>Addition thulium</term>
<term>Transfert énergie</term>
<term>Durée vie</term>
<term>Transition niveau énergie</term>
<term>Recouvrement raie spectrale</term>
<term>Déclin luminescence</term>
<term>Paire accepteur donneur</term>
<term>Etude expérimentale</term>
<term>Verre chalcogénure</term>
<term>Composé ternaire</term>
<term>Germanium sulfure</term>
<term>Gallium sulfure</term>
<term>7855H</term>
<term>Ge25Ga5S70:Dy Tm</term>
<term>Ga Ge S</term>
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<front><div type="abstract" xml:lang="en">Copyright (c) 1997 Elsevier Science B.V. All rights reserved. Energy transfer mechanisms and the effect of Tm<sup>3+</sup>
addition on the intensity of the Dy<sup>3+</sup>
:2.9 μm emission from Ge<sub>25</sub>
Ga<sub>5</sub>
S<sub>70</sub>
glass were investigated. Intensity of the 2.9 μm fluorescence from Dy<sup>3+</sup>
increased with increasing Tm<sup>3+</sup>
content when the Dy<sup>3+</sup>
concentration remained constant, which indicates the presence of an efficient energy transfer between Tm<sup>3+</sup>
and Dy<sup>3+</sup>
. A decrease in the measured lifetimes of the Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
level and a wide spectral overlap between the Tm<sup>3+</sup>
:1.8 μm emission and the absorption of Dy<sup>3+</sup>
:<sup>6</sup>
H<sub>15/2</sub>
→<sup>6</sup>
H<sub>11/2</sub>
also supported the proposed energy transfer scheme. Analyses of the emission intensities and decay times suggested that a direct energy transfer from the Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
level to Dy<sup>3+</sup>
:<sup>6</sup>
H<sub>11/2</sub>
level occurred after a fast diffusion-limited migration of the excitation energy among Tm<sup>3+</sup>
.</div>
</front>
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Ga<sub>5</sub>
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<fC01 i1="01" l="ENG"><s0>Copyright (c) 1997 Elsevier Science B.V. All rights reserved. Energy transfer mechanisms and the effect of Tm<sup>3+</sup>
addition on the intensity of the Dy<sup>3+</sup>
:2.9 μm emission from Ge<sub>25</sub>
Ga<sub>5</sub>
S<sub>70</sub>
glass were investigated. Intensity of the 2.9 μm fluorescence from Dy<sup>3+</sup>
increased with increasing Tm<sup>3+</sup>
content when the Dy<sup>3+</sup>
concentration remained constant, which indicates the presence of an efficient energy transfer between Tm<sup>3+</sup>
and Dy<sup>3+</sup>
. A decrease in the measured lifetimes of the Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
level and a wide spectral overlap between the Tm<sup>3+</sup>
:1.8 μm emission and the absorption of Dy<sup>3+</sup>
:<sup>6</sup>
H<sub>15/2</sub>
→<sup>6</sup>
H<sub>11/2</sub>
also supported the proposed energy transfer scheme. Analyses of the emission intensities and decay times suggested that a direct energy transfer from the Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
level to Dy<sup>3+</sup>
:<sup>6</sup>
H<sub>11/2</sub>
level occurred after a fast diffusion-limited migration of the excitation energy among Tm<sup>3+</sup>
.</s0>
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<s5>05</s5>
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<s5>05</s5>
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<s5>10</s5>
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<s5>10</s5>
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<fC03 i1="11" i2="X" l="FRE"><s0>Déclin luminescence</s0>
<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s5>15</s5>
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<s5>17</s5>
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<s2>NK</s2>
<s5>17</s5>
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<s2>NK</s2>
<s5>18</s5>
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<fC03 i1="17" i2="3" l="ENG"><s0>Gallium sulfides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7855H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Ge25Ga5S70:Dy Tm</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Ga Ge S</s0>
<s4>INC</s4>
<s5>93</s5>
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