Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects
Identifieur interne : 000411 ( PascalFrancis/Checkpoint ); précédent : 000410; suivant : 000412Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects
Auteurs : K. Laïhem [Algérie] ; R. Cherfi [Algérie] ; M. Aoucher [Algérie]Source :
- Thin solid films [ 0040-6090 ] ; 2001.
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Abstract
In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.
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Aoucher</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia</s1><s2>16111 Bab-Ezzouar, Alger</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><placeName><settlement type="city">Alger</settlement><region nuts="2">Wilaya d'Alger</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">01-0325373</idno><date when="2001">2001</date><idno type="stanalyst">PASCAL 01-0325373 INIST</idno><idno type="RBID">Pascal:01-0325373</idno><idno type="wicri:Area/PascalFrancis/Corpus">000412</idno><idno type="wicri:Area/PascalFrancis/Curation">000029</idno><idno type="wicri:Area/PascalFrancis/Checkpoint">000411</idno><idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">000411</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects</title><author><name sortKey="Laihem, K" sort="Laihem, K" uniqKey="Laihem K" first="K." last="Laïhem">K. Laïhem</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia</s1><s2>16111 Bab-Ezzouar, Alger</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><placeName><settlement type="city">Alger</settlement><region nuts="2">Wilaya d'Alger</region></placeName></affiliation></author><author><name sortKey="Cherfi, R" sort="Cherfi, R" uniqKey="Cherfi R" first="R." last="Cherfi">R. Cherfi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia</s1><s2>16111 Bab-Ezzouar, Alger</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><placeName><settlement type="city">Alger</settlement><region nuts="2">Wilaya d'Alger</region></placeName></affiliation></author><author><name sortKey="Aoucher, M" sort="Aoucher, M" uniqKey="Aoucher M" first="M." last="Aoucher">M. Aoucher</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia</s1><s2>16111 Bab-Ezzouar, Alger</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><placeName><settlement type="city">Alger</settlement><region nuts="2">Wilaya d'Alger</region></placeName></affiliation></author></analytic><series><title level="j" type="main">Thin solid films</title><title level="j" type="abbreviated">Thin solid films</title><idno type="ISSN">0040-6090</idno><imprint><date when="2001">2001</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Thin solid films</title><title level="j" type="abbreviated">Thin solid films</title><idno type="ISSN">0040-6090</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adsorption</term><term>Amorphous hydrogenated material</term><term>Desorption</term><term>Experimental study</term><term>Hydrogen</term><term>IV characteristic</term><term>Magnesium</term><term>Metal-semiconductor contacts</term><term>Nickel</term><term>Platinum</term><term>Rectification</term><term>Schottky barrier diodes</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Contact métal semiconducteur</term><term>Caractéristique courant tension</term><term>Effet redresseur</term><term>Matériau amorphe hydrogéné</term><term>Nickel</term><term>Magnésium</term><term>Platine</term><term>Diode barrière Schottky</term><term>Adsorption</term><term>Désorption</term><term>Hydrogène</term><term>7330</term><term>7340E</term><term>Ni</term><term>Mg</term><term>Pt</term><term>a-Si:H</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Nickel</term><term>Magnésium</term><term>Platine</term><term>Hydrogène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>383</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of Symposium O on Thin Film Materials for Large Area Electronics of the E-MRS 2000 Spring Conference, Strasbourg, France, May 30-June 2, 2000</s1></fA09><fA11 i1="01" i2="1"><s1>LAÏHEM (K.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHERFI (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>AOUCHER (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>EQUER (Bernard)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROCA I CABARROCAS (Pere)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>FORTUNATO (G.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>ROBERTSON (J.)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>BUERKLE (R.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia</s1><s2>16111 Bab-Ezzouar, Alger</s2><s3>DZA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>LPICM, Ecole Polytechnique</s1><s2>91128 Palaiseau</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>European Material Research Society</s1><s3>EUR</s3><s9>patr.</s9></fA18><fA20><s1>264-266</s1></fA20><fA21><s1>2001</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000098676400660</s5></fA43><fA44><s0>0000</s0><s1>© 2001 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>01-0325373</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. 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Laïhem</name></region><name sortKey="Aoucher, M" sort="Aoucher, M" uniqKey="Aoucher M" first="M." last="Aoucher">M. Aoucher</name><name sortKey="Cherfi, R" sort="Cherfi, R" uniqKey="Cherfi R" first="R." last="Cherfi">R. Cherfi</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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