A practical topological insulator saturable absorber for mode-locked fiber laser
Identifieur interne : 000960 ( Ncbi/Merge ); précédent : 000959; suivant : 000961A practical topological insulator saturable absorber for mode-locked fiber laser
Auteurs : Peiguang Yan [République populaire de Chine] ; Rongyong Lin [République populaire de Chine] ; Shuangchen Ruan [République populaire de Chine] ; Aijiang Liu [République populaire de Chine] ; Hao Chen [République populaire de Chine] ; Yuequn Zheng [République populaire de Chine] ; Sifan Chen [République populaire de Chine] ; Chunyu Guo [République populaire de Chine] ; Juguang Hu [République populaire de Chine]Source :
- Scientific Reports [ 2045-2322 ] ; 2015.
Abstract
A novel saturable absorber (SA) was fabricated by coating the topological insulator (TI) film on microfiber using pulsed laser deposition (PLD) method. The TISA device had an insertion loss of ~1.25 dB, a saturable intensity of 26.7 MW/cm2, a modulation depth of ~5.7%, and a nonsaturable loss of 20.5%. Upon employing this SA device, we established a passively mode-locked EDFL and achieved nearly free-chirped soliton pulse with 286 fs of pulse duration and >73 dB of signal to noise ratio (SNR). This result clearly evidences that the PLD is an effective scheme for practical SA device fabrication.
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DOI: 10.1038/srep08690
PubMed: 25732598
PubMed Central: 4346808
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University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Chen, Hao" sort="Chen, Hao" uniqKey="Chen H" first="Hao" last="Chen">Hao Chen</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Zheng, Yuequn" sort="Zheng, Yuequn" uniqKey="Zheng Y" first="Yuequn" last="Zheng">Yuequn Zheng</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Chen, Sifan" sort="Chen, Sifan" uniqKey="Chen S" first="Sifan" last="Chen">Sifan Chen</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Guo, Chunyu" sort="Guo, Chunyu" uniqKey="Guo C" first="Chunyu" last="Guo">Chunyu Guo</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Hu, Juguang" sort="Hu, Juguang" uniqKey="Hu J" first="Juguang" last="Hu">Juguang Hu</name><affiliation wicri:level="1"><nlm:aff id="a2"><institution>College of Physics Science and Technology, Shenzhen University</institution>, Shenzhen Guangdong 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">PMC</idno><idno type="pmid">25732598</idno><idno type="pmc">4346808</idno><idno type="url">http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4346808</idno><idno type="RBID">PMC:4346808</idno><idno type="doi">10.1038/srep08690</idno><date when="2015">2015</date><idno type="wicri:Area/Pmc/Corpus">000079</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Corpus" wicri:corpus="PMC">000079</idno><idno type="wicri:Area/Pmc/Curation">000079</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Curation">000079</idno><idno type="wicri:Area/Pmc/Checkpoint">000085</idno><idno type="wicri:explorRef" wicri:stream="Pmc" wicri:step="Checkpoint">000085</idno><idno type="wicri:Area/Ncbi/Merge">000960</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a" type="main">A practical topological insulator saturable absorber for mode-locked fiber laser</title><author><name sortKey="Yan, Peiguang" sort="Yan, Peiguang" uniqKey="Yan P" first="Peiguang" last="Yan">Peiguang Yan</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Lin, Rongyong" sort="Lin, Rongyong" uniqKey="Lin R" first="Rongyong" last="Lin">Rongyong Lin</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Ruan, Shuangchen" sort="Ruan, Shuangchen" uniqKey="Ruan S" first="Shuangchen" last="Ruan">Shuangchen Ruan</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Liu, Aijiang" sort="Liu, Aijiang" uniqKey="Liu A" first="Aijiang" last="Liu">Aijiang Liu</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Chen, Hao" sort="Chen, Hao" uniqKey="Chen H" first="Hao" last="Chen">Hao Chen</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Zheng, Yuequn" sort="Zheng, Yuequn" uniqKey="Zheng Y" first="Yuequn" last="Zheng">Yuequn Zheng</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Chen, Sifan" sort="Chen, Sifan" uniqKey="Chen S" first="Sifan" last="Chen">Sifan Chen</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Guo, Chunyu" sort="Guo, Chunyu" uniqKey="Guo C" first="Chunyu" last="Guo">Chunyu Guo</name><affiliation wicri:level="1"><nlm:aff id="a1"><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author><author><name sortKey="Hu, Juguang" sort="Hu, Juguang" uniqKey="Hu J" first="Juguang" last="Hu">Juguang Hu</name><affiliation wicri:level="1"><nlm:aff id="a2"><institution>College of Physics Science and Technology, Shenzhen University</institution>, Shenzhen Guangdong 518060,<country>China</country></nlm:aff><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea># see nlm:aff country strict</wicri:regionArea></affiliation></author></analytic><series><title level="j">Scientific Reports</title><idno type="eISSN">2045-2322</idno><imprint><date when="2015">2015</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en"><p>A novel saturable absorber (SA) was fabricated by coating the topological insulator (TI) film on microfiber using pulsed laser deposition (PLD) method. The TISA device had an insertion loss of ~1.25 dB, a saturable intensity of 26.7 MW/cm<sup>2</sup>, a modulation depth of ~5.7%, and a nonsaturable loss of 20.5%. Upon employing this SA device, we established a passively mode-locked EDFL and achieved nearly free-chirped soliton pulse with 286 fs of pulse duration and >73 dB of signal to noise ratio (SNR). This result clearly evidences that the PLD is an effective scheme for practical SA device fabrication.</p></div></front><back><div1 type="bibliography"><listBibl><biblStruct><analytic><author><name sortKey="Keller, U K" uniqKey="Keller U">U. K. Keller</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Yamashita, S" uniqKey="Yamashita S">S. Yamashita</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Wang, F" uniqKey="Wang F">F. Wang</name></author></analytic></biblStruct><biblStruct><analytic><author><name sortKey="Hasan, T" uniqKey="Hasan T">T. 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<front><journal-meta><journal-id journal-id-type="nlm-ta">Sci Rep</journal-id><journal-id journal-id-type="iso-abbrev">Sci Rep</journal-id><journal-title-group><journal-title>Scientific Reports</journal-title></journal-title-group><issn pub-type="epub">2045-2322</issn><publisher><publisher-name>Nature Publishing Group</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="pmid">25732598</article-id><article-id pub-id-type="pmc">4346808</article-id><article-id pub-id-type="pii">srep08690</article-id><article-id pub-id-type="doi">10.1038/srep08690</article-id><article-categories><subj-group subj-group-type="heading"><subject>Article</subject></subj-group></article-categories><title-group><article-title>A practical topological insulator saturable absorber for mode-locked fiber laser</article-title></title-group><contrib-group><contrib contrib-type="author"><name><surname>Yan</surname><given-names>Peiguang</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Lin</surname><given-names>Rongyong</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Ruan</surname><given-names>Shuangchen</given-names></name><xref ref-type="corresp" rid="c1">a</xref><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Liu</surname><given-names>Aijiang</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Chen</surname><given-names>Hao</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Zheng</surname><given-names>Yuequn</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Chen</surname><given-names>Sifan</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Guo</surname><given-names>Chunyu</given-names></name><xref ref-type="aff" rid="a1">1</xref></contrib><contrib contrib-type="author"><name><surname>Hu</surname><given-names>Juguang</given-names></name><xref ref-type="corresp" rid="c2">b</xref><xref ref-type="aff" rid="a2">2</xref></contrib><aff id="a1"><label>1</label><institution>Shenzhen key laboratory of laser engineering, College of Optoelectronic Engineering, Shenzhen University</institution>, ShenZhen, 518060,<country>China</country></aff><aff id="a2"><label>2</label><institution>College of Physics Science and Technology, Shenzhen University</institution>, Shenzhen Guangdong 518060,<country>China</country></aff></contrib-group><author-notes><corresp id="c1"><label>a</label><email>scruan@szu.edu.cn</email></corresp><corresp id="c2"><label>b</label><email>drhu@szu.edu.cn</email></corresp></author-notes><pub-date pub-type="epub"><day>03</day><month>03</month><year>2015</year></pub-date><pub-date pub-type="collection"><year>2015</year></pub-date><volume>5</volume><elocation-id>8690</elocation-id><history><date date-type="received"><day>15</day><month>09</month><year>2014</year></date><date date-type="accepted"><day>30</day><month>01</month><year>2015</year></date></history><permissions><copyright-statement>Copyright © 2015, Macmillan Publishers Limited. All rights reserved</copyright-statement><copyright-year>2015</copyright-year><copyright-holder>Macmillan Publishers Limited. All rights reserved</copyright-holder><license license-type="open-access" xlink:href="http://creativecommons.org/licenses/by/4.0/"><pmc-comment>author-paid</pmc-comment>
<license-p>This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit <ext-link ext-link-type="uri" xlink:href="http://creativecommons.org/licenses/by/4.0/">http://creativecommons.org/licenses/by/4.0/</ext-link></license-p></license></permissions><abstract><p>A novel saturable absorber (SA) was fabricated by coating the topological insulator (TI) film on microfiber using pulsed laser deposition (PLD) method. The TISA device had an insertion loss of ~1.25 dB, a saturable intensity of 26.7 MW/cm<sup>2</sup>, a modulation depth of ~5.7%, and a nonsaturable loss of 20.5%. Upon employing this SA device, we established a passively mode-locked EDFL and achieved nearly free-chirped soliton pulse with 286 fs of pulse duration and >73 dB of signal to noise ratio (SNR). This result clearly evidences that the PLD is an effective scheme for practical SA device fabrication.</p></abstract></article-meta></front><floats-group><fig id="f1"><label>Figure 1</label><caption><p>Characteristics of the microfiber coated with TI film, (a) Side view photo; (b) Evanescent field from the damaged region; (c) Film thickness; (d) Enlarged film surface.</p></caption><graphic xlink:href="srep08690-f1"></graphic></fig><fig id="f2"><label>Figure 2</label><caption><p>(a) EDS of TI film. (b) Raman spectrum of TI film.</p></caption><graphic xlink:href="srep08690-f2"></graphic></fig><fig id="f3"><label>Figure 3</label><caption><p>(a) Measured linear absorption (Inset was TISA packaged by heatshrink tube). (b) Measured nonlinear saturable absorption of the microfiber-based TISA device.</p></caption><graphic xlink:href="srep08690-f3"></graphic></fig><fig id="f4"><label>Figure 4</label><caption><p>Schematic of mode-locked fiber laser with TISA.</p></caption><graphic xlink:href="srep08690-f4"></graphic></fig><fig id="f5"><label>Figure 5</label><caption><p>(a) Optical spectrum of the generated soliton pulses, (b) Autocorrelation trace, (c) RF spectrum of the mode-locked laser.</p></caption><graphic xlink:href="srep08690-f5"></graphic></fig><fig id="f6"><label>Figure 6</label><caption><p>Central wavelength and 3 dB bandwidth of the mode-locked laser measured in 9 days.</p></caption><graphic xlink:href="srep08690-f6"></graphic></fig><table-wrap position="float" id="t1"><label>Table 1</label><caption><title>Typical TISA parameters in recent reports</title></caption><table frame="hsides" rules="groups" border="1"><colgroup><col align="left"></col><col align="center"></col><col align="center"></col><col align="center"></col><col align="center"></col></colgroup><thead valign="bottom"><tr><th align="justify" valign="top" charoff="50">TI SA in ref.</th><th align="center" valign="top" charoff="50"><italic>I</italic><sub>sat</sub> (MW/cm<sup>2</sup>)</th><th align="center" valign="top" charoff="50">Δ<italic>a</italic> (%)</th><th align="center" valign="top" charoff="50"><italic>a</italic><sub>ns </sub>(%)</th><th align="center" valign="top" charoff="50">IL (dB)</th></tr></thead><tbody valign="top"><tr><td align="center" valign="top" charoff="50">Bi<sub>2</sub>Se<sub>3</sub>/PVA film [<xref ref-type="bibr" rid="b23">23</xref>]</td><td align="char" valign="top" char="." charoff="50">11</td><td align="char" valign="top" char="." charoff="50">4.3</td><td align="char" valign="top" char="." charoff="50">36.3</td><td align="char" valign="top" char="." charoff="50">~3.62</td></tr><tr><td align="center" valign="top" charoff="50">Bi<sub>2</sub>Se<sub>3</sub>/PVA film [<xref ref-type="bibr" rid="b24">24</xref>]</td><td align="char" valign="top" char="." charoff="50">12</td><td align="char" valign="top" char="." charoff="50">3.9</td><td align="char" valign="top" char="." charoff="50">67.5</td><td align="char" valign="top" char="." charoff="50"><xref ref-type="fn" rid="t1-fn1">*</xref></td></tr><tr><td align="center" valign="top" charoff="50">Bi2Te3/SPF [<xref ref-type="bibr" rid="b27">27</xref>]</td><td align="char" valign="top" char="." charoff="50"><xref ref-type="fn" rid="t1-fn1">*</xref></td><td align="char" valign="top" char="." charoff="50">15.7</td><td align="char" valign="top" char="." charoff="50">17</td><td align="char" valign="top" char="." charoff="50">1.7</td></tr><tr><td align="center" valign="top" charoff="50">Sb<sub>2</sub>Te<sub>3</sub>/SPF [<xref ref-type="bibr" rid="b29">29</xref>]</td><td align="char" valign="top" char="." charoff="50">31</td><td align="char" valign="top" char="." charoff="50">6</td><td align="char" valign="top" char="." charoff="50">43</td><td align="char" valign="top" char="." charoff="50">~3</td></tr><tr><td align="center" valign="top" charoff="50">Bi<sub>2</sub>Te<sub>3</sub> nanosheets/microfiber [<xref ref-type="bibr" rid="b31">31</xref>]</td><td align="char" valign="top" char="." charoff="50"><xref ref-type="fn" rid="t1-fn1">*</xref></td><td align="char" valign="top" char="." charoff="50">1.7</td><td align="char" valign="top" char="." charoff="50">69.9</td><td align="char" valign="top" char="." charoff="50">5.23</td></tr><tr><td align="center" valign="top" charoff="50">Bi<sub>2</sub>Te<sub>3</sub> PLD film/microfiber <xref ref-type="fn" rid="t1-fn1">**</xref></td><td align="char" valign="top" char="." charoff="50">26.7</td><td align="char" valign="top" char="." charoff="50">5.7</td><td align="char" valign="top" char="." charoff="50">20.5</td><td align="char" valign="top" char="." charoff="50">1.25</td></tr></tbody></table><table-wrap-foot><fn id="t1-fn1"><p>*Not available, **This work.</p></fn></table-wrap-foot></table-wrap></floats-group></pmc><affiliations><list><country><li>République populaire de Chine</li></country></list><tree><country name="République populaire de Chine"><noRegion><name sortKey="Yan, Peiguang" sort="Yan, Peiguang" uniqKey="Yan P" first="Peiguang" last="Yan">Peiguang Yan</name></noRegion><name sortKey="Chen, Hao" sort="Chen, Hao" uniqKey="Chen H" first="Hao" last="Chen">Hao Chen</name><name sortKey="Chen, Sifan" sort="Chen, Sifan" uniqKey="Chen S" first="Sifan" last="Chen">Sifan Chen</name><name sortKey="Guo, Chunyu" sort="Guo, Chunyu" uniqKey="Guo C" first="Chunyu" last="Guo">Chunyu Guo</name><name sortKey="Hu, Juguang" sort="Hu, Juguang" uniqKey="Hu J" first="Juguang" last="Hu">Juguang Hu</name><name sortKey="Lin, Rongyong" sort="Lin, Rongyong" uniqKey="Lin R" first="Rongyong" last="Lin">Rongyong Lin</name><name sortKey="Liu, Aijiang" sort="Liu, Aijiang" uniqKey="Liu A" first="Aijiang" last="Liu">Aijiang Liu</name><name sortKey="Ruan, Shuangchen" sort="Ruan, Shuangchen" uniqKey="Ruan S" first="Shuangchen" last="Ruan">Shuangchen Ruan</name><name sortKey="Zheng, Yuequn" sort="Zheng, Yuequn" uniqKey="Zheng Y" first="Yuequn" last="Zheng">Yuequn Zheng</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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