Epitaxial growth < Epitaxial layers < Epitaxy

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List of bibliographic references

Number of relevant bibliographic references: 72.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000043 (2012)		Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction
000060 (2011)		Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations
000094 (2010)		Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis
000114 (2010)		Influence of ex-situ AFM treatment on epitaxial growth of self-organized InAs quantum dots
000137 (2009)		Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
000146 (2009)		Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface
000180 (2009)		A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000204 (2008)		Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
000233 (2007)		Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000246 (2007)		InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000251 (2007)		Growth and defects of GaAs and InGaAs films on porous GaAs substrates
000273 (2007)		Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation
000283 (2006)		Structure and composition of chemically prepared and vacuum annealed InSb(0 0 1) surfaces
000307 (2006)		Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
000338 (2005)		Synchrotron X-ray topographic study of dislocations and stacking faults in InAs
000404 (2004-05)		MOCVD Growth and Mg-Doping of InAs Layers
000411 (2004-04)		The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System
000451 (2004)		Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000454 (2004)		Plasma-assisted MBE growth and characterization of InN on sapphire
000464 (2004)		Mie resonances, infrared emission, and the band gap of InN

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