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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Crystal field splitting < Crystal growth < Crystal growth from melts  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 66.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000057 (2011) The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
000207 (2008) Growth striations and dislocations in highly doped semiconductor single crystals
000451 (2004) Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000598 (2003) Temperature dependence of the resistivity for metal-oxide semiconductors based on tin dioxide
000696 (2003) AlyIn1-ySb1-xBix/InSb photodetecting superlattices
000717 (2002-09) Synthesis and Crystal Structure of New Double Indium Phosphates MI3In(PO4)2 (MI = K and Rb)
000844 (2002) Determination of the melt undercooling required for producing AlxGayIn1-x-ySb1-zBiz/InSb heterostructures
000B44 (2000) Solid-state spreading and crystallization of In2O3: Structure and morphology of films on single-crystal Al2O3 and yttria-stabilized zirconia substrates
000B50 (2000) Pulsed photon treatment of CuInSe2 films
000B68 (2000) LPE growth of GaSb and Sb-based solid solutions
000B83 (2000) High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films
000B87 (2000) Gaas-based 1.3 μm InGaAs quantum dot lasers : A status report : Special issue papers
000D51 (1999) Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases
000D96 (1999) Electroepitaxy : the control of the kinetics and morphology of InSb
000F12 (1998) Vapor-liquid-solid growth of Pb1-xInxTe crystals
000F75 (1998) AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions
001072 (1997) Thermal oxidation of NiS/InP structures
001094 (1997) Rapid and high concentrated permeation of Ga into InSb
001113 (1997) InGaAsSb growth from Sb-rich solutions
001126 (1997) Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces
001131 (1997) Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas

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