Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures
Identifieur interne : 001316 ( Russie/Analysis ); précédent : 001315; suivant : 001317Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures
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Abstract
We have studied monolayer (ML) and submonolayer InAs insertions (1-0.08 ML) in a GaAs matrix by photoluminescence, photoluminescence excitation, and optical-reflectance spectroscopy. Linewidths of heavy-hole and light-hole exciton peaks as narrow as 0.15 meV are observed. A surprisingly high exciton oscillator strength, its weak dependence on the average thickness of the InAs layer, and the pronounced anisotropy and splitting of heavy- and light-hole exciton peaks are all revealed in the optical studies and are attributed to the formation of ordered arrays of InAs wirelike islands. Furthermore, from photoluminescence and reflectance-anisotropy measurements, we confirm that the wire arrays are elongated along the [01-] direction.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures</title><author><name sortKey="Belousov, M V" uniqKey="Belousov M">M. V. Belousov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, St. Petersburg State University, Petrodvoretz, St. Petersburg 198904, Russia</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Physics, St. Petersburg State University, Petrodvoretz, St. Petersburg 198904</wicri:regionArea><wicri:noRegion>St. Petersburg 198904</wicri:noRegion></affiliation></author><author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Maximov, M V" uniqKey="Maximov M">M. V. Maximov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Wang, P D" uniqKey="Wang P">P. D. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ</wicri:regionArea><wicri:noRegion>Glasgow G12 8QQ</wicri:noRegion></affiliation></author><author><name sortKey="Yasievich, I N" uniqKey="Yasievich I">I. N. Yasievich</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Faleev, N N" uniqKey="Faleev N">N. N. Faleev</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kozin, I A" uniqKey="Kozin I">I. A. Kozin</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kop Ev, P S" uniqKey="Kop Ev P">P. S. Kop Ev</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sotomayor Torres, C M" uniqKey="Sotomayor Torres C">C. M. Sotomayor Torres</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom</s1><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ</wicri:regionArea><wicri:noRegion>Glasgow G12 8QQ</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">95-0391775</idno><date when="1995-05-15">1995-05-15</date><idno type="stanalyst">PASCAL 95-0391775 AIP</idno><idno type="RBID">Pascal:95-0391775</idno><idno type="wicri:Area/Main/Corpus">01C520</idno><idno type="wicri:Area/Main/Repository">01BA21</idno><idno type="wicri:Area/Russie/Extraction">001316</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. Rev. B</title><title level="j" type="main">Physical Review B (Condensed Matter)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Energy levels</term><term>Experimental study</term><term>Gallium arsenides</term><term>Heterostructures</term><term>Indium arsenides</term><term>Optical reflection</term><term>Oscillator strengths</term><term>Photoluminescence</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>7320D</term><term>7855C</term><term>Hétérostructure</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Niveau énergie</term><term>Force oscillateur</term><term>Photoluminescence</term><term>Réflexion optique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied monolayer (ML) and submonolayer InAs insertions (1-0.08 ML) in a GaAs matrix by photoluminescence, photoluminescence excitation, and optical-reflectance spectroscopy. Linewidths of heavy-hole and light-hole exciton peaks as narrow as 0.15 meV are observed. A surprisingly high exciton oscillator strength, its weak dependence on the average thickness of the InAs layer, and the pronounced anisotropy and splitting of heavy- and light-hole exciton peaks are all revealed in the optical studies and are attributed to the formation of ordered arrays of InAs wirelike islands. Furthermore, from photoluminescence and reflectance-anisotropy measurements, we confirm that the wire arrays are elongated along the [01-] direction.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. Rev. B</s0></fA03><fA05><s2>51</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>BELOUSOV (M. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEDENTSOV (N. N.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAXIMOV (M. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>WANG (P. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>YASIEVICH (I. N.)</s1></fA11><fA11 i1="06" i2="1"><s1>FALEEV (N. N.)</s1></fA11><fA11 i1="07" i2="1"><s1>KOZIN (I. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>USTINOV (V. M.)</s1></fA11><fA11 i1="09" i2="1"><s1>KOP'EV (P. S.)</s1></fA11><fA11 i1="10" i2="1"><s1>SOTOMAYOR TORRES (C. M.)</s1></fA11><fA14 i1="01"><s1>Institute of Physics, St. Petersburg State University, Petrodvoretz, St. Petersburg 198904, Russia</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom</s1><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>A. F. Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="05"><s1>Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom</s1><sZ>10 aut.</sZ></fA14><fA20><s1>14346-14351</s1></fA20><fA21><s1>1995-05-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144B</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>95-0391775</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical Review B (Condensed Matter)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have studied monolayer (ML) and submonolayer InAs insertions (1-0.08 ML) in a GaAs matrix by photoluminescence, photoluminescence excitation, and optical-reflectance spectroscopy. Linewidths of heavy-hole and light-hole exciton peaks as narrow as 0.15 meV are observed. A surprisingly high exciton oscillator strength, its weak dependence on the average thickness of the InAs layer, and the pronounced anisotropy and splitting of heavy- and light-hole exciton peaks are all revealed in the optical studies and are attributed to the formation of ordered arrays of InAs wirelike islands. Furthermore, from photoluminescence and reflectance-anisotropy measurements, we confirm that the wire arrays are elongated along the [01-] direction.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Hétérostructure</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Heterostructures</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Niveau énergie</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Energy levels</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Force oscillateur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Oscillator strengths</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Réflexion optique</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Optical reflection</s0></fC03><fN21><s1>213</s1></fN21><fN47 i1="01" i2="1"><s0>9513M0724</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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