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Broadband Near‐IR Emission in Tm/Er‐Codoped GeS2–In2S3‐Based Chalcohalide Glasses

Identifieur interne : 001042 ( Main/Curation ); précédent : 001041; suivant : 001043

Broadband Near‐IR Emission in Tm/Er‐Codoped GeS2–In2S3‐Based Chalcohalide Glasses

Auteurs : Yinsheng Xu [République populaire de Chine] ; Qiang Zhang [République populaire de Chine] ; Ce Shen [République populaire de Chine] ; Danping Chen [République populaire de Chine] ; Huidan Zeng [République populaire de Chine] ; Guorong Chen [République populaire de Chine]

Source :

RBID : ISTEX:28953E07351D183874CA1B6A20758E6B2D67E41C

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English descriptors

Abstract

The near IR emission spectra of Tm/Er‐codoped GeS2–In2S3‐based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full‐width at half‐maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3‐codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.

Url:
DOI: 10.1111/j.1551-2916.2009.03322.x

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ISTEX:28953E07351D183874CA1B6A20758E6B2D67E41C

Le document en format XML

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<div type="abstract">The near IR emission spectra of Tm/Er‐codoped GeS2–In2S3‐based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full‐width at half‐maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3‐codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.</div>
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