Heterojunction transistor < Heterojunctions < Heteropolyacid

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List of bibliographic references

Number of relevant bibliographic references: 73.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000023 (2013)		Electronic properties of a single heterojunction in InSb/InAs quantum dot system
000068 (2011)		Photoreflectance study of indium segregation in the InGaAs quantum well
000137 (2009)		Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000235 (2007)		Performance of InAs-based infrared photodiodes
000243 (2007)		Junction formation of CuInSe2 with CdS: A comparative study of "dry" and "wet" interfaces
000594 (2003)		Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
000618 (2003)		Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE
000633 (2003)		Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
000638 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
000644 (2003)		Interface luminescence and lasing at a type II single broken-gap heterojunction
000661 (2003)		High-mobility InAs/AlSb heterostructures for spintronics applications
000681 (2003)		Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma
000682 (2003)		Effect of superstoichiometric Sb content on the electrical properties of InSb/α-Al2O3 photoconductive detectors
000687 (2003)		Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique
000688 (2003)		Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000689 (2003)		Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm
000781 (2002)		Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000791 (2002)		Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000806 (2002)		Novel I-III-VI2 semiconductor-native protein structures and their photosensitivities

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