Quaternary compound < Quaternary compounds < Quaternary system

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List of bibliographic references

Number of relevant bibliographic references: 86.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000034 (2012)		Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide
000128 (2010)		Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity
000149 (2009)		Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000173 (2009)		Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique
000208 (2008)		Frequency tuning of diode laser radiation by surface acoustic wave
000290 (2006)		Simulations of light -current and spectral characteristics of InGaAlAs/InP semiconductor lasers
000339 (2005)		Study of nonlinear-optical characteristics of AgGa1-xInxSe2 crystals
000363 (2005)		Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary
000373 (2005)		High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000384 (2005)		Diagnostics of ortho and para water isomers with tunable diode lasers
000435 (2004)		XPS and XPD investigation of (1 1 2) CuInSe2 and Cu(InGa)Se2 surfaces
000451 (2004)		Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000457 (2004)		Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures
000474 (2004)		High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy
000493 (2004)		Antiferroelectric phase transition in Sr9In(PO4)7
000594 (2003)		Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
000602 (2003)		Structural perfection of four-layer GaxIn1-xAsyP1-y laser heterostructures
000608 (2003)		SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000613 (2003)		Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys
000633 (2003)		Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
000644 (2003)		Interface luminescence and lasing at a type II single broken-gap heterojunction

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