Serveur d'exploration sur l'Indium - Analysis (Russie)

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Quantum wires < Quantum yield < Quasi classical theory  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]
Ident.Authors (with country if any)Title
000016 (2013) Passivation of boron-doped p+-Si emitters in the (p+ nn+)Si solar cell structure with AlOx grown by ultrasonic spray pyrolysis
000061 (2011) Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000073 (2011) Modeling of III-nitride Light-Emitting Diodes: Progress, Problems, and Perspectives
000074 (2011) MOVPE of device-oriented wide-band-gap III-N heterostructures
000089 (2010) Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
000102 (2010) Optimization of Optical Orientation and Electron Spin Transport in AlInGaAs/AlGaAs Superlattice
000170 (2009) Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures
000174 (2009) Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters
000191 (2008) Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000232 (2007) Quantum-dot superluminescent diodes with improved performance
000235 (2007) Performance of InAs-based infrared photodiodes
000237 (2007) Optoelectronic sensors on GaSb-and InAs-based heterostructures for ecological monitoring and medical diagnostics
000241 (2007) MBE-grown metamorphic lasers for applications at telecom wavelengths
000276 (2006) Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000372 (2005) High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000373 (2005) High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000391 (2005) Acceptor states in the photoluminescence spectra of n-InN
000457 (2004) Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures
000483 (2004) Efficiency improvement of AlGaInN LEDs advanced by ray-tracing analysis
000495 (2004) 1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

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