Interface state < Interface states < Interface structure

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List of bibliographic references

Number of relevant bibliographic references: 54.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000395 (2004-06-25)		Experimental Separation of Rashba and Dresselhaus Spin Splittings in Semiconductor Quantum Wells
000431 (2004-01-05)		Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
000497 (2003-12-15)		Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation
000505 (2003-11-03)		Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000518 (2003-10)		Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000725 (2002-08-15)		Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
000737 (2002-06-15)		Zero-field spin quantum beats in charged quantum dots
000859 (2001-12-15)		Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
000881 (2001-09)		Electronic Properties of InAs-Based Metal-Insulator-Semiconductor (MIS) Structures
000885 (2001-08-15)		Strain engineering of self-organized InAs quantum dots
000901 (2001-05)		Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System
000910 (2001-03-19)		Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
000926 (2001-01-15)		Excitonic contributions to the quantum-confined Pockels effect
000A21 (2000-12-15)		Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000A69 (2000-06-15)		Optical transitions in broken gap heterostructures
000B26 (2000-01-03)		Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation
000C36 (1999-10-15)		Evidence for electron-hole hybridization in cyclotron-resonance spectra of InAs/GaSb heterostructures
000C58 (1999-09)		Gain characteristics of quantum-dot injection lasers
000C73 (1999-07-15)		Excited states and selection rules in self-assembled InAs/GaAs quantum dots
000C88 (1999-06)		Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers
000C91 (1999-05-15)		Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states

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