Interface states < Interface structure < Interface tension

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]

Ident.	Authors (with country if any)	Title
000019 (2013)		Microstructure of Interfaces in Heterosystems
000123 (2010)		Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface
000328 (2006)		Characterisation of metal-organic semiconductor interfaces : In and Sn on CuPc
000463 (2004)		Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction
000499 (2003-12)		Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000505 (2003-11-03)		Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000589 (2003-01)		Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
000716 (2002-09)		The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix
000730 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
000878 (2001-09)		Structure of the Interfaces of the InxGa1 - xAs Quantum Well from X-ray Diffraction Data
000934 (2001)		The improvement of the SiO2/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system
000B49 (2000)		Quantitative STM investigation of the phase formation in submonolayer In/Si(111) system
000C28 (1999-11-15)		Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions
000C35 (1999-10-15)		Raman study of the topology of InAs/GaAs self-assembled quantum dots
000D50 (1999)		Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing
000E28 (1998-11)		Scanning electron microscopy of long-wavelength laser structures
000E58 (1998-07)		Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C
000F06 (1998-01)		High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
000F07 (1998-01)		Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
000F93 (1997-10)		Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures
000F96 (1997-10)		Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy

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