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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Epitaxy »
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Epitaxial layers < Epitaxy < Equation resolution  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 63.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000107 (2010) Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures
000108 (2010) Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
000114 (2010) Influence of ex-situ AFM treatment on epitaxial growth of self-organized InAs quantum dots
000367 (2005) Long-wavelength lasers based on metamorphic quantum dots
000373 (2005) High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000515 (2003-10) InAs Based Multicomponent Solid Solutions for Thermophotovoltaic Converters
000536 (2003-07) Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
000687 (2003) Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique
000767 (2002-02-15) Modeling cross-hatch surface morphology in growing mismatched layers
000880 (2001-09) Epitaxial Growth, Electronic Properties, and Photocathode Applications of Strained Pseudomorphic InGaAsP/GaAs Layers
000882 (2001-09) Electron Microscopy of Epitaxial Structures of Pseudobinary AIIIBV Solid Solutions and the Model of Nonequilibrium Ordering in Epitaxial Growth
000A91 (2000-05) A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns
000A96 (2000-04) Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces
000B83 (2000) High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films
000C00 (2000) Conductive and transparent zinc oxide films
000D72 (1999) Nanosecond laser annealing of zinc-doped indium phosphide
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
000F41 (1998) Interface-induced phenomena in type II antimonide-arsenide heterostructures
000F49 (1998) GaInAsSb/GaSb double heterostructure light emitting diodes fabricated by LPE from Sb-rich melts
000F70 (1998) Bicrystallography of the epitaxic systems 'III-V nitrides on sapphire' : Theory and experiment
001282 (1995-10-23) InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy

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