NickelMaghrebV1, PascalFrancis, Corpus, bibRecord, 000412

Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects

Identifieur interne : 000412 ( PascalFrancis/Corpus ); précédent : 000411; suivant : 000413

Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects

Auteurs : K. Laïhem ; R. Cherfi ; M. Aoucher

Source :

Thin solid films [ 0040-6090 ] ; 2001.

RBID : Pascal:01-0325373

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Contact métal semiconducteur, Caractéristique courant tension, Effet redresseur, Matériau amorphe hydrogéné, Nickel, Magnésium, Platine, Diode barrière Schottky, Adsorption, Désorption, Hydrogène, 7330, 7340E, Ni, Mg, Pt, a-Si:H.

English descriptors

KwdEn :
- Adsorption, Amorphous hydrogenated material, Desorption, Experimental study, Hydrogen, IV characteristic, Magnesium, Metal-semiconductor contacts, Nickel, Platinum, Rectification, Schottky barrier diodes.

Abstract

In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0040-6090`
A02	`01`			`@0 THSFAP`
A03		`1`		`@0 Thin solid films`
A05				`@2 383`
A06				`@2 1-2`
A08	`01`	`1`	`ENG`	`@1 Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects`
A09	`01`	`1`	`ENG`	`@1 Proceedings of Symposium O on Thin Film Materials for Large Area Electronics of the E-MRS 2000 Spring Conference, Strasbourg, France, May 30-June 2, 2000`
A11	`01`	`1`		`@1 LAÏHEM (K.)`
A11	`02`	`1`		`@1 CHERFI (R.)`
A11	`03`	`1`		`@1 AOUCHER (M.)`
A12	`01`	`1`		`@1 EQUER (Bernard) @9 ed.`
A12	`02`	`1`		`@1 ROCA I CABARROCAS (Pere) @9 ed.`
A12	`03`	`1`		`@1 FORTUNATO (G.) @9 ed.`
A12	`04`	`1`		`@1 ROBERTSON (J.) @9 ed.`
A12	`05`	`1`		`@1 BUERKLE (R.) @9 ed.`
A14	`01`			`@1 Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia @2 16111 Bab-Ezzouar, Alger @3 DZA @Z 1 aut. @Z 2 aut. @Z 3 aut.`
A15	`01`			`@1 LPICM, Ecole Polytechnique @2 91128 Palaiseau @3 FRA @Z 1 aut. @Z 2 aut.`
A18	`01`	`1`		`@1 European Material Research Society @3 EUR @9 patr.`
A20				`@1 264-266`
A21				`@1 2001`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 13597 @5 354000098676400660`
A44				`@0 0000 @1 © 2001 INIST-CNRS. All rights reserved.`
A45				`@0 11 ref.`
A47	`01`	`1`		`@0 01-0325373`
A60				`@1 P @2 C`
A61				`@0 A`
A64	`01`	`1`		`@0 Thin solid films`
A66	`01`			`@0 CHE`
C01	`01`		`ENG`	@0 In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.
C02	`01`	`3`		`@0 001B70C30`
C02	`02`	`3`		`@0 001B70C40E`
C03	`01`	`3`	`FRE`	`@0 Etude expérimentale @5 01`
C03	`01`	`3`	`ENG`	`@0 Experimental study @5 01`
C03	`02`	`3`	`FRE`	`@0 Contact métal semiconducteur @5 02`
C03	`02`	`3`	`ENG`	`@0 Metal-semiconductor contacts @5 02`
C03	`03`	`3`	`FRE`	`@0 Caractéristique courant tension @5 03`
C03	`03`	`3`	`ENG`	`@0 IV characteristic @5 03`
C03	`04`	`3`	`FRE`	`@0 Effet redresseur @5 04`
C03	`04`	`3`	`ENG`	`@0 Rectification @5 04`
C03	`05`	`3`	`FRE`	`@0 Matériau amorphe hydrogéné @5 05`
C03	`05`	`3`	`ENG`	`@0 Amorphous hydrogenated material @5 05`
C03	`06`	`3`	`FRE`	`@0 Nickel @2 NC @5 06`
C03	`06`	`3`	`ENG`	`@0 Nickel @2 NC @5 06`
C03	`07`	`3`	`FRE`	`@0 Magnésium @2 NC @5 07`
C03	`07`	`3`	`ENG`	`@0 Magnesium @2 NC @5 07`
C03	`08`	`3`	`FRE`	`@0 Platine @2 NC @5 08`
C03	`08`	`3`	`ENG`	`@0 Platinum @2 NC @5 08`
C03	`09`	`3`	`FRE`	`@0 Diode barrière Schottky @5 09`
C03	`09`	`3`	`ENG`	`@0 Schottky barrier diodes @5 09`
C03	`10`	`3`	`FRE`	`@0 Adsorption @5 10`
C03	`10`	`3`	`ENG`	`@0 Adsorption @5 10`
C03	`11`	`3`	`FRE`	`@0 Désorption @5 11`
C03	`11`	`3`	`ENG`	`@0 Desorption @5 11`
C03	`12`	`3`	`FRE`	`@0 Hydrogène @2 NC @5 12`
C03	`12`	`3`	`ENG`	`@0 Hydrogen @2 NC @5 12`
C03	`13`	`3`	`FRE`	`@0 7330 @2 PAC @4 INC @5 56`
C03	`14`	`3`	`FRE`	`@0 7340E @2 PAC @4 INC @5 57`
C03	`15`	`3`	`FRE`	`@0 Ni @4 INC @5 92`
C03	`16`	`3`	`FRE`	`@0 Mg @4 INC @5 93`
C03	`17`	`3`	`FRE`	`@0 Pt @4 INC @5 94`
C03	`18`	`3`	`FRE`	`@0 a-Si:H @4 INC @5 95`
C07	`01`	`3`	`FRE`	`@0 Métal transition @5 16`
C07	`01`	`3`	`ENG`	`@0 Transition elements @5 16`
N21				`@1 225`

A30	`01`	`1`	`ENG`	`@1 Symposium on Thin Films for Large Area Electronics (LAE) @2 3 @3 Strasbourg FRA @4 2000-06`

Format Inist (serveur)

NO :	PASCAL 01-0325373 INIST
ET :	Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects
AU :	LAÏHEM (K.); CHERFI (R.); AOUCHER (M.); EQUER (Bernard); ROCA I CABARROCAS (Pere); FORTUNATO (G.); ROBERTSON (J.); BUERKLE (R.)
AF :	Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia/16111 Bab-Ezzouar, Alger/Algérie (1 aut., 2 aut., 3 aut.); LPICM, Ecole Polytechnique/91128 Palaiseau/France (1 aut., 2 aut.)
DT :	Publication en série; Congrès; Niveau analytique
SO :	Thin solid films; ISSN 0040-6090; Coden THSFAP; Suisse; Da. 2001; Vol. 383; No. 1-2; Pp. 264-266; Bibl. 11 ref.
LA :	Anglais
EA :	In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.
CC :	001B70C30; 001B70C40E
FD :	Etude expérimentale; Contact métal semiconducteur; Caractéristique courant tension; Effet redresseur; Matériau amorphe hydrogéné; Nickel; Magnésium; Platine; Diode barrière Schottky; Adsorption; Désorption; Hydrogène; 7330; 7340E; Ni; Mg; Pt; a-Si:H
FG :	Métal transition
ED :	Experimental study; Metal-semiconductor contacts; IV characteristic; Rectification; Amorphous hydrogenated material; Nickel; Magnesium; Platinum; Schottky barrier diodes; Adsorption; Desorption; Hydrogen
EG :	Transition elements
LO :	INIST-13597.354000098676400660
ID :	01-0325373

Links to Exploration step

Pascal:01-0325373

Le document en format XML

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<term>Amorphous hydrogenated material</term>
<term>Desorption</term>
<term>Experimental study</term>
<term>Hydrogen</term>
<term>IV characteristic</term>
<term>Magnesium</term>
<term>Metal-semiconductor contacts</term>
<term>Nickel</term>
<term>Platinum</term>
<term>Rectification</term>
<term>Schottky barrier diodes</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Contact métal semiconducteur</term>
<term>Caractéristique courant tension</term>
<term>Effet redresseur</term>
<term>Matériau amorphe hydrogéné</term>
<term>Nickel</term>
<term>Magnésium</term>
<term>Platine</term>
<term>Diode barrière Schottky</term>
<term>Adsorption</term>
<term>Désorption</term>
<term>Hydrogène</term>
<term>7330</term>
<term>7340E</term>
<term>Ni</term>
<term>Mg</term>
<term>Pt</term>
<term>a-Si:H</term>
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<front><div type="abstract" xml:lang="en">In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.</div>
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<fA06><s2>1-2</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of Symposium O on Thin Film Materials for Large Area Electronics of the E-MRS 2000 Spring Conference, Strasbourg, France, May 30-June 2, 2000</s1>
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<fA11 i1="01" i2="1"><s1>LAÏHEM (K.)</s1>
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<fA11 i1="02" i2="1"><s1>CHERFI (R.)</s1>
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<fA11 i1="03" i2="1"><s1>AOUCHER (M.)</s1>
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<fA12 i1="01" i2="1"><s1>EQUER (Bernard)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>ROCA I CABARROCAS (Pere)</s1>
<s9>ed.</s9>
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<s9>ed.</s9>
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<fA12 i1="04" i2="1"><s1>ROBERTSON (J.)</s1>
<s9>ed.</s9>
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<fA12 i1="05" i2="1"><s1>BUERKLE (R.)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia</s1>
<s2>16111 Bab-Ezzouar, Alger</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA15 i1="01"><s1>LPICM, Ecole Polytechnique</s1>
<s2>91128 Palaiseau</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>European Material Research Society</s1>
<s3>EUR</s3>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA66 i1="01"><s0>CHE</s0>
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<fC01 i1="01" l="ENG"><s0>In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C30</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C40E</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Contact métal semiconducteur</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Metal-semiconductor contacts</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>IV characteristic</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Effet redresseur</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Rectification</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Matériau amorphe hydrogéné</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Amorphous hydrogenated material</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Nickel</s0>
<s2>NC</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Nickel</s0>
<s2>NC</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Magnésium</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Magnesium</s0>
<s2>NC</s2>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Platine</s0>
<s2>NC</s2>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Platinum</s0>
<s2>NC</s2>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Diode barrière Schottky</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Schottky barrier diodes</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Adsorption</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Adsorption</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Désorption</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Desorption</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Hydrogène</s0>
<s2>NC</s2>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Hydrogen</s0>
<s2>NC</s2>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>7330</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>7340E</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Ni</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Mg</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Pt</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>a-Si:H</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Métal transition</s0>
<s5>16</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Transition elements</s0>
<s5>16</s5>
</fC07>
<fN21><s1>225</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Symposium on Thin Films for Large Area Electronics (LAE)</s1>
<s2>3</s2>
<s3>Strasbourg FRA</s3>
<s4>2000-06</s4>
</fA30>
</pR>
</standard>
<server><NO>PASCAL 01-0325373 INIST</NO>
<ET>Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects</ET>
<AU>LAÏHEM (K.); CHERFI (R.); AOUCHER (M.); EQUER (Bernard); ROCA I CABARROCAS (Pere); FORTUNATO (G.); ROBERTSON (J.); BUERKLE (R.)</AU>
<AF>Laboratoire des Couches Minces et des Semiconducteurs, Institut de Physique, USTHB, BP 32 El Alia/16111 Bab-Ezzouar, Alger/Algérie (1 aut., 2 aut., 3 aut.); LPICM, Ecole Polytechnique/91128 Palaiseau/France (1 aut., 2 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Thin solid films; ISSN 0040-6090; Coden THSFAP; Suisse; Da. 2001; Vol. 383; No. 1-2; Pp. 264-266; Bibl. 11 ref.</SO>
<LA>Anglais</LA>
<EA>In this work we study metal/hydrogenated amorphous silicon structures (metal/a-Si:H). The a-Si:H is deposited at a high rate by DC magnetron sputtering on N-type doped silicon substrate. The metal is deposited by DC sputtering on the a-Si:H. Nickel, magnesium and platinum are used. The current-voltage (I-V) curves show a rectifying contact. The hydrogen is injected in the vacuum chamber at low pressure (1 mbar) to interact with the metal/a-Si:H structure. The interaction effect is observed on the I-V characteristics and on the complex impedance behavior. These effects may be explained by a thermal activation of hydrogen adsorption/desorption phenomena which is localized in the interfacial zone. The hydrogen is chemisorbed in the interfacial zone and modifies its electrical charge.</EA>
<CC>001B70C30; 001B70C40E</CC>
<FD>Etude expérimentale; Contact métal semiconducteur; Caractéristique courant tension; Effet redresseur; Matériau amorphe hydrogéné; Nickel; Magnésium; Platine; Diode barrière Schottky; Adsorption; Désorption; Hydrogène; 7330; 7340E; Ni; Mg; Pt; a-Si:H</FD>
<FG>Métal transition</FG>
<ED>Experimental study; Metal-semiconductor contacts; IV characteristic; Rectification; Amorphous hydrogenated material; Nickel; Magnesium; Platinum; Schottky barrier diodes; Adsorption; Desorption; Hydrogen</ED>
<EG>Transition elements</EG>
<LO>INIST-13597.354000098676400660</LO>
<ID>01-0325373</ID>
</server>
</inist>
</record>

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Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects

Hydrogen interaction on metal/hydrogenated amorphous silicon schottky structures: adsorption/desorption effects

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