A practical topological insulator saturable absorber for mode-locked fiber laser
Identifieur interne : 000195 ( Main/Merge ); précédent : 000194; suivant : 000196A practical topological insulator saturable absorber for mode-locked fiber laser
Auteurs : Peiguang Yan [République populaire de Chine] ; Rongyong Lin [République populaire de Chine] ; Shuangchen Ruan [République populaire de Chine] ; Aijiang Liu [République populaire de Chine] ; Hao Chen [République populaire de Chine] ; Yuequn Zheng [République populaire de Chine] ; Sifan Chen [République populaire de Chine] ; Chunyu Guo [République populaire de Chine] ; Juguang Hu [République populaire de Chine]Source :
- Scientific Reports [ 2045-2322 ] ; 2015.
Abstract
A novel saturable absorber (SA) was fabricated by coating the topological insulator (TI) film on microfiber using pulsed laser deposition (PLD) method. The TISA device had an insertion loss of ~1.25 dB, a saturable intensity of 26.7 MW/cm2, a modulation depth of ~5.7%, and a nonsaturable loss of 20.5%. Upon employing this SA device, we established a passively mode-locked EDFL and achieved nearly free-chirped soliton pulse with 286 fs of pulse duration and >73 dB of signal to noise ratio (SNR). This result clearly evidences that the PLD is an effective scheme for practical SA device fabrication.
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DOI: 10.1038/srep08690
PubMed: 25732598
PubMed Central: 4346808
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id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Rongyong" sort="Lin, Rongyong" uniqKey="Lin R" first="Rongyong" last="Lin">Rongyong Lin</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Ruan, Shuangchen" sort="Ruan, Shuangchen" uniqKey="Ruan S" first="Shuangchen" last="Ruan">Shuangchen Ruan</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Liu, Aijiang" sort="Liu, Aijiang" uniqKey="Liu A" first="Aijiang" last="Liu">Aijiang Liu</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Chen, Hao" sort="Chen, Hao" uniqKey="Chen H" first="Hao" last="Chen">Hao Chen</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Zheng, Yuequn" sort="Zheng, Yuequn" uniqKey="Zheng Y" first="Yuequn" last="Zheng">Yuequn Zheng</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Chen, Sifan" sort="Chen, Sifan" uniqKey="Chen S" first="Sifan" last="Chen">Sifan Chen</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Guo, Chunyu" sort="Guo, Chunyu" uniqKey="Guo C" first="Chunyu" last="Guo">Chunyu Guo</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Hu, Juguang" sort="Hu, Juguang" uniqKey="Hu J" first="Juguang" last="Hu">Juguang Hu</name><affiliation wicri:level="1"><nlm:aff id="a2"><institution>College of Physics Science and Technology, Shenzhen University</institution>, Shenzhen Guangdong 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author></analytic><series><title level="j">Scientific Reports</title><idno type="eISSN">2045-2322</idno><imprint><date when="2015">2015</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en"><p>A novel saturable absorber (SA) was fabricated by coating the topological insulator (TI) film on microfiber using pulsed laser deposition (PLD) method. The TISA device had an insertion loss of ~1.25 dB, a saturable intensity of 26.7 MW/cm<sup>2</sup>, a modulation depth of ~5.7%, and a nonsaturable loss of 20.5%. Upon employing this SA device, we established a passively mode-locked EDFL and achieved nearly free-chirped soliton pulse with 286 fs of pulse duration and >73 dB of signal to noise ratio (SNR). This result clearly evidences that the PLD is an effective scheme for practical SA device fabrication.</p></div></front><back><div1 type="bibliography"><listBibl><biblStruct><analytic><author><name sortKey="Keller, U K" uniqKey="Keller U">U. K. Keller</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Yamashita, S" uniqKey="Yamashita S">S. Yamashita</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Wang, F" uniqKey="Wang F">F. Wang</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Hasan, T" uniqKey="Hasan T">T. 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Ren</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Huang, S S" uniqKey="Huang S">S. S. Huang</name></author></analytic></biblStruct></listBibl></div1></back></TEI></record>Pour manipuler ce document sous Unix (Dilib)
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