ThuliumV1, Main, Curation, bibRecord, 000B67

Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer

Identifieur interne : 000B67 ( Main/Curation ); précédent : 000B66; suivant : 000B68

Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer

Auteurs : Chen-Yan Li [Taïwan] ; Ying-Nien Chou [Taïwan] ; Jia-Rong Syu [Taïwan] ; Sung-Nien Hsieh [Taïwan] ; Tzung-Da Tsai [Taïwan] ; Chen-Hao Wu [Taïwan] ; Tzung-Fang Guo [Taïwan] ; Wei-Chou Hsu [Taïwan] ; Yao-Jane Hsu [Taïwan] ; Ten-Chin Wen [Taïwan]

Source :

Organic electronics : (Print) [ 1566-1199 ] ; 2011.

RBID : Pascal:11-0360187

Descripteurs français

Pascal (Inist)
- Recuit, Evaluation performance, Diode électroluminescente, Configuration elliptique, Dipôle, Niveau énergie, Hauteur barrière, Caractéristique capacité tension, Injection électron, Seuil tension, Couche autoassemblée, Oxyde de zinc, Polymère, Sulfure de thulium, ZnO, TmS, Couche d'injection d'électrons, Couche de blocage d'électrons, Couche de blocage de trous.
Wicri :
- topic : Polymère.

English descriptors

KwdEn :
- Annealing, Barrier height, Dipole, Electron blocking layer, Electron injection, Electron injection layer, Elliptical configuration, Energy level, Hole blocking layer, Light emitting diode, Performance evaluation, Polymer, Self-assembled layer, Thulium sulfides, Voltage capacity curve, Voltage threshold, Zinc oxide.

Abstract

An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily)propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy level shifts of ultra-violet photoelectron spectroscopic observations, reducing the barrier height between ZnO and the emissive layer. The effect of annealing ZnO on the performance of PLEDs was analyzed using an electron-only device and capacitance-voltage (C-V) characterization. Following annealing at 300 °C, ZnO provided effective electron injection and blocked holes, which enhanced the recombination of the electrons and holes. The eletroluminescence efficiency of an inverted PLED with a ZnO/PEDA-TMS layer is comparable to that of a conventional device. The electron injection mechanism of the inverted device can be explained by C-V behaviors, which are correlated with the threshold voltage and turn-on voltage.

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Le document en format XML

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<series><title level="j" type="main">Organic electronics : (Print)</title>
<title level="j" type="abbreviated">Org. electron. : (Print)</title>
<idno type="ISSN">1566-1199</idno>
<imprint><date when="2011">2011</date>
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<seriesStmt><title level="j" type="main">Organic electronics : (Print)</title>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Barrier height</term>
<term>Dipole</term>
<term>Electron blocking layer</term>
<term>Electron injection</term>
<term>Electron injection layer</term>
<term>Elliptical configuration</term>
<term>Energy level</term>
<term>Hole blocking layer</term>
<term>Light emitting diode</term>
<term>Performance evaluation</term>
<term>Polymer</term>
<term>Self-assembled layer</term>
<term>Thulium sulfides</term>
<term>Voltage capacity curve</term>
<term>Voltage threshold</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Recuit</term>
<term>Evaluation performance</term>
<term>Diode électroluminescente</term>
<term>Configuration elliptique</term>
<term>Dipôle</term>
<term>Niveau énergie</term>
<term>Hauteur barrière</term>
<term>Caractéristique capacité tension</term>
<term>Injection électron</term>
<term>Seuil tension</term>
<term>Couche autoassemblée</term>
<term>Oxyde de zinc</term>
<term>Polymère</term>
<term>Sulfure de thulium</term>
<term>ZnO</term>
<term>TmS</term>
<term>Couche d'injection d'électrons</term>
<term>Couche de blocage d'électrons</term>
<term>Couche de blocage de trous</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Polymère</term>
</keywords>
</textClass>
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</teiHeader>
<front><div type="abstract" xml:lang="en">An efficient electron injection/hole blocking layer, N-[3-(trimethoxysily)propyl]ethylenediamine that was grafted onto zinc oxide (ZnO/PEDA-TMS), was used in inverted polymer light-emitting diodes (PLEDs). PEDA-TMS induced a strong dipole directed towards ZnO, which was enhanced by vacuum energy level shifts of ultra-violet photoelectron spectroscopic observations, reducing the barrier height between ZnO and the emissive layer. The effect of annealing ZnO on the performance of PLEDs was analyzed using an electron-only device and capacitance-voltage (C-V) characterization. Following annealing at 300 °C, ZnO provided effective electron injection and blocked holes, which enhanced the recombination of the electrons and holes. The eletroluminescence efficiency of an inverted PLED with a ZnO/PEDA-TMS layer is comparable to that of a conventional device. The electron injection mechanism of the inverted device can be explained by C-V behaviors, which are correlated with the threshold voltage and turn-on voltage.</div>
</front>
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Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer

Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer

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