Broadband Near‐IR Emission in Tm/Er‐Codoped GeS2–In2S3‐Based Chalcohalide Glasses
Identifieur interne : 000904 ( Istex/Corpus ); précédent : 000903; suivant : 000905Broadband Near‐IR Emission in Tm/Er‐Codoped GeS2–In2S3‐Based Chalcohalide Glasses
Auteurs : Yinsheng Xu ; Qiang Zhang ; Ce Shen ; Danping Chen ; Huidan Zeng ; Guorong ChenSource :
- Journal of the American Ceramic Society [ 0002-7820 ] ; 2009-12.
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Abstract
The near IR emission spectra of Tm/Er‐codoped GeS2–In2S3‐based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full‐width at half‐maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3‐codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.
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DOI: 10.1111/j.1551-2916.2009.03322.x
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ISTEX:28953E07351D183874CA1B6A20758E6B2D67E41CLe document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Broadband Near‐IR Emission in Tm/Er‐Codoped GeS2–In2S3‐Based Chalcohalide Glasses</title><author><name sortKey="Xu, Yinsheng" sort="Xu, Yinsheng" uniqKey="Xu Y" first="Yinsheng" last="Xu">Yinsheng Xu</name><affiliation><mods:affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</mods:affiliation></affiliation></author><author><name sortKey="Zhang, Qiang" sort="Zhang, Qiang" uniqKey="Zhang Q" first="Qiang" last="Zhang">Qiang Zhang</name><affiliation><mods:affiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</mods:affiliation></affiliation><affiliation><mods:affiliation>Graduate School of the Chinese Academy of Sciences, Beijing 100039, China</mods:affiliation></affiliation></author><author><name sortKey="Shen, Ce" sort="Shen, Ce" uniqKey="Shen C" first="Ce" last="Shen">Ce Shen</name><affiliation><mods:affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</mods:affiliation></affiliation></author><author><name sortKey="Chen, Danping" sort="Chen, Danping" uniqKey="Chen D" first="Danping" last="Chen">Danping Chen</name><affiliation><mods:affiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</mods:affiliation></affiliation></author><author><name sortKey="Zeng, Huidan" sort="Zeng, Huidan" uniqKey="Zeng H" first="Huidan" last="Zeng">Huidan Zeng</name><affiliation><mods:affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</mods:affiliation></affiliation></author><author><name sortKey="Chen, Guorong" sort="Chen, Guorong" uniqKey="Chen G" first="Guorong" last="Chen">Guorong Chen</name><affiliation><mods:affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</mods:affiliation></affiliation><affiliation><mods:affiliation>E-mail: grchen@ecust.edu.cn</mods:affiliation></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:28953E07351D183874CA1B6A20758E6B2D67E41C</idno><date when="2009" year="2009">2009</date><idno type="doi">10.1111/j.1551-2916.2009.03322.x</idno><idno type="url">https://api.istex.fr/document/28953E07351D183874CA1B6A20758E6B2D67E41C/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000904</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000904</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main">Broadband Near‐IR Emission in Tm/Er‐Codoped GeS<hi rend="subscript">2</hi>–In<hi rend="subscript">2</hi>S<hi rend="subscript">3</hi>‐Based Chalcohalide Glasses</title><author><name sortKey="Xu, Yinsheng" sort="Xu, Yinsheng" uniqKey="Xu Y" first="Yinsheng" last="Xu">Yinsheng Xu</name><affiliation><mods:affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</mods:affiliation></affiliation></author><author><name sortKey="Zhang, Qiang" sort="Zhang, Qiang" uniqKey="Zhang Q" first="Qiang" last="Zhang">Qiang Zhang</name><affiliation><mods:affiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</mods:affiliation></affiliation><affiliation><mods:affiliation>Graduate School of the Chinese Academy of Sciences, Beijing 100039, China</mods:affiliation></affiliation></author><author><name sortKey="Shen, Ce" sort="Shen, Ce" uniqKey="Shen C" first="Ce" last="Shen">Ce Shen</name><affiliation><mods:affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</mods:affiliation></affiliation></author><author><name sortKey="Chen, Danping" sort="Chen, Danping" uniqKey="Chen D" first="Danping" last="Chen">Danping Chen</name><affiliation><mods:affiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</mods:affiliation></affiliation></author><author><name sortKey="Zeng, Huidan" sort="Zeng, Huidan" uniqKey="Zeng H" first="Huidan" last="Zeng">Huidan Zeng</name><affiliation><mods:affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</mods:affiliation></affiliation></author><author><name sortKey="Chen, Guorong" sort="Chen, Guorong" uniqKey="Chen G" first="Guorong" last="Chen">Guorong Chen</name><affiliation><mods:affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</mods:affiliation></affiliation><affiliation><mods:affiliation>E-mail: grchen@ecust.edu.cn</mods:affiliation></affiliation></author></analytic><monogr></monogr><series><title level="j" type="main">Journal of the American Ceramic Society</title><title level="j" type="alt">JOURNAL OF AMERICAN CERAMIC SOCIETY</title><idno type="ISSN">0002-7820</idno><idno type="eISSN">1551-2916</idno><imprint><biblScope unit="vol">92</biblScope><biblScope unit="issue">12</biblScope><biblScope unit="page" from="3088">3088</biblScope><biblScope unit="page" to="3091">3091</biblScope><biblScope unit="page-count">4</biblScope><publisher>Blackwell Publishing Inc</publisher><pubPlace>Malden, USA</pubPlace><date type="published" when="2009-12">2009-12</date></imprint><idno type="ISSN">0002-7820</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0002-7820</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Broadband</term><term>Broadband emission</term><term>Chalcohalide</term><term>Chalcohalide glasses</term><term>Chen</term><term>Chinese academy</term><term>Emission intensity</term><term>Emission properties</term><term>Emission spectra</term><term>Glassy system</term><term>Halogen</term><term>Halogen atoms</term><term>Local structure</term><term>Phys</term><term>Solid state commun</term><term>Tetrahedra units</term><term>Thulium ions</term><term>Upconversion luminescence</term><term>Zhang</term></keywords><keywords scheme="Teeft" xml:lang="en"><term>Broadband</term><term>Broadband emission</term><term>Chalcohalide</term><term>Chalcohalide glasses</term><term>Chen</term><term>Chinese academy</term><term>Emission intensity</term><term>Emission properties</term><term>Emission spectra</term><term>Glassy system</term><term>Halogen</term><term>Halogen atoms</term><term>Local structure</term><term>Phys</term><term>Solid state commun</term><term>Tetrahedra units</term><term>Thulium ions</term><term>Upconversion luminescence</term><term>Zhang</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract">The near IR emission spectra of Tm/Er‐codoped GeS2–In2S3‐based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full‐width at half‐maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3‐codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.</div></front></TEI><istex><corpusName>wiley</corpusName><keywords><teeft><json:string>chalcohalide</json:string><json:string>halogen</json:string><json:string>emission spectra</json:string><json:string>broadband</json:string><json:string>chalcohalide glasses</json:string><json:string>phys</json:string><json:string>zhang</json:string><json:string>halogen atoms</json:string><json:string>emission intensity</json:string><json:string>broadband emission</json:string><json:string>chinese academy</json:string><json:string>emission properties</json:string><json:string>tetrahedra units</json:string><json:string>solid state commun</json:string><json:string>glassy system</json:string><json:string>upconversion luminescence</json:string><json:string>thulium ions</json:string><json:string>local structure</json:string><json:string>chen</json:string></teeft></keywords><author><json:item><name>Yinsheng Xu</name><affiliations><json:string>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</json:string></affiliations></json:item><json:item><name>Qiang Zhang</name><affiliations><json:string>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</json:string><json:string>Graduate School of the Chinese Academy of Sciences, Beijing 100039, China</json:string></affiliations></json:item><json:item><name>Ce Shen</name><affiliations><json:string>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</json:string></affiliations></json:item><json:item><name>Danping Chen</name><affiliations><json:string>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</json:string></affiliations></json:item><json:item><name>Huidan Zeng</name><affiliations><json:string>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</json:string></affiliations></json:item><json:item><name>Guorong Chen</name><affiliations><json:string>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</json:string><json:string>E-mail: grchen@ecust.edu.cn</json:string></affiliations></json:item></author><articleId><json:string>JACE03322</json:string></articleId><language><json:string>eng</json:string></language><originalGenre><json:string>shortCommunication</json:string></originalGenre><abstract>The near IR emission spectra of Tm/Er‐codoped GeS2–In2S3‐based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full‐width at half‐maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3‐codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.</abstract><qualityIndicators><score>3.138</score><pdfVersion>1.3</pdfVersion><pdfPageSize>593.972 x 782.986 pts</pdfPageSize><refBibsNative>true</refBibsNative><abstractCharCount>546</abstractCharCount><pdfWordCount>2214</pdfWordCount><pdfCharCount>13716</pdfCharCount><pdfPageCount>4</pdfPageCount><abstractWordCount>77</abstractWordCount></qualityIndicators><title>Broadband Near‐IR Emission in Tm/Er‐Codoped GeS2–In2S3‐Based Chalcohalide Glasses</title><genre><json:string>brief-communication</json:string></genre><host><title>Journal of the American Ceramic Society</title><language><json:string>unknown</json:string></language><doi><json:string>10.1111/(ISSN)1551-2916</json:string></doi><issn><json:string>0002-7820</json:string></issn><eissn><json:string>1551-2916</json:string></eissn><publisherId><json:string>JACE</json:string></publisherId><volume>92</volume><issue>12</issue><pages><first>3088</first><last>3091</last><total>4</total></pages><genre><json:string>journal</json:string></genre></host><categories><wos><json:string>science</json:string><json:string>materials science, ceramics</json:string></wos><scienceMetrix><json:string>applied sciences</json:string><json:string>enabling & strategic technologies</json:string><json:string>materials</json:string></scienceMetrix></categories><publicationDate>2009</publicationDate><copyrightDate>2009</copyrightDate><doi><json:string>10.1111/j.1551-2916.2009.03322.x</json:string></doi><id>28953E07351D183874CA1B6A20758E6B2D67E41C</id><score>1</score><fulltext><json:item><extension>pdf</extension><original>true</original><mimetype>application/pdf</mimetype><uri>https://api.istex.fr/document/28953E07351D183874CA1B6A20758E6B2D67E41C/fulltext/pdf</uri></json:item><json:item><extension>zip</extension><original>false</original><mimetype>application/zip</mimetype><uri>https://api.istex.fr/document/28953E07351D183874CA1B6A20758E6B2D67E41C/fulltext/zip</uri></json:item><istex:fulltextTEI uri="https://api.istex.fr/document/28953E07351D183874CA1B6A20758E6B2D67E41C/fulltext/tei"><teiHeader><fileDesc><titleStmt><title level="a" type="main">Broadband Near‐IR Emission in Tm/Er‐Codoped GeS<hi rend="subscript">2</hi>–In<hi rend="subscript">2</hi>S<hi rend="subscript">3</hi>‐Based Chalcohalide Glasses</title></titleStmt><publicationStmt><authority>ISTEX</authority><publisher>Blackwell Publishing Inc</publisher><pubPlace>Malden, USA</pubPlace><availability><licence>© 2009 The American Ceramic Society</licence></availability><date type="published" when="2009-12"></date></publicationStmt><notesStmt><note type="content-type" subtype="brief-communication" source="shortCommunication" scheme="https://content-type.data.istex.fr/ark:/67375/XTP-S9SX2MFS-0">brief-communication</note><note type="publication-type" subtype="journal" scheme="https://publication-type.data.istex.fr/ark:/67375/JMC-0GLKJH51-B">journal</note></notesStmt><sourceDesc><biblStruct type="brief-communication"><analytic><title level="a" type="main">Broadband Near‐IR Emission in Tm/Er‐Codoped GeS<hi rend="subscript">2</hi>–In<hi rend="subscript">2</hi>S<hi rend="subscript">3</hi>‐Based Chalcohalide Glasses</title><title level="a" type="short">Communications of the American Ceramic Society</title><author xml:id="author-0000"><persName><forename type="first">Yinsheng</forename><surname>Xu</surname></persName><affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China<address><country key="CN"></country></address></affiliation></author><author xml:id="author-0001"><persName><forename type="first">Qiang</forename><surname>Zhang</surname></persName><affiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China<address><country key="CN"></country></address></affiliation><affiliation>Graduate School of the Chinese Academy of Sciences, Beijing 100039, China<address><country key="CN"></country></address></affiliation></author><author xml:id="author-0002"><persName><forename type="first">Ce</forename><surname>Shen</surname></persName><affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China<address><country key="CN"></country></address></affiliation></author><author xml:id="author-0003"><persName><forename type="first">Danping</forename><surname>Chen</surname></persName><affiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China<address><country key="CN"></country></address></affiliation></author><author xml:id="author-0004"><persName><forename type="first">Huidan</forename><surname>Zeng</surname></persName><affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China<address><country key="CN"></country></address></affiliation></author><author xml:id="author-0005" role="corresp"><persName><forename type="first">Guorong</forename><surname>Chen</surname></persName><affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China<address><country key="CN"></country></address></affiliation><affiliation>†Author to whom correspondence should be addressed. e‐mail: grchen@ecust.edu.cn</affiliation></author><idno type="istex">28953E07351D183874CA1B6A20758E6B2D67E41C</idno><idno type="ark">ark:/67375/WNG-BP8P201L-T</idno><idno type="DOI">10.1111/j.1551-2916.2009.03322.x</idno><idno type="unit">JACE03322</idno><idno type="supplier">03322</idno><idno type="toTypesetVersion">file:JACE.JACE03322.pdf</idno></analytic><monogr><title level="j" type="main">Journal of the American Ceramic Society</title><title level="j" type="alt">JOURNAL OF AMERICAN CERAMIC SOCIETY</title><idno type="pISSN">0002-7820</idno><idno type="eISSN">1551-2916</idno><idno type="book-DOI">10.1111/(ISSN)1551-2916</idno><idno type="book-part-DOI">10.1111/jace.2009.92.issue-12</idno><idno type="product">JACE</idno><idno type="publisherDivision">ST</idno><imprint><biblScope unit="vol">92</biblScope><biblScope unit="issue">12</biblScope><biblScope unit="page" from="3088">3088</biblScope><biblScope unit="page" to="3091">3091</biblScope><biblScope unit="page-count">4</biblScope><publisher>Blackwell Publishing Inc</publisher><pubPlace>Malden, USA</pubPlace><date type="published" when="2009-12"></date></imprint></monogr></biblStruct></sourceDesc></fileDesc><profileDesc><abstract xml:lang="en" style="main"><p>
<hi rend="bold">The near IR emission spectra of Tm/Er‐codoped GeS<hi rend="subscript">2</hi>–In<hi rend="subscript">2</hi>S<hi rend="subscript">3</hi>‐based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full‐width at half‐maximum of ∼170 nm is recorded in a 0.5Tm<hi rend="subscript">2</hi>S<hi rend="subscript">3</hi>–0.1Er<hi rend="subscript">2</hi>S<hi rend="subscript">3</hi>‐codoped 70GeS<hi rend="subscript">2</hi>–20In<hi rend="subscript">2</hi>S<hi rend="subscript">3</hi>–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InS<hi rend="italic"><hi rend="subscript">x</hi></hi>X<hi rend="subscript">4</hi><hi rend="italic"><hi rend="subscript">−x</hi></hi>] structural units can enhance the emission intensity located at 1460 nm.</hi>
</p></abstract><textClass><keywords rend="tocHeading1"><term>Articles</term></keywords><keywords rend="tocHeading2"><term>Communications</term></keywords></textClass><langUsage><language ident="en"></language></langUsage></profileDesc></teiHeader></istex:fulltextTEI><json:item><extension>txt</extension><original>false</original><mimetype>text/plain</mimetype><uri>https://api.istex.fr/document/28953E07351D183874CA1B6A20758E6B2D67E41C/fulltext/txt</uri></json:item></fulltext><metadata><istex:metadataXml wicri:clean="Wiley, elements deleted: body"><istex:xmlDeclaration>version="1.0" encoding="UTF-8" standalone="yes"</istex:xmlDeclaration><istex:document><component version="2.0" type="serialArticle" xml:lang="en"><header><publicationMeta level="product"><publisherInfo><publisherName>Blackwell Publishing Inc</publisherName><publisherLoc>Malden, USA</publisherLoc></publisherInfo><doi origin="wiley" registered="yes">10.1111/(ISSN)1551-2916</doi><issn type="print">0002-7820</issn><issn type="electronic">1551-2916</issn><idGroup><id type="product" value="JACE"></id><id type="publisherDivision" value="ST"></id></idGroup><titleGroup><title type="main" sort="JOURNAL OF AMERICAN CERAMIC SOCIETY">Journal of the American Ceramic Society</title></titleGroup></publicationMeta><publicationMeta level="part" position="12012"><doi origin="wiley">10.1111/jace.2009.92.issue-12</doi><numberingGroup><numbering type="journalVolume" number="92">92</numbering><numbering type="journalIssue" number="12">12</numbering></numberingGroup><coverDate startDate="2009-12">December 2009</coverDate></publicationMeta><publicationMeta level="unit" type="shortCommunication" position="43" status="forIssue"><doi origin="wiley">10.1111/j.1551-2916.2009.03322.x</doi><idGroup><id type="unit" value="JACE03322"></id><id type="supplier" value="03322"></id></idGroup><countGroup><count type="pageTotal" number="4"></count></countGroup><titleGroup><title type="tocHeading1">Articles</title><title type="tocHeading2"><i>Communications</i></title></titleGroup><copyright>© 2009 The American Ceramic Society</copyright><eventGroup><event type="firstOnline" date="2009-09-28"></event><event type="publishedOnlineFinalForm" date="2009-11-23"></event><event type="xmlConverted" agent="Converter:BPG_TO_WML3G version:2.3.6 mode:FullText source:FullText result:FullText" date="2010-04-20"></event><event type="xmlConverted" agent="Converter:WILEY_ML3G_TO_WILEY_ML3GV2 version:4.0.1" date="2014-03-19"></event><event type="xmlConverted" agent="Converter:WML3G_To_WML3G version:4.1.7 mode:FullText,remove_FC" date="2014-10-30"></event></eventGroup><numberingGroup><numbering type="pageFirst" number="3088">3088</numbering><numbering type="pageLast" number="3091">3091</numbering></numberingGroup><correspondenceTo><sup>†</sup>Author to whom correspondence should be addressed. e‐mail: <email normalForm="grchen@ecust.edu.cn">grchen@ecust.edu.cn</email></correspondenceTo><linkGroup><link type="toTypesetVersion" href="file:JACE.JACE03322.pdf"></link></linkGroup></publicationMeta><contentMeta><unparsedEditorialHistory>Manuscript No. 26204. Received April 26, 2009; approved June 29, 2009.</unparsedEditorialHistory><countGroup><count type="figureTotal" number="5"></count><count type="tableTotal" number="0"></count><count type="formulaTotal" number="0"></count><count type="referenceTotal" number="20"></count><count type="wordTotal" number="2986"></count><count type="linksCrossRef" number="31"></count></countGroup><titleGroup><title type="main">Broadband Near‐IR Emission in Tm/Er‐Codoped GeS<sub>2</sub>–In<sub>2</sub>S<sub>3</sub>‐Based Chalcohalide Glasses</title><title type="short">Communications of the American Ceramic Society</title></titleGroup><creators><creator creatorRole="author" xml:id="cr1" affiliationRef="#a1"><personName><givenNames>Yinsheng</givenNames><familyName>Xu</familyName></personName></creator><creator creatorRole="author" xml:id="cr2" affiliationRef="#a2 #a3"><personName><givenNames>Qiang</givenNames><familyName>Zhang</familyName></personName></creator><creator creatorRole="author" xml:id="cr3" affiliationRef="#a1"><personName><givenNames>Ce</givenNames><familyName>Shen</familyName></personName></creator><creator creatorRole="author" xml:id="cr4" affiliationRef="#a2"><personName><givenNames>Danping</givenNames><familyName>Chen</familyName></personName></creator><creator creatorRole="author" xml:id="cr5" affiliationRef="#a1"><personName><givenNames>Huidan</givenNames><familyName>Zeng</familyName></personName></creator><creator creatorRole="author" xml:id="cr6" affiliationRef="#a1" corresponding="yes"><personName><givenNames>Guorong</givenNames><familyName>Chen</familyName></personName></creator></creators><affiliationGroup><affiliation xml:id="a1" countryCode="CN"><unparsedAffiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</unparsedAffiliation></affiliation><affiliation xml:id="a2" countryCode="CN"><unparsedAffiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</unparsedAffiliation></affiliation><affiliation xml:id="a3" countryCode="CN"><unparsedAffiliation>Graduate School of the Chinese Academy of Sciences, Beijing 100039, China</unparsedAffiliation></affiliation></affiliationGroup><abstractGroup><abstract type="main" xml:lang="en"><p> <b>The near IR emission spectra of Tm/Er‐codoped GeS<sub>2</sub>–In<sub>2</sub>S<sub>3</sub>‐based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full‐width at half‐maximum of ∼170 nm is recorded in a 0.5Tm<sub>2</sub>S<sub>3</sub>–0.1Er<sub>2</sub>S<sub>3</sub>‐codoped 70GeS<sub>2</sub>–20In<sub>2</sub>S<sub>3</sub>–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InS<i><sub>x</sub></i>X<sub>4</sub><i><sub>−x</sub></i>] structural units can enhance the emission intensity located at 1460 nm.</b> </p></abstract></abstractGroup></contentMeta><noteGroup><note xml:id="fn1" numbered="no"><p>A. Bruce—contributing editor</p></note><note xml:id="fn2" numbered="no"><p>This work is financially supported by the National Natural Science Foundation of China (NSFC 60578042, 50702021), and Research Funds for Young Teachers for the Doctoral Program by Ministry of Education of China (20070251013) and Shanghai Leading Academic Discipline Project, Project Number B502.</p></note></noteGroup></header></component></istex:document></istex:metadataXml><mods version="3.6"><titleInfo lang="en"><title>Broadband Near‐IR Emission in Tm/Er‐Codoped GeS2–In2S3‐Based Chalcohalide Glasses</title></titleInfo><titleInfo type="abbreviated" lang="en"><title>Communications of the American Ceramic Society</title></titleInfo><titleInfo type="alternative" contentType="CDATA" lang="en"><title>Broadband Near‐IR Emission in Tm/Er‐Codoped GeS2–In2S3‐Based Chalcohalide Glasses</title></titleInfo><name type="personal"><namePart type="given">Yinsheng</namePart><namePart type="family">Xu</namePart><affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Qiang</namePart><namePart type="family">Zhang</namePart><affiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</affiliation><affiliation>Graduate School of the Chinese Academy of Sciences, Beijing 100039, China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Ce</namePart><namePart type="family">Shen</namePart><affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Danping</namePart><namePart type="family">Chen</namePart><affiliation>Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Huidan</namePart><namePart type="family">Zeng</namePart><affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</affiliation><role><roleTerm type="text">author</roleTerm></role></name><name type="personal"><namePart type="given">Guorong</namePart><namePart type="family">Chen</namePart><affiliation>Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China</affiliation><affiliation>E-mail: grchen@ecust.edu.cn</affiliation><role><roleTerm type="text">author</roleTerm></role></name><typeOfResource>text</typeOfResource><genre type="brief-communication" displayLabel="shortCommunication" authority="ISTEX" authorityURI="https://content-type.data.istex.fr" valueURI="https://content-type.data.istex.fr/ark:/67375/XTP-S9SX2MFS-0">brief-communication</genre><originInfo><publisher>Blackwell Publishing Inc</publisher><place><placeTerm type="text">Malden, USA</placeTerm></place><dateIssued encoding="w3cdtf">2009-12</dateIssued><edition>Manuscript No. 26204. Received April 26, 2009; approved June 29, 2009.</edition><copyrightDate encoding="w3cdtf">2009</copyrightDate></originInfo><language><languageTerm type="code" authority="rfc3066">en</languageTerm><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><extent unit="figures">5</extent><extent unit="tables">0</extent><extent unit="formulas">0</extent><extent unit="references">20</extent><extent unit="linksCrossRef">31</extent><extent unit="words">2986</extent></physicalDescription><abstract>The near IR emission spectra of Tm/Er‐codoped GeS2–In2S3‐based chalcohalide glasses are studied with an 808 nm laser as excitation source. A broad emission with a full‐width at half‐maximum of ∼170 nm is recorded in a 0.5Tm2S3–0.1Er2S3‐codoped 70GeS2–20In2S3–10CsBr (in mol%) glass. The luminescence mechanisms are discussed with different CsI concentration, different halogen atoms, and different In content. These results suggest that both halogen (X) atoms and [InSxX4−x] structural units can enhance the emission intensity located at 1460 nm.</abstract><relatedItem type="host"><titleInfo><title>Journal of the American Ceramic Society</title></titleInfo><genre type="journal" authority="ISTEX" authorityURI="https://publication-type.data.istex.fr" valueURI="https://publication-type.data.istex.fr/ark:/67375/JMC-0GLKJH51-B">journal</genre><identifier type="ISSN">0002-7820</identifier><identifier type="eISSN">1551-2916</identifier><identifier type="DOI">10.1111/(ISSN)1551-2916</identifier><identifier type="PublisherID">JACE</identifier><part><date>2009</date><detail type="volume"><caption>vol.</caption><number>92</number></detail><detail type="issue"><caption>no.</caption><number>12</number></detail><extent unit="pages"><start>3088</start><end>3091</end><total>4</total></extent></part></relatedItem><identifier type="istex">28953E07351D183874CA1B6A20758E6B2D67E41C</identifier><identifier type="ark">ark:/67375/WNG-BP8P201L-T</identifier><identifier type="DOI">10.1111/j.1551-2916.2009.03322.x</identifier><identifier type="ArticleID">JACE03322</identifier><accessCondition type="use and reproduction" contentType="copyright">© 2009 The American Ceramic Society</accessCondition><recordInfo><recordContentSource authority="ISTEX" authorityURI="https://loaded-corpus.data.istex.fr" valueURI="https://loaded-corpus.data.istex.fr/ark:/67375/XBH-L0C46X92-X">wiley</recordContentSource><recordOrigin>Blackwell Publishing Inc</recordOrigin></recordInfo></mods><json:item><extension>json</extension><original>false</original><mimetype>application/json</mimetype><uri>https://api.istex.fr/document/28953E07351D183874CA1B6A20758E6B2D67E41C/metadata/json</uri></json:item></metadata><serie></serie></istex></record>Pour manipuler ce document sous Unix (Dilib)
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