IndiumV3, Russie, Analysis, bibRecord, 000D73

Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers

Identifieur interne : 000D73 ( Russie/Analysis ); précédent : 000D72; suivant : 000D74

Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers

Auteurs : RBID : Pascal:99-0386018

Descripteurs français

Pascal (Inist)
- 4255P, Etude expérimentale, Laser semiconducteur, Laser injection, Fil quantique, Autoorganisation, Epitaxie jet moléculaire, Photoluminescence, Courant seuil, Gain, Saturation, Composé minéral, Composé ternaire, Indium arséniure, Aluminium arséniure, Gallium arséniure, InAlAs, Al As In, InGaAs, As Ga In.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Aluminium arsenides, Experimental study, Gain, Gallium arsenides, Indium arsenides, Injection laser, Inorganic compounds, Molecular beam epitaxy, Photoluminescence, Quantum wires, Saturation, Self organization, Semiconductor lasers, Ternary compounds, Threshold current.

Abstract

Injection lasers based on self-organized (In,Ga)As/(Al,Ga)As quantum dots (QD) suffer from the gain saturation due to the limited amount of QD states participating in lasing. In the present work, we demonstrate the direct increase in the areal density of (In,Ga)As QDs. We used an array of (In,Al)As QDs demonstrating considerably higher density than Al-free QDs as nucleation centers for the (In,Ga)As QD formation. Finally, composite vertically coupled (In,Al)As/(In,Ga)As QDs with increased areal density are formed, which is confirmed by photoluminescence and TEM. Using the denser array of (In,Al)As/(In,Ga)As QDs in the active region of injection laser leads to the increase in modal gain, reduction in threshold current density at high mirror loss, and increase in maximum output power.

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Pascal:99-0386018

Le document en format XML

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<author><name sortKey="Alferov, Zh I" uniqKey="Alferov Z">Zh. I. Alferov</name>
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<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term>
<term>Experimental study</term>
<term>Gain</term>
<term>Gallium arsenides</term>
<term>Indium arsenides</term>
<term>Injection laser</term>
<term>Inorganic compounds</term>
<term>Molecular beam epitaxy</term>
<term>Photoluminescence</term>
<term>Quantum wires</term>
<term>Saturation</term>
<term>Self organization</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
<term>Threshold current</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>4255P</term>
<term>Etude expérimentale</term>
<term>Laser semiconducteur</term>
<term>Laser injection</term>
<term>Fil quantique</term>
<term>Autoorganisation</term>
<term>Epitaxie jet moléculaire</term>
<term>Photoluminescence</term>
<term>Courant seuil</term>
<term>Gain</term>
<term>Saturation</term>
<term>Composé minéral</term>
<term>Composé ternaire</term>
<term>Indium arséniure</term>
<term>Aluminium arséniure</term>
<term>Gallium arséniure</term>
<term>InAlAs</term>
<term>Al As In</term>
<term>InGaAs</term>
<term>As Ga In</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">Injection lasers based on self-organized (In,Ga)As/(Al,Ga)As quantum dots (QD) suffer from the gain saturation due to the limited amount of QD states participating in lasing. In the present work, we demonstrate the direct increase in the areal density of (In,Ga)As QDs. We used an array of (In,Al)As QDs demonstrating considerably higher density than Al-free QDs as nucleation centers for the (In,Ga)As QD formation. Finally, composite vertically coupled (In,Al)As/(In,Ga)As QDs with increased areal density are formed, which is confirmed by photoluminescence and TEM. Using the denser array of (In,Al)As/(In,Ga)As QDs in the active region of injection laser leads to the increase in modal gain, reduction in threshold current density at high mirror loss, and increase in maximum output power.</div>
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<s5>50</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Self organization</s0>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Autoorganización</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>52</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Courant seuil</s0>
<s5>53</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Threshold current</s0>
<s5>53</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Gain</s0>
<s5>54</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Gain</s0>
<s5>54</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Saturation</s0>
<s5>55</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Saturation</s0>
<s5>55</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>56</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>56</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>57</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>57</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>58</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>58</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Aluminium arséniure</s0>
<s2>NK</s2>
<s5>59</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>59</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>60</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>60</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InAlAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Al As In</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fN21><s1>249</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Molecular Beam Epitaxy</s1>
<s2>10</s2>
<s3>Cannes FRA</s3>
<s4>1998-08-31</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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   |texte=   Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers
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Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers

Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers

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