Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact
Identifieur interne :
000065 ( PascalFrancis/Corpus );
précédent :
000064;
suivant :
000066
Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact
Auteurs : Khalid Hoummada ;
Gamra Tellouche ;
Ivan Blum ;
Alain Portavoce ;
Marion Descoins ;
Dominique MangelinckSource :
-
Microelectronic engineering [ 0167-9317 ] ; 2013.
RBID : Pascal:13-0188468
Descripteurs français
- Pascal (Inist)
- Décoration dislocation,
Agrégation,
Classification automatique,
Addition arsenic,
Microscopie électronique transmission,
Sonde atomique,
Tomographie,
In situ,
Diffraction RX,
Boucle dislocation,
Pastille électronique,
Recristallisation,
Traitement thermique,
Distribution concentration,
Profil profondeur,
Dislocation coin,
Phénomène transitoire,
Implantation,
Diffusion(transport),
Ségrégation,
Nickel,
Silicium,
Arsenic,
Siliciure de nickel,
Couche mince,
Interface,
Matériau dopé,
6630P,
66.
English descriptors
- KwdEn :
- Aggregation,
Arsenic,
Arsenic additions,
Atom probe,
Automatic classification,
Concentration distribution,
Depth profiles,
Diffusion,
Dislocation décoration,
Dislocation loops,
Doped materials,
Edge dislocations,
Heat treatments,
Implantation,
In situ,
Interfaces,
Nickel,
Nickel silicide,
Recrystallization,
Segregation,
Silicon,
Thin films,
Tomography,
Transients,
Transmission electron microscopy,
Wafers,
XRD.
Abstract
The redistribution of arsenic and nickel during the reaction of Ni thin films with arsenic doped Si(100) substrates is studied by a combination of transmission electron microscopy (TEM), atom-probe tomography (APT) and in situ X-ray diffraction (XRD). Ni was observed at the edges of a pseudo-hexagonal dislocation loop within As+-implanted (001)Si wafers, after recrystallisation of preamorphised Si and deposition of 100 nm Ni. After an additional heat treatment at 280 °C, the same concentration profiles were found with a maximum of ≃10% Ni at the edges of the dislocation loops, suggesting Cottrell atmospheres. In situ XRD showed the formation of a transient phase forming isolated grains at the δ-Ni2Si/Si interface. Clusters containing 10% of As are present only in the transient phase. The presence of As clusters in silicide used for contact on devices might have significant influences on devices properties.
Notice en format standard (ISO 2709)
Pour connaître la documentation sur le format Inist Standard.
| pA |
| A01 | 01 | 1 | | @0 0167-9317 |
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| A02 | 01 | | | @0 MIENEF |
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| A03 | | 1 | | @0 Microelectron. eng. |
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| A05 | | | | @2 107 |
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| A08 | 01 | 1 | ENG | @1 Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact |
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| A11 | 01 | 1 | | @1 HOUMMADA (Khalid) |
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| A11 | 02 | 1 | | @1 TELLOUCHE (Gamra) |
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| A11 | 03 | 1 | | @1 BLUM (Ivan) |
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| A11 | 04 | 1 | | @1 PORTAVOCE (Alain) |
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| A11 | 05 | 1 | | @1 DESCOINS (Marion) |
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| A11 | 06 | 1 | | @1 MANGELINCK (Dominique) |
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| A14 | 01 | | | @1 Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142 @2 13397 Marseille @3 FRA @Z 1 aut. @Z 3 aut. @Z 4 aut. @Z 5 aut. @Z 6 aut. |
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| A14 | 02 | | | @1 Département de Physique, faculté des sciences, Université de M'sila @2 M'sila 28000 @3 DZA @Z 2 aut. |
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| A20 | | | | @1 184-189 |
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| A21 | | | | @1 2013 |
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| A23 | 01 | | | @0 ENG |
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| A43 | 01 | | | @1 INIST @2 20003 @5 354000173393270330 |
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| A44 | | | | @0 0000 @1 © 2013 INIST-CNRS. All rights reserved. |
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| A45 | | | | @0 27 ref. |
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| A47 | 01 | 1 | | @0 13-0188468 |
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| A60 | | | | @1 P @2 C |
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| A61 | | | | @0 A |
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| A64 | 01 | 1 | | @0 Microelectronic engineering |
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| A66 | 01 | | | @0 NLD |
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| C01 | 01 | | ENG | @0 The redistribution of arsenic and nickel during the reaction of Ni thin films with arsenic doped Si(100) substrates is studied by a combination of transmission electron microscopy (TEM), atom-probe tomography (APT) and in situ X-ray diffraction (XRD). Ni was observed at the edges of a pseudo-hexagonal dislocation loop within As+-implanted (001)Si wafers, after recrystallisation of preamorphised Si and deposition of 100 nm Ni. After an additional heat treatment at 280 °C, the same concentration profiles were found with a maximum of ≃10% Ni at the edges of the dislocation loops, suggesting Cottrell atmospheres. In situ XRD showed the formation of a transient phase forming isolated grains at the δ-Ni2Si/Si interface. Clusters containing 10% of As are present only in the transient phase. The presence of As clusters in silicide used for contact on devices might have significant influences on devices properties. |
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| C02 | 01 | 3 | | @0 001B80A40E |
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| C02 | 02 | 3 | | @0 001B60F30P |
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| C03 | 01 | X | FRE | @0 Décoration dislocation @5 01 |
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| C03 | 01 | X | ENG | @0 Dislocation décoration @5 01 |
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| C03 | 01 | X | SPA | @0 Decoración dislocación @5 01 |
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| C03 | 02 | 3 | FRE | @0 Agrégation @5 02 |
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| C03 | 02 | 3 | ENG | @0 Aggregation @5 02 |
|---|
| C03 | 03 | X | FRE | @0 Classification automatique @5 03 |
|---|
| C03 | 03 | X | ENG | @0 Automatic classification @5 03 |
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| C03 | 03 | X | SPA | @0 Clasificación automática @5 03 |
|---|
| C03 | 04 | 3 | FRE | @0 Addition arsenic @5 04 |
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| C03 | 04 | 3 | ENG | @0 Arsenic additions @5 04 |
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| C03 | 05 | 3 | FRE | @0 Microscopie électronique transmission @5 05 |
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| C03 | 05 | 3 | ENG | @0 Transmission electron microscopy @5 05 |
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| C03 | 06 | X | FRE | @0 Sonde atomique @5 06 |
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| C03 | 06 | X | ENG | @0 Atom probe @5 06 |
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| C03 | 06 | X | SPA | @0 Sonda atómica @5 06 |
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| C03 | 07 | 3 | FRE | @0 Tomographie @5 07 |
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| C03 | 07 | 3 | ENG | @0 Tomography @5 07 |
|---|
| C03 | 08 | X | FRE | @0 In situ @5 08 |
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| C03 | 08 | X | ENG | @0 In situ @5 08 |
|---|
| C03 | 08 | X | SPA | @0 In situ @5 08 |
|---|
| C03 | 09 | 3 | FRE | @0 Diffraction RX @5 09 |
|---|
| C03 | 09 | 3 | ENG | @0 XRD @5 09 |
|---|
| C03 | 10 | 3 | FRE | @0 Boucle dislocation @5 10 |
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| C03 | 10 | 3 | ENG | @0 Dislocation loops @5 10 |
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| C03 | 11 | 3 | FRE | @0 Pastille électronique @5 11 |
|---|
| C03 | 11 | 3 | ENG | @0 Wafers @5 11 |
|---|
| C03 | 12 | 3 | FRE | @0 Recristallisation @5 12 |
|---|
| C03 | 12 | 3 | ENG | @0 Recrystallization @5 12 |
|---|
| C03 | 13 | 3 | FRE | @0 Traitement thermique @5 13 |
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| C03 | 13 | 3 | ENG | @0 Heat treatments @5 13 |
|---|
| C03 | 14 | X | FRE | @0 Distribution concentration @5 14 |
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| C03 | 14 | X | ENG | @0 Concentration distribution @5 14 |
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| C03 | 14 | X | SPA | @0 Distribución concentración @5 14 |
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| C03 | 15 | 3 | FRE | @0 Profil profondeur @5 15 |
|---|
| C03 | 15 | 3 | ENG | @0 Depth profiles @5 15 |
|---|
| C03 | 16 | 3 | FRE | @0 Dislocation coin @5 16 |
|---|
| C03 | 16 | 3 | ENG | @0 Edge dislocations @5 16 |
|---|
| C03 | 17 | 3 | FRE | @0 Phénomène transitoire @5 17 |
|---|
| C03 | 17 | 3 | ENG | @0 Transients @5 17 |
|---|
| C03 | 18 | X | FRE | @0 Implantation @5 18 |
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| C03 | 18 | X | ENG | @0 Implantation @5 18 |
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| C03 | 18 | X | SPA | @0 Implantación @5 18 |
|---|
| C03 | 19 | 3 | FRE | @0 Diffusion(transport) @5 19 |
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| C03 | 19 | 3 | ENG | @0 Diffusion @5 19 |
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| C03 | 20 | 3 | FRE | @0 Ségrégation @5 20 |
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| C03 | 20 | 3 | ENG | @0 Segregation @5 20 |
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| C03 | 21 | 3 | FRE | @0 Nickel @2 NC @5 22 |
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| C03 | 21 | 3 | ENG | @0 Nickel @2 NC @5 22 |
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| C03 | 22 | 3 | FRE | @0 Silicium @2 NC @5 23 |
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| C03 | 22 | 3 | ENG | @0 Silicon @2 NC @5 23 |
|---|
| C03 | 23 | 3 | FRE | @0 Arsenic @2 NC @5 24 |
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| C03 | 23 | 3 | ENG | @0 Arsenic @2 NC @5 24 |
|---|
| C03 | 24 | X | FRE | @0 Siliciure de nickel @5 25 |
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| C03 | 24 | X | ENG | @0 Nickel silicide @5 25 |
|---|
| C03 | 24 | X | SPA | @0 Níquel siliciuro @5 25 |
|---|
| C03 | 25 | 3 | FRE | @0 Couche mince @5 26 |
|---|
| C03 | 25 | 3 | ENG | @0 Thin films @5 26 |
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| C03 | 26 | 3 | FRE | @0 Interface @5 27 |
|---|
| C03 | 26 | 3 | ENG | @0 Interfaces @5 27 |
|---|
| C03 | 27 | 3 | FRE | @0 Matériau dopé @5 46 |
|---|
| C03 | 27 | 3 | ENG | @0 Doped materials @5 46 |
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| C03 | 28 | 3 | FRE | @0 6630P @4 INC @5 56 |
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| C03 | 29 | 3 | FRE | @0 66 @4 INC @5 57 |
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| N21 | | | | @1 168 |
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| N44 | 01 | | | @1 OTO |
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| N82 | | | | @1 OTO |
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|
|---|
| pR |
| A30 | 01 | 1 | ENG | @1 Materials for Advanced Metallization MAM 2012. Workshop @3 Grenoble FRA @4 2012-03-11 |
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|
|---|
Format Inist (serveur)
| NO : | PASCAL 13-0188468 INIST |
|---|
| ET : | Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact |
|---|
| AU : | HOUMMADA (Khalid); TELLOUCHE (Gamra); BLUM (Ivan); PORTAVOCE (Alain); DESCOINS (Marion); MANGELINCK (Dominique) |
|---|
| AF : | Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142/13397 Marseille/France (1 aut., 3 aut., 4 aut., 5 aut., 6 aut.); Département de Physique, faculté des sciences, Université de M'sila/M'sila 28000/Algérie (2 aut.) |
|---|
| DT : | Publication en série; Congrès; Niveau analytique |
|---|
| SO : | Microelectronic engineering; ISSN 0167-9317; Coden MIENEF; Pays-Bas; Da. 2013; Vol. 107; Pp. 184-189; Bibl. 27 ref. |
|---|
| LA : | Anglais |
|---|
| EA : | The redistribution of arsenic and nickel during the reaction of Ni thin films with arsenic doped Si(100) substrates is studied by a combination of transmission electron microscopy (TEM), atom-probe tomography (APT) and in situ X-ray diffraction (XRD). Ni was observed at the edges of a pseudo-hexagonal dislocation loop within As+-implanted (001)Si wafers, after recrystallisation of preamorphised Si and deposition of 100 nm Ni. After an additional heat treatment at 280 °C, the same concentration profiles were found with a maximum of ≃10% Ni at the edges of the dislocation loops, suggesting Cottrell atmospheres. In situ XRD showed the formation of a transient phase forming isolated grains at the δ-Ni2Si/Si interface. Clusters containing 10% of As are present only in the transient phase. The presence of As clusters in silicide used for contact on devices might have significant influences on devices properties. |
|---|
| CC : | 001B80A40E; 001B60F30P |
|---|
| FD : | Décoration dislocation; Agrégation; Classification automatique; Addition arsenic; Microscopie électronique transmission; Sonde atomique; Tomographie; In situ; Diffraction RX; Boucle dislocation; Pastille électronique; Recristallisation; Traitement thermique; Distribution concentration; Profil profondeur; Dislocation coin; Phénomène transitoire; Implantation; Diffusion(transport); Ségrégation; Nickel; Silicium; Arsenic; Siliciure de nickel; Couche mince; Interface; Matériau dopé; 6630P; 66 |
|---|
| ED : | Dislocation décoration; Aggregation; Automatic classification; Arsenic additions; Transmission electron microscopy; Atom probe; Tomography; In situ; XRD; Dislocation loops; Wafers; Recrystallization; Heat treatments; Concentration distribution; Depth profiles; Edge dislocations; Transients; Implantation; Diffusion; Segregation; Nickel; Silicon; Arsenic; Nickel silicide; Thin films; Interfaces; Doped materials |
|---|
| SD : | Decoración dislocación; Clasificación automática; Sonda atómica; In situ; Distribución concentración; Implantación; Níquel siliciuro |
|---|
| LO : | INIST-20003.354000173393270330 |
|---|
| ID : | 13-0188468 |
|---|
Links to Exploration step
Pascal:13-0188468
Le document en format XML
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</publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Direct observation of Ni decorated dislocation loops within As<sup>+</sup>
-implanted silicon and arsenic clustering in Ni silicide contact</title><author><name sortKey="Hoummada, Khalid" sort="Hoummada, Khalid" uniqKey="Hoummada K" first="Khalid" last="Hoummada">Khalid Hoummada</name>
<affiliation><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<s2>M'sila 28000</s2>
<s3>DZA</s3>
<sZ>2 aut.</sZ>
</inist:fA14><author><name sortKey="Blum, Ivan" sort="Blum, Ivan" uniqKey="Blum I" first="Ivan" last="Blum">Ivan Blum</name>
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<sZ>6 aut.</sZ>
</inist:fA14><author><name sortKey="Portavoce, Alain" sort="Portavoce, Alain" uniqKey="Portavoce A" first="Alain" last="Portavoce">Alain Portavoce</name>
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<s2>13397 Marseille</s2>
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<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14><author><name sortKey="Mangelinck, Dominique" sort="Mangelinck, Dominique" uniqKey="Mangelinck D" first="Dominique" last="Mangelinck">Dominique Mangelinck</name>
<affiliation><inist:fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14><series><title level="j" type="main">Microelectronic engineering</title>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<idno type="ISSN">0167-9317</idno>
<imprint><date when="2013">2013</date>
</imprint><seriesStmt><title level="j" type="main">Microelectronic engineering</title>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<idno type="ISSN">0167-9317</idno>
</seriesStmt><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aggregation</term>
<term>Arsenic</term>
<term>Arsenic additions</term>
<term>Atom probe</term>
<term>Automatic classification</term>
<term>Concentration distribution</term>
<term>Depth profiles</term>
<term>Diffusion</term>
<term>Dislocation décoration</term>
<term>Dislocation loops</term>
<term>Doped materials</term>
<term>Edge dislocations</term>
<term>Heat treatments</term>
<term>Implantation</term>
<term>In situ</term>
<term>Interfaces</term>
<term>Nickel</term>
<term>Nickel silicide</term>
<term>Recrystallization</term>
<term>Segregation</term>
<term>Silicon</term>
<term>Thin films</term>
<term>Tomography</term>
<term>Transients</term>
<term>Transmission electron microscopy</term>
<term>Wafers</term>
<term>XRD</term>
</keywords><keywords scheme="Pascal" xml:lang="fr"><term>Décoration dislocation</term>
<term>Agrégation</term>
<term>Classification automatique</term>
<term>Addition arsenic</term>
<term>Microscopie électronique transmission</term>
<term>Sonde atomique</term>
<term>Tomographie</term>
<term>In situ</term>
<term>Diffraction RX</term>
<term>Boucle dislocation</term>
<term>Pastille électronique</term>
<term>Recristallisation</term>
<term>Traitement thermique</term>
<term>Distribution concentration</term>
<term>Profil profondeur</term>
<term>Dislocation coin</term>
<term>Phénomène transitoire</term>
<term>Implantation</term>
<term>Diffusion(transport)</term>
<term>Ségrégation</term>
<term>Nickel</term>
<term>Silicium</term>
<term>Arsenic</term>
<term>Siliciure de nickel</term>
<term>Couche mince</term>
<term>Interface</term>
<term>Matériau dopé</term>
<term>6630P</term>
<term>66</term>
</keywords><front><div type="abstract" xml:lang="en">The redistribution of arsenic and nickel during the reaction of Ni thin films with arsenic doped Si(100) substrates is studied by a combination of transmission electron microscopy (TEM), atom-probe tomography (APT) and in situ X-ray diffraction (XRD). Ni was observed at the edges of a pseudo-hexagonal dislocation loop within As<sup>+</sup>
-implanted (001)Si wafers, after recrystallisation of preamorphised Si and deposition of 100 nm Ni. After an additional heat treatment at 280 °C, the same concentration profiles were found with a maximum of ≃10% Ni at the edges of the dislocation loops, suggesting Cottrell atmospheres. In situ XRD showed the formation of a transient phase forming isolated grains at the δ-Ni<sub>2</sub>
Si/Si interface. Clusters containing 10% of As are present only in the transient phase. The presence of As clusters in silicide used for contact on devices might have significant influences on devices properties.</div><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0>
</fA01><fA02 i1="01"><s0>MIENEF</s0>
</fA02><fA03 i2="1"><s0>Microelectron. eng.</s0>
</fA03><fA05><s2>107</s2>
</fA05><fA08 i1="01" i2="1" l="ENG"><s1>Direct observation of Ni decorated dislocation loops within As<sup>+</sup>
-implanted silicon and arsenic clustering in Ni silicide contact</s1><fA11 i1="01" i2="1"><s1>HOUMMADA (Khalid)</s1>
</fA11><fA11 i1="02" i2="1"><s1>TELLOUCHE (Gamra)</s1>
</fA11><fA11 i1="03" i2="1"><s1>BLUM (Ivan)</s1>
</fA11><fA11 i1="04" i2="1"><s1>PORTAVOCE (Alain)</s1>
</fA11><fA11 i1="05" i2="1"><s1>DESCOINS (Marion)</s1>
</fA11><fA11 i1="06" i2="1"><s1>MANGELINCK (Dominique)</s1>
</fA11><fA14 i1="01"><s1>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142</s1>
<s2>13397 Marseille</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14><fA14 i1="02"><s1>Département de Physique, faculté des sciences, Université de M'sila</s1>
<s2>M'sila 28000</s2>
<s3>DZA</s3>
<sZ>2 aut.</sZ>
</fA14><fA20><s1>184-189</s1>
</fA20><fA21><s1>2013</s1>
</fA21><fA23 i1="01"><s0>ENG</s0>
</fA23><fA43 i1="01"><s1>INIST</s1>
<s2>20003</s2>
<s5>354000173393270330</s5>
</fA43><fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44><fA45><s0>27 ref.</s0>
</fA45><fA47 i1="01" i2="1"><s0>13-0188468</s0>
</fA47><fA60><s1>P</s1>
<s2>C</s2>
</fA60><fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0>
</fA64><fA66 i1="01"><s0>NLD</s0>
</fA66><fC01 i1="01" l="ENG"><s0>The redistribution of arsenic and nickel during the reaction of Ni thin films with arsenic doped Si(100) substrates is studied by a combination of transmission electron microscopy (TEM), atom-probe tomography (APT) and in situ X-ray diffraction (XRD). Ni was observed at the edges of a pseudo-hexagonal dislocation loop within As<sup>+</sup>
-implanted (001)Si wafers, after recrystallisation of preamorphised Si and deposition of 100 nm Ni. After an additional heat treatment at 280 °C, the same concentration profiles were found with a maximum of ≃10% Ni at the edges of the dislocation loops, suggesting Cottrell atmospheres. In situ XRD showed the formation of a transient phase forming isolated grains at the δ-Ni<sub>2</sub>
Si/Si interface. Clusters containing 10% of As are present only in the transient phase. The presence of As clusters in silicide used for contact on devices might have significant influences on devices properties.</s0><fC02 i1="01" i2="3"><s0>001B80A40E</s0>
</fC02><fC02 i1="02" i2="3"><s0>001B60F30P</s0>
</fC02><fC03 i1="01" i2="X" l="FRE"><s0>Décoration dislocation</s0>
<s5>01</s5>
</fC03><fC03 i1="01" i2="X" l="ENG"><s0>Dislocation décoration</s0>
<s5>01</s5>
</fC03><fC03 i1="01" i2="X" l="SPA"><s0>Decoración dislocación</s0>
<s5>01</s5>
</fC03><fC03 i1="02" i2="3" l="FRE"><s0>Agrégation</s0>
<s5>02</s5>
</fC03><fC03 i1="02" i2="3" l="ENG"><s0>Aggregation</s0>
<s5>02</s5>
</fC03><fC03 i1="03" i2="X" l="FRE"><s0>Classification automatique</s0>
<s5>03</s5>
</fC03><fC03 i1="03" i2="X" l="ENG"><s0>Automatic classification</s0>
<s5>03</s5>
</fC03><fC03 i1="03" i2="X" l="SPA"><s0>Clasificación automática</s0>
<s5>03</s5>
</fC03><fC03 i1="04" i2="3" l="FRE"><s0>Addition arsenic</s0>
<s5>04</s5>
</fC03><fC03 i1="04" i2="3" l="ENG"><s0>Arsenic additions</s0>
<s5>04</s5>
</fC03><fC03 i1="05" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>05</s5>
</fC03><fC03 i1="05" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>05</s5>
</fC03><fC03 i1="06" i2="X" l="FRE"><s0>Sonde atomique</s0>
<s5>06</s5>
</fC03><fC03 i1="06" i2="X" l="ENG"><s0>Atom probe</s0>
<s5>06</s5>
</fC03><fC03 i1="06" i2="X" l="SPA"><s0>Sonda atómica</s0>
<s5>06</s5>
</fC03><fC03 i1="07" i2="3" l="FRE"><s0>Tomographie</s0>
<s5>07</s5>
</fC03><fC03 i1="07" i2="3" l="ENG"><s0>Tomography</s0>
<s5>07</s5>
</fC03><fC03 i1="08" i2="X" l="FRE"><s0>In situ</s0>
<s5>08</s5>
</fC03><fC03 i1="08" i2="X" l="ENG"><s0>In situ</s0>
<s5>08</s5>
</fC03><fC03 i1="08" i2="X" l="SPA"><s0>In situ</s0>
<s5>08</s5>
</fC03><fC03 i1="09" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>09</s5>
</fC03><fC03 i1="09" i2="3" l="ENG"><s0>XRD</s0>
<s5>09</s5>
</fC03><fC03 i1="10" i2="3" l="FRE"><s0>Boucle dislocation</s0>
<s5>10</s5>
</fC03><fC03 i1="10" i2="3" l="ENG"><s0>Dislocation loops</s0>
<s5>10</s5>
</fC03><fC03 i1="11" i2="3" l="FRE"><s0>Pastille électronique</s0>
<s5>11</s5>
</fC03><fC03 i1="11" i2="3" l="ENG"><s0>Wafers</s0>
<s5>11</s5>
</fC03><fC03 i1="12" i2="3" l="FRE"><s0>Recristallisation</s0>
<s5>12</s5>
</fC03><fC03 i1="12" i2="3" l="ENG"><s0>Recrystallization</s0>
<s5>12</s5>
</fC03><fC03 i1="13" i2="3" l="FRE"><s0>Traitement thermique</s0>
<s5>13</s5>
</fC03><fC03 i1="13" i2="3" l="ENG"><s0>Heat treatments</s0>
<s5>13</s5>
</fC03><fC03 i1="14" i2="X" l="FRE"><s0>Distribution concentration</s0>
<s5>14</s5>
</fC03><fC03 i1="14" i2="X" l="ENG"><s0>Concentration distribution</s0>
<s5>14</s5>
</fC03><fC03 i1="14" i2="X" l="SPA"><s0>Distribución concentración</s0>
<s5>14</s5>
</fC03><fC03 i1="15" i2="3" l="FRE"><s0>Profil profondeur</s0>
<s5>15</s5>
</fC03><fC03 i1="15" i2="3" l="ENG"><s0>Depth profiles</s0>
<s5>15</s5>
</fC03><fC03 i1="16" i2="3" l="FRE"><s0>Dislocation coin</s0>
<s5>16</s5>
</fC03><fC03 i1="16" i2="3" l="ENG"><s0>Edge dislocations</s0>
<s5>16</s5>
</fC03><fC03 i1="17" i2="3" l="FRE"><s0>Phénomène transitoire</s0>
<s5>17</s5>
</fC03><fC03 i1="17" i2="3" l="ENG"><s0>Transients</s0>
<s5>17</s5>
</fC03><fC03 i1="18" i2="X" l="FRE"><s0>Implantation</s0>
<s5>18</s5>
</fC03><fC03 i1="18" i2="X" l="ENG"><s0>Implantation</s0>
<s5>18</s5>
</fC03><fC03 i1="18" i2="X" l="SPA"><s0>Implantación</s0>
<s5>18</s5>
</fC03><fC03 i1="19" i2="3" l="FRE"><s0>Diffusion(transport)</s0>
<s5>19</s5>
</fC03><fC03 i1="19" i2="3" l="ENG"><s0>Diffusion</s0>
<s5>19</s5>
</fC03><fC03 i1="20" i2="3" l="FRE"><s0>Ségrégation</s0>
<s5>20</s5>
</fC03><fC03 i1="20" i2="3" l="ENG"><s0>Segregation</s0>
<s5>20</s5>
</fC03><fC03 i1="21" i2="3" l="FRE"><s0>Nickel</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03><fC03 i1="21" i2="3" l="ENG"><s0>Nickel</s0>
<s2>NC</s2>
<s5>22</s5>
</fC03><fC03 i1="22" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>23</s5>
</fC03><fC03 i1="22" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>23</s5>
</fC03><fC03 i1="23" i2="3" l="FRE"><s0>Arsenic</s0>
<s2>NC</s2>
<s5>24</s5>
</fC03><fC03 i1="23" i2="3" l="ENG"><s0>Arsenic</s0>
<s2>NC</s2>
<s5>24</s5>
</fC03><fC03 i1="24" i2="X" l="FRE"><s0>Siliciure de nickel</s0>
<s5>25</s5>
</fC03><fC03 i1="24" i2="X" l="ENG"><s0>Nickel silicide</s0>
<s5>25</s5>
</fC03><fC03 i1="24" i2="X" l="SPA"><s0>Níquel siliciuro</s0>
<s5>25</s5>
</fC03><fC03 i1="25" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>26</s5>
</fC03><fC03 i1="25" i2="3" l="ENG"><s0>Thin films</s0>
<s5>26</s5>
</fC03><fC03 i1="26" i2="3" l="FRE"><s0>Interface</s0>
<s5>27</s5>
</fC03><fC03 i1="26" i2="3" l="ENG"><s0>Interfaces</s0>
<s5>27</s5>
</fC03><fC03 i1="27" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>46</s5>
</fC03><fC03 i1="27" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>46</s5>
</fC03><fC03 i1="28" i2="3" l="FRE"><s0>6630P</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03><fC03 i1="29" i2="3" l="FRE"><s0>66</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03><fN21><s1>168</s1>
</fN21><fN44 i1="01"><s1>OTO</s1>
</fN44><fN82><s1>OTO</s1>
</fN82><pR><fA30 i1="01" i2="1" l="ENG"><s1>Materials for Advanced Metallization MAM 2012. Workshop</s1>
<s3>Grenoble FRA</s3>
<s4>2012-03-11</s4>
</fA30><server><NO>PASCAL 13-0188468 INIST</NO>
<ET>Direct observation of Ni decorated dislocation loops within As<sup>+</sup>
-implanted silicon and arsenic clustering in Ni silicide contact</ET><AU>HOUMMADA (Khalid); TELLOUCHE (Gamra); BLUM (Ivan); PORTAVOCE (Alain); DESCOINS (Marion); MANGELINCK (Dominique)</AU>
<AF>Aix-Marseille University, CNRS, IM2NP, Faculté des Sciences de Saint-Jérôme, Case 142/13397 Marseille/France (1 aut., 3 aut., 4 aut., 5 aut., 6 aut.); Département de Physique, faculté des sciences, Université de M'sila/M'sila 28000/Algérie (2 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Microelectronic engineering; ISSN 0167-9317; Coden MIENEF; Pays-Bas; Da. 2013; Vol. 107; Pp. 184-189; Bibl. 27 ref.</SO>
<LA>Anglais</LA>
<EA>The redistribution of arsenic and nickel during the reaction of Ni thin films with arsenic doped Si(100) substrates is studied by a combination of transmission electron microscopy (TEM), atom-probe tomography (APT) and in situ X-ray diffraction (XRD). Ni was observed at the edges of a pseudo-hexagonal dislocation loop within As<sup>+</sup>
-implanted (001)Si wafers, after recrystallisation of preamorphised Si and deposition of 100 nm Ni. After an additional heat treatment at 280 °C, the same concentration profiles were found with a maximum of ≃10% Ni at the edges of the dislocation loops, suggesting Cottrell atmospheres. In situ XRD showed the formation of a transient phase forming isolated grains at the δ-Ni<sub>2</sub>
Si/Si interface. Clusters containing 10% of As are present only in the transient phase. The presence of As clusters in silicide used for contact on devices might have significant influences on devices properties.</EA><CC>001B80A40E; 001B60F30P</CC>
<FD>Décoration dislocation; Agrégation; Classification automatique; Addition arsenic; Microscopie électronique transmission; Sonde atomique; Tomographie; In situ; Diffraction RX; Boucle dislocation; Pastille électronique; Recristallisation; Traitement thermique; Distribution concentration; Profil profondeur; Dislocation coin; Phénomène transitoire; Implantation; Diffusion(transport); Ségrégation; Nickel; Silicium; Arsenic; Siliciure de nickel; Couche mince; Interface; Matériau dopé; 6630P; 66</FD>
<ED>Dislocation décoration; Aggregation; Automatic classification; Arsenic additions; Transmission electron microscopy; Atom probe; Tomography; In situ; XRD; Dislocation loops; Wafers; Recrystallization; Heat treatments; Concentration distribution; Depth profiles; Edge dislocations; Transients; Implantation; Diffusion; Segregation; Nickel; Silicon; Arsenic; Nickel silicide; Thin films; Interfaces; Doped materials</ED>
<SD>Decoración dislocación; Clasificación automática; Sonda atómica; In situ; Distribución concentración; Implantación; Níquel siliciuro</SD>
<LO>INIST-20003.354000173393270330</LO>
<ID>13-0188468</ID>
</server>
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