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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Quaternary alloys < Quaternary compound < Quaternary compounds  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000126 (2010) Band structure at heterojunction interfaces of GaInP solar cells
000483 (2004) Efficiency improvement of AlGaInN LEDs advanced by ray-tracing analysis
000618 (2003) Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
000689 (2003) Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm
000696 (2003) AlyIn1-ySb1-xBix/InSb photodetecting superlattices
000D45 (1999) Thermally induced currents and instabilities of photoresponse in the PbTe(In) based films
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
000F45 (1998) InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range
000F48 (1998) GaSb based PV cells with Zn-diffused emitters
000F49 (1998) GaInAsSb/GaSb double heterostructure light emitting diodes fabricated by LPE from Sb-rich melts
001107 (1997) Mechanisms of acoustooptical interaction in resonant systems based on AlGaInAs
001339 (1995) Wavelength and polarisation switching in InGaAsP/InP DFB lasers
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001356 (1995) Rare-earth elements in the technology of InP, InGaAsP and devices based on these semiconductor compounds
001387 (1995) Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001476 (1994) Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation
001485 (1994) Generation of 110 GHz train of subpicosecond pulses in 1.535 μm spectral region by passively modelocked InGaAsP/InP laser diodes

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