Long-wavelength Light-Emitting Diodes (λ = 3.4-3.9 μm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy
Identifieur interne : 000A32 ( Russie/Analysis ); précédent : 000A31; suivant : 000A33Long-wavelength Light-Emitting Diodes (λ = 3.4-3.9 μm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy
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Abstract
InAs/InAs0.93Sb0.07/InAs heterostructures were grown by metal-organic vapor-phase epitaxy in a horizontal reactor at atmospheric pressure. Based on the obtained structures, light-emitting diodes operating at λ = 3.45 μm (T = 77 K) and λ = 3.95 μm (T = 300 K) were fabricated. The room-temperature quantum efficiency of light-emitting diodes was 0.12%. © 2000 MAIK Nauka / Interperiodica .
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Kizhaev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg</wicri:regionArea><wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia</wicri:noRegion></affiliation></author><author><name sortKey="Molchanov, S S" uniqKey="Molchanov S">S. S. 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Based on the obtained structures, light-emitting diodes operating at λ = 3.45 μm (T = 77 K) and λ = 3.95 μm (T = 300 K) were fabricated. The room-temperature quantum efficiency of light-emitting diodes was 0.12%. © 2000 MAIK Nauka / Interperiodica .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0></fA01><fA02 i1="01"><s0>SMICES</s0></fA02><fA03 i2="1"><s0>Semiconductors</s0></fA03><fA05><s2>34</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Long-wavelength Light-Emitting Diodes (λ = 3.4-3.9 μm) Based on InAsSb/InAs Heterostructures Grown by Vapor-Phase Epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>ZOTOVA (N. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>KIZHAEV (S. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>MOLCHANOV (S. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>POPOVA (T. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>YAKOVLEV (Yu. P.)</s1></fA11><fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1402-1405</s1></fA20><fA21><s1>2000-12</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12492</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0516234</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductors</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>InAs/InAs<sub>0.93</sub>Sb<sub>0.07</sub>/InAs heterostructures were grown by metal-organic vapor-phase epitaxy in a horizontal reactor at atmospheric pressure. Based on the obtained structures, light-emitting diodes operating at λ = 3.45 μm (T = 77 K) and λ = 3.95 μm (T = 300 K) were fabricated. 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