Enhancing upconversion emissions of NaTm0.02YbxY0.98-xF4 nanocrystals through increasing Yb3+ doping
Identifieur interne : 000B68 ( Main/Merge ); précédent : 000B67; suivant : 000B69Enhancing upconversion emissions of NaTm0.02YbxY0.98-xF4 nanocrystals through increasing Yb3+ doping
Auteurs : H. J. Liang [République populaire de Chine] ; Y. D. Zheng [République populaire de Chine] ; L. Wu [République populaire de Chine] ; L. X. Liu [République populaire de Chine] ; Z. G. Zhang [République populaire de Chine] ; W. W. Cao [République populaire de Chine, États-Unis]Source :
- Journal of luminescence [ 0022-2313 ] ; 2011.
Descripteurs français
- Pascal (Inist)
- Photoluminescence, Dopage, Processus n photons, Spectre excitation, Composition chimique, Microscopie électronique transmission, Niveau énergie, Déclin luminescence, Conversion fréquence, Sodium Ytterbium Yttrium Fluorure Mixte, Addition thulium, Spectre résolution temporelle, Dimension particule, Nanocristal.
- Wicri :
- topic : Dopage.
English descriptors
- KwdEn :
Abstract
By increasing the content of Yb3+ ions from 20% to 98% in NaTm0.02YbxY0.98-xF4 (x=0.2-0.98) nanocrystals with size about 10 nm, the intensities of near infrared (800 nm) and blue (470 nm) upconversion (UC) luminescence can be enhanced by orders of 45 and 49 times, respectively, under 970 nm diode laser excitation. Pump power dependence illustrated that the 800 and 470 nm radiations are still two- and three-photon processes, respectively. TEM imaging showed that the enhancement is not from the change of the crystal size. Steady-state equation and the measured lifetimes indicated that the enhanced 800 nm radiations can induce the enhancement of the 470 nm emissions, which is in good agreement with the experimental data.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhancing upconversion emissions of NaTm<sub>0.02</sub>Yb<sub>x</sub>Y<sub>0.98-x</sub>F<sub>4</sub> nanocrystals through increasing Yb<sup>3+</sup> doping</title><author><name sortKey="Liang, H J" sort="Liang, H J" uniqKey="Liang H" first="H. J." last="Liang">H. J. Liang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Zheng, Y D" sort="Zheng, Y D" uniqKey="Zheng Y" first="Y. D." last="Zheng">Y. D. Zheng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Wu, L" sort="Wu, L" uniqKey="Wu L" first="L." last="Wu">L. Wu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Liu, L X" sort="Liu, L X" uniqKey="Liu L" first="L. X" last="Liu">L. X. Liu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Zhang, Z G" sort="Zhang, Z G" uniqKey="Zhang Z" first="Z. G." last="Zhang">Z. G. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Cao, W W" sort="Cao, W W" uniqKey="Cao W" first="W. W." last="Cao">W. W. Cao</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Materials Research Institute, The Pennsylvania State University</s1><s2>University Park, 16802 Pennsylvania</s2><s3>USA</s3><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">University Park (Pennsylvanie)</settlement><region type="state">Pennsylvanie</region></placeName><orgName type="university">Université d'État de Pennsylvanie</orgName></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">11-0318723</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0318723 INIST</idno><idno type="RBID">Pascal:11-0318723</idno><idno type="wicri:Area/Pascal/Corpus">000238</idno><idno type="wicri:Area/Pascal/Curation">000238</idno><idno type="wicri:Area/Pascal/Checkpoint">000232</idno><idno type="wicri:explorRef" wicri:stream="Pascal" wicri:step="Checkpoint">000232</idno><idno type="wicri:doubleKey">0022-2313:2011:Liang H:enhancing:upconversion:emissions</idno><idno type="wicri:Area/Main/Merge">000B68</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Enhancing upconversion emissions of NaTm<sub>0.02</sub>Yb<sub>x</sub>Y<sub>0.98-x</sub>F<sub>4</sub> nanocrystals through increasing Yb<sup>3+</sup> doping</title><author><name sortKey="Liang, H J" sort="Liang, H J" uniqKey="Liang H" first="H. J." last="Liang">H. J. Liang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Zheng, Y D" sort="Zheng, Y D" uniqKey="Zheng Y" first="Y. D." last="Zheng">Y. D. Zheng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Wu, L" sort="Wu, L" uniqKey="Wu L" first="L." last="Wu">L. Wu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Liu, L X" sort="Liu, L X" uniqKey="Liu L" first="L. X" last="Liu">L. X. Liu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Zhang, Z G" sort="Zhang, Z G" uniqKey="Zhang Z" first="Z. G." last="Zhang">Z. G. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation></author><author><name sortKey="Cao, W W" sort="Cao, W W" uniqKey="Cao W" first="W. W." last="Cao">W. W. Cao</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Sono- and photo- theranostic Technology, Harbin Institute of Technology</s1><s2>150001 Harbin</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>150001 Harbin</wicri:noRegion></affiliation><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Materials Research Institute, The Pennsylvania State University</s1><s2>University Park, 16802 Pennsylvania</s2><s3>USA</s3><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">University Park (Pennsylvanie)</settlement><region type="state">Pennsylvanie</region></placeName><orgName type="university">Université d'État de Pennsylvanie</orgName></affiliation></author></analytic><series><title level="j" type="main">Journal of luminescence</title><title level="j" type="abbreviated">J. lumin.</title><idno type="ISSN">0022-2313</idno><imprint><date when="2011">2011</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Journal of luminescence</title><title level="j" type="abbreviated">J. lumin.</title><idno type="ISSN">0022-2313</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical composition</term><term>Doping</term><term>Energy levels</term><term>Excitation spectrum</term><term>Frequency conversion</term><term>Luminescence decay</term><term>Multi-photon processes</term><term>Nanocrystal</term><term>Particle size</term><term>Photoluminescence</term><term>Sodium Ytterbium Yttrium Fluorides Mixed</term><term>Thulium additions</term><term>Time resolved spectra</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term><term>Dopage</term><term>Processus n photons</term><term>Spectre excitation</term><term>Composition chimique</term><term>Microscopie électronique transmission</term><term>Niveau énergie</term><term>Déclin luminescence</term><term>Conversion fréquence</term><term>Sodium Ytterbium Yttrium Fluorure Mixte</term><term>Addition thulium</term><term>Spectre résolution temporelle</term><term>Dimension particule</term><term>Nanocristal</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">By increasing the content of Yb<sup>3+</sup> ions from 20% to 98% in NaTm<sub>0.02</sub>Yb<sub>x</sub>Y<sub>0.98-x</sub>F<sub>4</sub> (x=0.2-0.98) nanocrystals with size about 10 nm, the intensities of near infrared (800 nm) and blue (470 nm) upconversion (UC) luminescence can be enhanced by orders of 45 and 49 times, respectively, under 970 nm diode laser excitation. Pump power dependence illustrated that the 800 and 470 nm radiations are still two- and three-photon processes, respectively. TEM imaging showed that the enhancement is not from the change of the crystal size. Steady-state equation and the measured lifetimes indicated that the enhanced 800 nm radiations can induce the enhancement of the 470 nm emissions, which is in good agreement with the experimental data.</div></front></TEI><affiliations><list><country><li>République populaire de Chine</li><li>États-Unis</li></country><region><li>Pennsylvanie</li></region><settlement><li>University Park (Pennsylvanie)</li></settlement><orgName><li>Université d'État de Pennsylvanie</li></orgName></list><tree><country name="République populaire de Chine"><noRegion><name sortKey="Liang, H J" sort="Liang, H J" uniqKey="Liang H" first="H. J." last="Liang">H. J. Liang</name></noRegion><name sortKey="Cao, W W" sort="Cao, W W" uniqKey="Cao W" first="W. W." last="Cao">W. W. Cao</name><name sortKey="Liang, H J" sort="Liang, H J" uniqKey="Liang H" first="H. J." last="Liang">H. J. Liang</name><name sortKey="Liu, L X" sort="Liu, L X" uniqKey="Liu L" first="L. X" last="Liu">L. X. Liu</name><name sortKey="Liu, L X" sort="Liu, L X" uniqKey="Liu L" first="L. X" last="Liu">L. X. Liu</name><name sortKey="Wu, L" sort="Wu, L" uniqKey="Wu L" first="L." last="Wu">L. Wu</name><name sortKey="Zhang, Z G" sort="Zhang, Z G" uniqKey="Zhang Z" first="Z. G." last="Zhang">Z. G. Zhang</name><name sortKey="Zhang, Z G" sort="Zhang, Z G" uniqKey="Zhang Z" first="Z. G." last="Zhang">Z. G. Zhang</name><name sortKey="Zheng, Y D" sort="Zheng, Y D" uniqKey="Zheng Y" first="Y. D." last="Zheng">Y. D. Zheng</name><name sortKey="Zheng, Y D" sort="Zheng, Y D" uniqKey="Zheng Y" first="Y. D." last="Zheng">Y. D. Zheng</name></country><country name="États-Unis"><region name="Pennsylvanie"><name sortKey="Cao, W W" sort="Cao, W W" uniqKey="Cao W" first="W. W." last="Cao">W. W. Cao</name></region></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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