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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Crystal growth < Crystal growth from melts < Crystal growth from solutions  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]
Ident.Authors (with country if any)Title
000057 (2011) The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
000207 (2008) Growth striations and dislocations in highly doped semiconductor single crystals
000221 (2007) Theoretical confirmation of the crystallization of a compound alloy using the AHP crystal growth method
000270 (2007) Ce2Ru2In3 and Ce3Ru2In2 : Site exchange in ternary indides of a new structure type
000330 (2006) 3D unsteady analysis of gas turbulent convection during HPLEC InP growth
000418 (2004-03) Investigation of the Possibility of Obtaining Homogeneous Ga1 - xInxSb Crystals under Weak Flow Conditions
000420 (2004-03) Influence of Various Conditions of Convective Mixing of Melt on the Structure and Magnetoresistance of Eutectic InSb-NiSb Alloys Obtained by Directional Crystallization
000449 (2004) Semiconductor Bridgman growth inside inertial flight mode orbiting systems of low orbital eccentricity and long orbital period
000507 (2003-11) Photosensitive Structures Based on In2S3 Crystals
000616 (2003) Preparation and structure of AgGa1-xInxSe2 single crystals
000624 (2003) Optical properties of lithium indium selenide
000630 (2003) Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals
000739 (2002-06-15) LiInSe2: A biaxial ternary chalcogenide crystal for nonlinear optical applications in the midinfrared
000840 (2002) Dislocations and 90°-twins in LEC-grown InP crystals
000889 (2001-08) Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe2 Crystals
000952 (2001) Preparation, structure, and electrical properties of thin In1-xCdxSb (x = 0.001-0.003) films
000B54 (2000) Physical properties of Bi2Te2.85Se0.15 single crystals doped with Cu, Cd, In, Ge, S, or Se
000B79 (2000) InSb-InAs alloys prepared by rapid quenching (106-108 K/s)
000B85 (2000) Growth and characterization of LiInS2 single crystals
000D64 (1999) Physicochemical aspects of adhesion of thin MSb (M = In, Ga, Cd) layers
000D77 (1999) Melt growth of InAs1-xPx crystals under controlled vapor pressure

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