Photoionization < Photoluminescence < Photomagnetic effect

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 474.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000029 (2012)		Synthesis and luminescence properties of lithium, zinc and scandium 1-(2-pyridyl)naphtholates
000030 (2012)		Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000039 (2012)		Optical characterization of individual quantum dots
000048 (2012)		Effects of p-type doping on the optical properties of InAs/GaAs quantum dots
000054 (2011)		Tunnel injection emitter structures with barriers comprising nanobridges
000084 (2011)		Circularly polarized basic photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ-layer in the barrier
000097 (2010)		Quantum dots for single and entangled photon emitters
000100 (2010)		Plasmonic effects and optical properties of InN composites with In nanoparticles
000107 (2010)		Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures
000129 (2010)		Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
000134 (2009)		Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source
000152 (2009)		InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
000169 (2009)		Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots
000177 (2009)		Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells
000182 (2008)		Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000186 (2008)		Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells
000195 (2008)		Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm)
000204 (2008)		Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
000209 (2008)		Energy characteristics of excitons in InGaN/GaN heterostructures
000233 (2007)		Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

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