GaInAsSb/InAs heterojunctions
Identifieur interne : 001325 ( Russie/Analysis ); précédent : 001324; suivant : 001326GaInAsSb/InAs heterojunctions
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Abstract
Heterostructures based on Ga1-xInxAsySb1-y (x = 0.17, y = 0.22) solid solutions lattice-matched with the InAs (100) substrate have been fabricated and studied for the first time. Galvanomagnetic, electrical, and photoelectric properties were studied for four types of GaInAsSb/InAs heterostructures: N-n, P-p, P-n, and N-p. The band offsets at the heterojunction, ΔEc and ΔEv, were determined. Approximate energy-band schemes of these junctions are constructed. The Ga0.83In0.17As0.22Sb0.78/InAs heterostructure is a broken-gap type-II heterojunction. A high electron mobility (μn = 70 000 cm2/V.s at T = 77 K) in a channel has been observed for the first time in a GaInAsSb/InAs single heterojunction. This junction is formed by growing an undoped layer of the quaternary solid solution on a lightly doped p-InAs substrate. © 1995 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">GaInAsSb/InAs heterojunctions</title><author><name sortKey="Mikhailova, M P" uniqKey="Mikhailova M">M. P. Mikhailova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Andreev, I A" uniqKey="Andreev I">I. A. Andreev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Voronina, T I" uniqKey="Voronina T">T. I. Voronina</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Lagunova, T S" uniqKey="Lagunova T">T. S. Lagunova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Moiseev, K D" uniqKey="Moiseev K">K. D. Moiseev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Yakovlev, Yu P" uniqKey="Yakovlev Y">Yu. P. Yakovlev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0239697</idno><date when="1995-04">1995-04</date><idno type="stanalyst">PASCAL 95-0239697 AIP</idno><idno type="RBID">Pascal:95-0239697</idno><idno type="wicri:Area/Main/Corpus">01CB31</idno><idno type="wicri:Area/Main/Repository">01BB59</idno><idno type="wicri:Area/Russie/Extraction">001325</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7826</idno><title level="j" type="abbreviated">Semiconductors</title><title level="j" type="main">Semiconductors</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron mobility</term><term>Experimental study</term><term>Fabrication</term><term>Gallium antimonides</term><term>Gallium arsenides</term><term>Galvanomagnetic effect</term><term>Heterojunctions</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Photoelectric effect</term><term>Solid solutions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>7340K</term><term>7350P</term><term>7350J</term><term>Solution solide</term><term>Hétérojonction</term><term>Gallium arséniure</term><term>Indium arséniure</term><term>Gallium antimoniure</term><term>Indium antimoniure</term><term>Fabrication</term><term>Effet galvanomagnétique</term><term>Effet photoélectrique</term><term>Mobilité électron</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Heterostructures based on Ga<sub>1-x</sub>In<sub>x</sub>As<sub>y</sub>Sb<sub>1-y</sub> (x = 0.17, y = 0.22) solid solutions lattice-matched with the InAs (100) substrate have been fabricated and studied for the first time. Galvanomagnetic, electrical, and photoelectric properties were studied for four types of GaInAsSb/InAs heterostructures: N-n, P-p, P-n, and N-p. The band offsets at the heterojunction, ΔE<sub>c</sub> and ΔE<sub>v</sub>, were determined. Approximate energy-band schemes of these junctions are constructed. The Ga<sub>0.83</sub>In<sub>0.17</sub>As<sub>0.22</sub>Sb<sub>0.78</sub>/InAs heterostructure is a broken-gap type-II heterojunction. A high electron mobility (μ<sub>n</sub> = 70 000 cm<sup>2</sup>/V.s at T = 77 K) in a channel has been observed for the first time in a GaInAsSb/InAs single heterojunction. This junction is formed by growing an undoped layer of the quaternary solid solution on a lightly doped p-InAs substrate. © 1995 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0></fA01><fA02 i1="01"><s0>SMICES</s0></fA02><fA03 i2="1"><s0>Semiconductors</s0></fA03><fA05><s2>29</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>GaInAsSb/InAs heterojunctions</s1></fA08><fA11 i1="01" i2="1"><s1>MIKHAILOVA (M. P.)</s1></fA11><fA11 i1="02" i2="1"><s1>ANDREEV (I. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>VORONINA (T. I.)</s1></fA11><fA11 i1="04" i2="1"><s1>LAGUNOVA (T. S.)</s1></fA11><fA11 i1="05" i2="1"><s1>MOISEEV (K. D.)</s1></fA11><fA11 i1="06" i2="1"><s1>YAKOVLEV (Yu. P.)</s1></fA11><fA14 i1="01"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>353-356</s1></fA20><fA21><s1>1995-04</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12492</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>95-0239697</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductors</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Heterostructures based on Ga<sub>1-x</sub>In<sub>x</sub>As<sub>y</sub>Sb<sub>1-y</sub> (x = 0.17, y = 0.22) solid solutions lattice-matched with the InAs (100) substrate have been fabricated and studied for the first time. Galvanomagnetic, electrical, and photoelectric properties were studied for four types of GaInAsSb/InAs heterostructures: N-n, P-p, P-n, and N-p. The band offsets at the heterojunction, ΔE<sub>c</sub> and ΔE<sub>v</sub>, were determined. Approximate energy-band schemes of these junctions are constructed. The Ga<sub>0.83</sub>In<sub>0.17</sub>As<sub>0.22</sub>Sb<sub>0.78</sub>/InAs heterostructure is a broken-gap type-II heterojunction. A high electron mobility (μ<sub>n</sub> = 70 000 cm<sup>2</sup>/V.s at T = 77 K) in a channel has been observed for the first time in a GaInAsSb/InAs single heterojunction. This junction is formed by growing an undoped layer of the quaternary solid solution on a lightly doped p-InAs substrate. © 1995 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C40K</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C50P</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C50J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7340K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7350P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7350J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Solution solide</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Solid solutions</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Hétérojonction</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Heterojunctions</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Indium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Fabrication</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Fabrication</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Effet galvanomagnétique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Galvanomagnetic effect</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Effet photoélectrique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Photoelectric effect</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Mobilité électron</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Electron mobility</s0></fC03><fN21><s1>136</s1></fN21><fN47 i1="01" i2="1"><s0>9509M3966</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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