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Effect of Tb3+ co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses

Identifieur interne : 002192 ( Main/Exploration ); précédent : 002191; suivant : 002193

Effect of Tb3+ co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses

Auteurs : Yong Beom Shin [Corée du Sud] ; Ji Hyun Kim [Corée du Sud] ; You Song Kim [Corée du Sud] ; Jong Heo [Corée du Sud]

Source :

Journal of applied physics [ 0021-8979 ] ; 2000-09-01.

RBID : Pascal:00-0355014

Descripteurs français

Pascal (Inist)
- 7855H, 7155J, Etude expérimentale, Inversion population, Verre germanate, Verre chalcogénure, Gallium composé, Terbium, Thulium, Etat impureté, Fluorescence, Spectre absorption impureté.

English descriptors

KwdEn :
- Chalcogenide glasses, Experimental study, Fluorescence, Gallium compounds, Germanate glasses, Impurity absorption spectra, Impurity states, Population inversion, Terbium, Thulium.

Abstract

The 1.48-μm emission properties and electron population densities of the excited levels were investigated for Ge-As-Ga-S glasses doped with Tm³⁺ or Tm³⁺/Tb³⁺. Electron population inversion between the ³H₄ and ³F₄ levels in Tm³⁺ cannot be achieved without Tb³⁺ addition due to the strong cross-relaxation in Tm³⁺. Co-doping of Tb³⁺ resulted in the large decrease in the population density of the Tm³⁺:³F₄ level via the energy transfer of Tm³⁺:³F₄→Tb³⁺:⁷F_0,1,2. Calculated population densities of the two levels in Tm³⁺ using the rate equations showed that the population inversion became possible through the addition of Tb³⁺. © 2000 American Institute of Physics.

Affiliations:

Corée du Sud

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Le document en format XML

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<term>Gallium compounds</term>
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<term>Impurity absorption spectra</term>
<term>Impurity states</term>
<term>Population inversion</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>7855H</term>
<term>7155J</term>
<term>Etude expérimentale</term>
<term>Inversion population</term>
<term>Verre germanate</term>
<term>Verre chalcogénure</term>
<term>Gallium composé</term>
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<front><div type="abstract" xml:lang="en">The 1.48-μm emission properties and electron population densities of the excited levels were investigated for Ge-As-Ga-S glasses doped with Tm<sup>3+</sup>
 or Tm<sup>3+</sup>
/Tb<sup>3+</sup>
. Electron population inversion between the <sup>3</sup>
H<sub>4</sub>
 and <sup>3</sup>
F<sub>4</sub>
 levels in Tm<sup>3+</sup>
 cannot be achieved without Tb<sup>3+</sup>
 addition due to the strong cross-relaxation in Tm<sup>3+</sup>
. Co-doping of Tb<sup>3+</sup>
 resulted in the large decrease in the population density of the Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
 level via the energy transfer of Tm<sup>3+</sup>
:<sup>3</sup>
F<sub>4</sub>
→Tb<sup>3+</sup>
:<sup>7</sup>
F<sub>0,1,2</sub>
. Calculated population densities of the two levels in Tm<sup>3+</sup>
 using the rate equations showed that the population inversion became possible through the addition of Tb<sup>3+</sup>
. © 2000 American Institute of Physics.</div>
</front>
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<name sortKey="Kim, You Song" sort="Kim, You Song" uniqKey="Kim Y" first="You Song" last="Kim">You Song Kim</name>
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</record>

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Effect of Tb3+ co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses

Effect of Tb3+ co-doping on the electron population densities of Tm3+ in Ge-As-Ga-S glasses

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

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