Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics
Identifieur interne : 000B63 ( Main/Exploration ); précédent : 000B62; suivant : 000B64Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics
Auteurs : SHIXUN DAI [République populaire de Chine] ; CHANGGUI LIN [République populaire de Chine] ; FEIFEI CHEN [République populaire de Chine] ; XIANGHUA ZHANG [France] ; CHAO LIU [Corée du Sud] ; KAI XU [Corée du Sud] ; Jong Heo [Corée du Sud] ; XIANG SHEN [République populaire de Chine] ; XUNSI WANG [République populaire de Chine]Source :
- Journal of non-crystalline solids [ 0022-3093 ] ; 2011.
Descripteurs français
- Pascal (Inist)
- Photoluminescence, Dopage, Addition thulium, Diffraction RX, Microscopie électronique balayage, Transition niveau énergie, Traitement thermique, Grosseur grain, Transition optique, Rayonnement IR moyen, Sulfure de gallium, Nanocristal, Vitrocéramique, Sulfure de germanium, Système ternaire, Iodure de césium, Verre de chalcohalogénure, Verre chacohalogénure.
- Wicri :
- topic : Dopage.
English descriptors
- KwdEn :
Abstract
Chalcohalide glass with a composition of 65GeS2-25Ga2S3-10CsI (in mol%) doped with 0.6 wt% Tm3+ ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature Tg for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga2S3 crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of 3H4→3H5 and 3H5→3F4 of Tm3+ ions were significantly enhanced by the presence of Ga2S3 nanocrystals and reached a maximum after 8 hours treatment.
Affiliations:
- Corée du Sud, France, République populaire de Chine
- Région Bretagne
- Rennes
- Université de Rennes 1, Université européenne de Bretagne
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when="2011">2011</date><idno type="stanalyst">PASCAL 11-0327149 INIST</idno><idno type="RBID">Pascal:11-0327149</idno><idno type="wicri:Area/Pascal/Corpus">000236</idno><idno type="wicri:Area/Pascal/Curation">000236</idno><idno type="wicri:Area/Pascal/Checkpoint">000234</idno><idno type="wicri:explorRef" wicri:stream="Pascal" wicri:step="Checkpoint">000234</idno><idno type="wicri:doubleKey">0022-3093:2011:Shixun Dai:enhanced:mid:ir</idno><idno type="wicri:Area/Main/Merge">000B70</idno><idno type="wicri:Area/Main/Curation">000B63</idno><idno type="wicri:Area/Main/Exploration">000B63</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Enhanced mid-IR luminescence of Tm<sup>3+</sup> ions in Ga<sub>2</sub>S<sub>3</sub> nanocrystals embedded chalcohalide glass ceramics</title><author><name sortKey="Shixun Dai" sort="Shixun Dai" uniqKey="Shixun Dai" last="Shixun Dai">SHIXUN DAI</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1><s2>Ningbo 315211</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo 315211</wicri:noRegion></affiliation></author><author><name sortKey="Changgui Lin" sort="Changgui Lin" uniqKey="Changgui Lin" last="Changgui Lin">CHANGGUI LIN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1><s2>Ningbo 315211</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo 315211</wicri:noRegion></affiliation></author><author><name sortKey="Feifei Chen" sort="Feifei Chen" uniqKey="Feifei Chen" last="Feifei Chen">FEIFEI CHEN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1><s2>Ningbo 315211</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo 315211</wicri:noRegion></affiliation></author><author><name sortKey="Xianghua Zhang" sort="Xianghua Zhang" uniqKey="Xianghua Zhang" last="Xianghua Zhang">XIANGHUA ZHANG</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Laboratoire des verres et Céramiques, Université de Rennes 1</s1><s2>Rennes 35042</s2><s3>FRA</s3><sZ>4 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>35042</wicri:noRegion><wicri:noRegion>Université de Rennes 1</wicri:noRegion><placeName><settlement type="city">Rennes</settlement><region type="region" nuts="2">Région Bretagne</region></placeName><orgName type="university">Université de Rennes 1</orgName><orgName type="institution" wicri:auto="newGroup">Université européenne de Bretagne</orgName></affiliation></author><author><name sortKey="Chao Liu" sort="Chao Liu" uniqKey="Chao Liu" last="Chao Liu">CHAO LIU</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology</s1><s2>Pohang, Gyeongbuk 790-784</s2><s3>KOR</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Pohang, Gyeongbuk 790-784</wicri:noRegion></affiliation></author><author><name sortKey="Kai Xu" sort="Kai Xu" uniqKey="Kai Xu" last="Kai Xu">KAI XU</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology</s1><s2>Pohang, Gyeongbuk 790-784</s2><s3>KOR</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Pohang, Gyeongbuk 790-784</wicri:noRegion></affiliation></author><author><name sortKey="Heo, Jong" sort="Heo, Jong" uniqKey="Heo J" first="Jong" last="Heo">Jong Heo</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology</s1><s2>Pohang, Gyeongbuk 790-784</s2><s3>KOR</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Pohang, Gyeongbuk 790-784</wicri:noRegion></affiliation></author><author><name sortKey="Xiang Shen" sort="Xiang Shen" uniqKey="Xiang Shen" last="Xiang Shen">XIANG SHEN</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1><s2>Ningbo 315211</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo 315211</wicri:noRegion></affiliation></author><author><name sortKey="Xunsi Wang" sort="Xunsi Wang" uniqKey="Xunsi Wang" last="Xunsi Wang">XUNSI WANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Information Science and Engineering, Ningbo University</s1><s2>Ningbo 315211</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>République populaire de Chine</country><wicri:noRegion>Ningbo 315211</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Journal of non-crystalline solids</title><title level="j" type="abbreviated">J. non-cryst. solids</title><idno type="ISSN">0022-3093</idno><imprint><date when="2011">2011</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Journal of non-crystalline solids</title><title level="j" type="abbreviated">J. non-cryst. solids</title><idno type="ISSN">0022-3093</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cesium iodide</term><term>Chalcohalide glasses</term><term>Doping</term><term>Energy-level transitions</term><term>Gallium sulfide</term><term>Germanium sulfides</term><term>Glass ceramics</term><term>Grain size</term><term>Heat treatments</term><term>Mid infrared radiation</term><term>Nanocrystal</term><term>Optical transition</term><term>Photoluminescence</term><term>Scanning electron microscopy</term><term>Ternary systems</term><term>Thulium additions</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term><term>Dopage</term><term>Addition thulium</term><term>Diffraction RX</term><term>Microscopie électronique balayage</term><term>Transition niveau énergie</term><term>Traitement thermique</term><term>Grosseur grain</term><term>Transition optique</term><term>Rayonnement IR moyen</term><term>Sulfure de gallium</term><term>Nanocristal</term><term>Vitrocéramique</term><term>Sulfure de germanium</term><term>Système ternaire</term><term>Iodure de césium</term><term>Verre de chalcohalogénure</term><term>Verre chacohalogénure</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Chalcohalide glass with a composition of 65GeS<sub>2</sub>-25Ga<sub>2</sub>S<sub>3</sub>-10CsI (in mol%) doped with 0.6 wt% Tm<sup>3+</sup> ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature T<sub>g</sub> for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga<sub>2</sub>S<sub>3</sub> crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of <sup>3</sup>H<sub>4</sub>→<sup>3</sup>H<sub>5</sub> and <sup>3</sup>H<sub>5</sub>→<sup>3</sup>F<sub>4</sub> of Tm<sup>3+</sup> ions were significantly enhanced by the presence of Ga<sub>2</sub>S<sub>3</sub> nanocrystals and reached a maximum after 8 hours treatment.</div></front></TEI><affiliations><list><country><li>Corée du Sud</li><li>France</li><li>République populaire de Chine</li></country><region><li>Région Bretagne</li></region><settlement><li>Rennes</li></settlement><orgName><li>Université de Rennes 1</li><li>Université européenne de Bretagne</li></orgName></list><tree><country name="République populaire de Chine"><noRegion><name sortKey="Shixun Dai" sort="Shixun Dai" uniqKey="Shixun Dai" last="Shixun Dai">SHIXUN DAI</name></noRegion><name sortKey="Changgui Lin" sort="Changgui Lin" uniqKey="Changgui Lin" last="Changgui Lin">CHANGGUI LIN</name><name sortKey="Feifei Chen" sort="Feifei Chen" uniqKey="Feifei Chen" last="Feifei Chen">FEIFEI CHEN</name><name sortKey="Xiang Shen" sort="Xiang Shen" uniqKey="Xiang Shen" last="Xiang Shen">XIANG SHEN</name><name sortKey="Xunsi Wang" sort="Xunsi Wang" uniqKey="Xunsi Wang" last="Xunsi Wang">XUNSI WANG</name></country><country name="France"><region name="Région Bretagne"><name sortKey="Xianghua Zhang" sort="Xianghua Zhang" uniqKey="Xianghua Zhang" last="Xianghua Zhang">XIANGHUA ZHANG</name></region></country><country name="Corée du Sud"><noRegion><name sortKey="Chao Liu" sort="Chao Liu" uniqKey="Chao Liu" last="Chao Liu">CHAO LIU</name></noRegion><name sortKey="Heo, Jong" sort="Heo, Jong" uniqKey="Heo J" first="Jong" last="Heo">Jong Heo</name><name sortKey="Kai Xu" sort="Kai Xu" uniqKey="Kai Xu" last="Kai Xu">KAI XU</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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