Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
Identifieur interne : 000539 ( Russie/Analysis ); précédent : 000538; suivant : 000540Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
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Abstract
The effect of the growth temperature on the density, lateral size, and height of InAs-GaAs quantum dots (QD) has been studied by transmission electron microscopy. With the growth temperature increasing from 450 to 520°C, the density and height of QDs decrease, whereas their lateral size increases; i.e., the QDs are flattened. The blue shift of the photoluminescence line indicates decreasing QD volume. The observed behavior is in agreement with the thermodynamic model of QD formation. The effect of lowering the substrate temperature immediately after the formation of QDs on the QD parameters has been studied. On lowering the temperature, the lateral size of QDs decreases and their density increases; i.e., the parameters of QD arrays tend to acquire the equilibrium parameters corresponding at the temperature to which the cooling is done. The QD height rapidly increases with cooling and may exceed the equilibrium value for a finite time of cooling, which enables fabrication of QD arrays with a prescribed ratio between height and lateral size by choosing the time of cooling. © 2003 MAIK Nauka / Interperiodica .
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Maksimov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea><wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion></affiliation></author><author><name sortKey="Makarov, A G" uniqKey="Makarov A">A. G. Makarov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea><wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion></affiliation></author><author><name sortKey="Shchukin, V A" uniqKey="Shchukin V">V. A. 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Lukovskaya</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea><wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion></affiliation></author><author><name sortKey="Musikhin, Yu G" uniqKey="Musikhin Y">Yu. G. Musikhin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea><wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion></affiliation></author><author><name sortKey="Cirlin, G E" uniqKey="Cirlin G">G. E. 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Bert</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea><wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion></affiliation></author><author><name sortKey="Alferov, Zh I" uniqKey="Alferov Z">Zh. I. 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Ledentsov</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Technicshe Universitat Berlin, Berlin, D-10623 Germany</s1><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country wicri:rule="zip">Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Bimberg, D" uniqKey="Bimberg D">D. 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With the growth temperature increasing from 450 to 520°C, the density and height of QDs decrease, whereas their lateral size increases; i.e., the QDs are flattened. The blue shift of the photoluminescence line indicates decreasing QD volume. The observed behavior is in agreement with the thermodynamic model of QD formation. The effect of lowering the substrate temperature immediately after the formation of QDs on the QD parameters has been studied. On lowering the temperature, the lateral size of QDs decreases and their density increases; i.e., the parameters of QD arrays tend to acquire the equilibrium parameters corresponding at the temperature to which the cooling is done. The QD height rapidly increases with cooling and may exceed the equilibrium value for a finite time of cooling, which enables fabrication of QD arrays with a prescribed ratio between height and lateral size by choosing the time of cooling. © 2003 MAIK Nauka / Interperiodica .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0></fA01><fA02 i1="01"><s0>SMICES</s0></fA02><fA03 i2="1"><s0>Semiconductors</s0></fA03><fA05><s2>37</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode</s1></fA08><fA11 i1="01" i2="1"><s1>CHERKASHIN (N. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAKSIMOV (M. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAKAROV (A. G.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHCHUKIN (V. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>USTINOV (V. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>LUKOVSKAYA (N. V.)</s1></fA11><fA11 i1="07" i2="1"><s1>MUSIKHIN (Yu. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0317664</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductors</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The effect of the growth temperature on the density, lateral size, and height of InAs-GaAs quantum dots (QD) has been studied by transmission electron microscopy. With the growth temperature increasing from 450 to 520°C, the density and height of QDs decrease, whereas their lateral size increases; i.e., the QDs are flattened. The blue shift of the photoluminescence line indicates decreasing QD volume. The observed behavior is in agreement with the thermodynamic model of QD formation. The effect of lowering the substrate temperature immediately after the formation of QDs on the QD parameters has been studied. On lowering the temperature, the lateral size of QDs decreases and their density increases; i.e., the parameters of QD arrays tend to acquire the equilibrium parameters corresponding at the temperature to which the cooling is done. 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