Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer
Identifieur interne : 000B67 ( Main/Exploration ); précédent : 000B66; suivant : 000B68Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer
Auteurs : Chen-Yan Li [Taïwan] ; Ying-Nien Chou [Taïwan] ; Jia-Rong Syu [Taïwan] ; Sung-Nien Hsieh [Taïwan] ; Tzung-Da Tsai [Taïwan] ; Chen-Hao Wu [Taïwan] ; Tzung-Fang Guo [Taïwan] ; Wei-Chou Hsu [Taïwan] ; Yao-Jane Hsu [Taïwan] ; Ten-Chin Wen [Taïwan]Source :
- Organic electronics : (Print) [ 1566-1199 ] ; 2011.
Descripteurs français
- Pascal (Inist)
- Recuit, Evaluation performance, Diode électroluminescente, Configuration elliptique, Dipôle, Niveau énergie, Hauteur barrière, Caractéristique capacité tension, Injection électron, Seuil tension, Couche autoassemblée, Oxyde de zinc, Polymère, Sulfure de thulium, ZnO, TmS, Couche d'injection d'électrons, Couche de blocage d'électrons, Couche de blocage de trous.
- Wicri :
- topic : Polymère.
English descriptors
- KwdEn :
- Annealing, Barrier height, Dipole, Electron blocking layer, Electron injection, Electron injection layer, Elliptical configuration, Energy level, Hole blocking layer, Light emitting diode, Performance evaluation, Polymer, Self-assembled layer, Thulium sulfides, Voltage capacity curve, Voltage threshold, Zinc oxide.
Abstract
An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily)propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy level shifts of ultra-violet photoelectron spectroscopic observations, reducing the barrier height between ZnO and the emissive layer. The effect of annealing ZnO on the performance of PLEDs was analyzed using an electron-only device and capacitance-voltage (C-V) characterization. Following annealing at 300 °C, ZnO provided effective electron injection and blocked holes, which enhanced the recombination of the electrons and holes. The eletroluminescence efficiency of an inverted PLED with a ZnO/PEDA-TMS layer is comparable to that of a conventional device. The electron injection mechanism of the inverted device can be explained by C-V behaviors, which are correlated with the threshold voltage and turn-on voltage.
Affiliations:
Links toward previous steps (curation, corpus...)
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Le document en format XML
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<series><title level="j" type="main">Organic electronics : (Print)</title>
<title level="j" type="abbreviated">Org. electron. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Barrier height</term>
<term>Dipole</term>
<term>Electron blocking layer</term>
<term>Electron injection</term>
<term>Electron injection layer</term>
<term>Elliptical configuration</term>
<term>Energy level</term>
<term>Hole blocking layer</term>
<term>Light emitting diode</term>
<term>Performance evaluation</term>
<term>Polymer</term>
<term>Self-assembled layer</term>
<term>Thulium sulfides</term>
<term>Voltage capacity curve</term>
<term>Voltage threshold</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term>
<term>Evaluation performance</term>
<term>Diode électroluminescente</term>
<term>Configuration elliptique</term>
<term>Dipôle</term>
<term>Niveau énergie</term>
<term>Hauteur barrière</term>
<term>Caractéristique capacité tension</term>
<term>Injection électron</term>
<term>Seuil tension</term>
<term>Couche autoassemblée</term>
<term>Oxyde de zinc</term>
<term>Polymère</term>
<term>Sulfure de thulium</term>
<term>ZnO</term>
<term>TmS</term>
<term>Couche d'injection d'électrons</term>
<term>Couche de blocage d'électrons</term>
<term>Couche de blocage de trous</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Polymère</term>
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<front><div type="abstract" xml:lang="en">An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily)propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy level shifts of ultra-violet photoelectron spectroscopic observations, reducing the barrier height between ZnO and the emissive layer. The effect of annealing ZnO on the performance of PLEDs was analyzed using an electron-only device and capacitance-voltage (C-V) characterization. Following annealing at 300 °C, ZnO provided effective electron injection and blocked holes, which enhanced the recombination of the electrons and holes. The eletroluminescence efficiency of an inverted PLED with a ZnO/PEDA-TMS layer is comparable to that of a conventional device. The electron injection mechanism of the inverted device can be explained by C-V behaviors, which are correlated with the threshold voltage and turn-on voltage.</div>
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<tree><country name="Taïwan"><noRegion><name sortKey="Li, Chen Yan" sort="Li, Chen Yan" uniqKey="Li C" first="Chen-Yan" last="Li">Chen-Yan Li</name>
</noRegion>
<name sortKey="Chou, Ying Nien" sort="Chou, Ying Nien" uniqKey="Chou Y" first="Ying-Nien" last="Chou">Ying-Nien Chou</name>
<name sortKey="Guo, Tzung Fang" sort="Guo, Tzung Fang" uniqKey="Guo T" first="Tzung-Fang" last="Guo">Tzung-Fang Guo</name>
<name sortKey="Guo, Tzung Fang" sort="Guo, Tzung Fang" uniqKey="Guo T" first="Tzung-Fang" last="Guo">Tzung-Fang Guo</name>
<name sortKey="Hsieh, Sung Nien" sort="Hsieh, Sung Nien" uniqKey="Hsieh S" first="Sung-Nien" last="Hsieh">Sung-Nien Hsieh</name>
<name sortKey="Hsu, Wei Chou" sort="Hsu, Wei Chou" uniqKey="Hsu W" first="Wei-Chou" last="Hsu">Wei-Chou Hsu</name>
<name sortKey="Hsu, Wei Chou" sort="Hsu, Wei Chou" uniqKey="Hsu W" first="Wei-Chou" last="Hsu">Wei-Chou Hsu</name>
<name sortKey="Hsu, Yao Jane" sort="Hsu, Yao Jane" uniqKey="Hsu Y" first="Yao-Jane" last="Hsu">Yao-Jane Hsu</name>
<name sortKey="Li, Chen Yan" sort="Li, Chen Yan" uniqKey="Li C" first="Chen-Yan" last="Li">Chen-Yan Li</name>
<name sortKey="Syu, Jia Rong" sort="Syu, Jia Rong" uniqKey="Syu J" first="Jia-Rong" last="Syu">Jia-Rong Syu</name>
<name sortKey="Tsai, Tzung Da" sort="Tsai, Tzung Da" uniqKey="Tsai T" first="Tzung-Da" last="Tsai">Tzung-Da Tsai</name>
<name sortKey="Wen, Ten Chin" sort="Wen, Ten Chin" uniqKey="Wen T" first="Ten-Chin" last="Wen">Ten-Chin Wen</name>
<name sortKey="Wen, Ten Chin" sort="Wen, Ten Chin" uniqKey="Wen T" first="Ten-Chin" last="Wen">Ten-Chin Wen</name>
<name sortKey="Wu, Chen Hao" sort="Wu, Chen Hao" uniqKey="Wu C" first="Chen-Hao" last="Wu">Chen-Hao Wu</name>
</country>
</tree>
</affiliations>
</record>
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