Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
Identifieur interne : 000397 ( Russie/Analysis ); précédent : 000396; suivant : 000398Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
Auteurs : RBID : Pascal:04-0242397Descripteurs français
- Pascal (Inist)
- 8107S, 7867D, 8115H, 8165R, 7361G, 7361E, 7155E, 7155G, 7855, 7220M, 7321F, 7220F, Etude expérimentale, Aluminium composé, Indium composé, Cadmium composé, Magnésium composé, Semiconducteur II-VI, Couche épitaxique semiconductrice, Puits quantique semiconducteur, Croissance semiconducteur, Epitaxie jet moléculaire, Passivation, Photoluminescence, Effet Shubnikov de Haas, Gaz électron 2 dimensions, Densité électron, Mobilité électron.
English descriptors
- KwdEn :
- Aluminium compounds, Cadmium compounds, Electron density, Electron mobility, Experimental study, II-VI semiconductors, Indium compounds, Magnesium compounds, Molecular beam epitaxy, Passivation, Photoluminescence, Semiconductor epitaxial layers, Semiconductor growth, Semiconductor quantum wells, Shubnikov-de Haas effect, Two-dimensional electron gas.
Abstract
Asymmetric (6.7-300)-nm-thick InAs quantum wells (QWs) confined between AlAsSb and CdMgSe barriers have been fabricated by molecular-beam epitaxy. A special procedure of the CdMgSe-on-InAs growth initiation, exploiting an ex situ S passivation of InAs and in situ deposition of an ultrathin ZnTe buffer layer, results in the fabrication of high quality structures with a density of extended defects below 106 cm2. QW photoluminescence studies demonstrate a confinement effect and confirm the type I band alignment at the heterovalent InAs/CdMgSe interface mediated by the ZnTe interlayer. Observation of Shubnikov de Haas oscillations of magnetoresistance for an asymmetric 19-nm-thick InAs QW indicates an existence of the two-dimensional electron gas with the low-temperature sheet electron density of 1.3×1012 cm-2 and the mobility as high as ∼10000 cm2/Vs. © 2004 American Institute of Physics.
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Lyublinskaya</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Vasilyev, Yu B" uniqKey="Vasilyev Y">Yu. B. Vasilyev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kaygorodov, V A" uniqKey="Kaygorodov V">V. A. Kaygorodov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sorokin, S V" uniqKey="Sorokin S">S. V. Sorokin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sedova, I V" uniqKey="Sedova I">I. V. Sedova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Solovev, V A" uniqKey="Solovev V">V. A. Solovev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Meltser, B Ya" uniqKey="Meltser B">B. Ya. Meltser</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Sitnikova, A A" uniqKey="Sitnikova A">A. A. 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Lvova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Berkovits, V L" uniqKey="Berkovits V">V. L. Berkovits</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Toropov, A A" uniqKey="Toropov A">A. A. Toropov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kopev, P S" uniqKey="Kopev P">P. S. Kopev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021</wicri:regionArea><wicri:noRegion>St. Petersburg 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0242397</idno><date when="2004-06-07">2004-06-07</date><idno type="stanalyst">PASCAL 04-0242397 AIP</idno><idno type="RBID">Pascal:04-0242397</idno><idno type="wicri:Area/Main/Corpus">00B724</idno><idno type="wicri:Area/Main/Repository">00A414</idno><idno type="wicri:Area/Russie/Extraction">000397</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Cadmium compounds</term><term>Electron density</term><term>Electron mobility</term><term>Experimental study</term><term>II-VI semiconductors</term><term>Indium compounds</term><term>Magnesium compounds</term><term>Molecular beam epitaxy</term><term>Passivation</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Semiconductor quantum wells</term><term>Shubnikov-de Haas effect</term><term>Two-dimensional electron gas</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8107S</term><term>7867D</term><term>8115H</term><term>8165R</term><term>7361G</term><term>7361E</term><term>7155E</term><term>7155G</term><term>7855</term><term>7220M</term><term>7321F</term><term>7220F</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Indium composé</term><term>Cadmium composé</term><term>Magnésium composé</term><term>Semiconducteur II-VI</term><term>Couche épitaxique semiconductrice</term><term>Puits quantique semiconducteur</term><term>Croissance semiconducteur</term><term>Epitaxie jet moléculaire</term><term>Passivation</term><term>Photoluminescence</term><term>Effet Shubnikov de Haas</term><term>Gaz électron 2 dimensions</term><term>Densité électron</term><term>Mobilité électron</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Asymmetric (6.7-300)-nm-thick InAs quantum wells (QWs) confined between AlAsSb and CdMgSe barriers have been fabricated by molecular-beam epitaxy. A special procedure of the CdMgSe-on-InAs growth initiation, exploiting an ex situ S passivation of InAs and in situ deposition of an ultrathin ZnTe buffer layer, results in the fabrication of high quality structures with a density of extended defects below 10<sup>6</sup> cm<sup>2</sup>. QW photoluminescence studies demonstrate a confinement effect and confirm the type I band alignment at the heterovalent InAs/CdMgSe interface mediated by the ZnTe interlayer. Observation of Shubnikov de Haas oscillations of magnetoresistance for an asymmetric 19-nm-thick InAs QW indicates an existence of the two-dimensional electron gas with the low-temperature sheet electron density of 1.3×10<sup>12</sup> cm<sup>-2</sup> and the mobility as high as ∼10000 cm<sup>2</sup>/Vs. © 2004 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>IVANOV (S. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>LYUBLINSKAYA (O. G.)</s1></fA11><fA11 i1="03" i2="1"><s1>VASILYEV (Yu. B.)</s1></fA11><fA11 i1="04" i2="1"><s1>KAYGORODOV (V. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>SOROKIN (S. V.)</s1></fA11><fA11 i1="06" i2="1"><s1>SEDOVA (I. V.)</s1></fA11><fA11 i1="07" i2="1"><s1>SOLOVEV (V. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>MELTSER (B. Ya.)</s1></fA11><fA11 i1="09" i2="1"><s1>SITNIKOVA (A. A.)</s1></fA11><fA11 i1="10" i2="1"><s1>LVOVA (T. V.)</s1></fA11><fA11 i1="11" i2="1"><s1>BERKOVITS (V. L.)</s1></fA11><fA11 i1="12" i2="1"><s1>TOROPOV (A. A.)</s1></fA11><fA11 i1="13" i2="1"><s1>KOPEV (P. S.)</s1></fA11><fA14 i1="01"><s1>Ioffe Physico-Technical Institute of RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA20><s1>4777-4779</s1></fA20><fA21><s1>2004-06-07</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0242397</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Asymmetric (6.7-300)-nm-thick InAs quantum wells (QWs) confined between AlAsSb and CdMgSe barriers have been fabricated by molecular-beam epitaxy. A special procedure of the CdMgSe-on-InAs growth initiation, exploiting an ex situ S passivation of InAs and in situ deposition of an ultrathin ZnTe buffer layer, results in the fabrication of high quality structures with a density of extended defects below 10<sup>6</sup> cm<sup>2</sup>. QW photoluminescence studies demonstrate a confinement effect and confirm the type I band alignment at the heterovalent InAs/CdMgSe interface mediated by the ZnTe interlayer. Observation of Shubnikov de Haas oscillations of magnetoresistance for an asymmetric 19-nm-thick InAs QW indicates an existence of the two-dimensional electron gas with the low-temperature sheet electron density of 1.3×10<sup>12</sup> cm<sup>-2</sup> and the mobility as high as ∼10000 cm<sup>2</sup>/Vs. © 2004 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B80A07S</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="05" i2="3"><s0>001B70C61G</s0></fC02><fC02 i1="06" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="07" i2="3"><s0>001B70A55E</s0></fC02><fC02 i1="08" i2="3"><s0>001B70A55G</s0></fC02><fC02 i1="09" i2="3"><s0>001B70H55</s0></fC02><fC02 i1="10" i2="3"><s0>001B70B20M</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8107S</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8115H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8165R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7361G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7155E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>7155G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>7855</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>7220M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="11" i2="3" l="FRE"><s0>7321F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="12" i2="3" l="FRE"><s0>7220F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Cadmium composé</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Cadmium compounds</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Magnésium composé</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Magnesium compounds</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>II-VI semiconductors</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Passivation</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Passivation</s0></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Effet Shubnikov de Haas</s0></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Shubnikov-de Haas effect</s0></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Gaz électron 2 dimensions</s0></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Two-dimensional electron gas</s0></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Densité électron</s0></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Electron density</s0></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Mobilité électron</s0></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Electron mobility</s0></fC03><fN21><s1>152</s1></fN21><fN47 i1="01" i2="1"><s0>0421M000177</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|texte= Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
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