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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Quantum wells < Quantum wires < Quantum yield  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000071 (2011) New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires
000455 (2004) Physical properties of two dimensional nets of quantum InGaAs wires
000744 (2002-05-10) Self-Formation of Quantum Wire Networks in Porous InGaAs/GaAs Superlattices
000D58 (1999) Pump-probe studies of photoluminescence of InP quantum wires embedded in dielectric matrix
000D73 (1999) Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers
000F43 (1998) Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
001331 (1995-02-15) Linear polarization of photoluminescence emission and absorption in quantum-well wire structures: Experiment and theory
001336 (1995-01-02) Response to Comment: ''Comment on 'Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces' '' [Appl. Phys. Lett. 66, 111 (1995)]
001354 (1995) Reactive ion etched quantum wire structures for laser applications
001371 (1995) Linear polarization of photoluminescence and Raman scattering in open InGaAs/InP quantum well wires
001379 (1995) Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy
001419 (1994-09) Development and study of the optical properties of InGaAs/GaAs quantum wires
001438 (1994-05) Time-varying transport of hot electrons in quantum wires with scattering by polar optical phonons at low temperatures
001453 (1994-02) Quantum wires with controllable conducting-channel width based on In0.53Ga0.47As/InP heterostructures
001474 (1994) Quantum wires with the tunable width of conducting channel in In0.53Ga0.47As/InP heterostructures

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