IndiumV3, Russie, Analysis, bibRecord, 000080

High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Identifieur interne : 000080 ( Russie/Analysis ); précédent : 000079; suivant : 000081

High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Auteurs : RBID : Pascal:12-0027182

Descripteurs français

Pascal (Inist)
- Arséniure d'indium, Semiconducteur III-V, Composé III-V, Epitaxie gouttelette, Synthèse nanomatériau, Epitaxie jet moléculaire, Mouillage, Mouillabilité, Plan expérience, Mécanisme croissance, Hétérointerface, Densité défaut, Interface, RHEED, InAs, 8116, 8115H, 8110A, 6114H.

English descriptors

KwdEn :
- Defect density, Droplet epitaxy, Experimental design, Growth mechanism, Heterointerface, III-V compound, III-V semiconductors, Indium arsenides, Interfaces, Molecular beam epitaxy, Nanomaterial synthesis, RHEED, Wettability, Wetting.

Abstract

Structures with InAs self-assembled quantum dots (QDs) in Al_0.9Ga_0.1As matrix were grown by droplet molecular beam epitaxy. Usually, it is considered that the wetting layer does not form in the droplet molecular beam epitaxy growth mode. However, a well-defined wetting layer is observed in our structures. We demonstrate that this wetting layer has a smooth heterointerface and exhibits a low concentration of defects-nonradiative centers. As a result, a high efficient carrier transfer from the wetting layer to the QDs occurs in the structures.

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Links to Exploration step

Pascal:12-0027182

Le document en format XML

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<term>Heterointerface</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Interfaces</term>
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<term>8110A</term>
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<front><div type="abstract" xml:lang="en">Structures with InAs self-assembled quantum dots (QDs) in Al<sub>0.9</sub>
Ga<sub>0.1</sub>
As matrix were grown by droplet molecular beam epitaxy. Usually, it is considered that the wetting layer does not form in the droplet molecular beam epitaxy growth mode. However, a well-defined wetting layer is observed in our structures. We demonstrate that this wetting layer has a smooth heterointerface and exhibits a low concentration of defects-nonradiative centers. As a result, a high efficient carrier transfer from the wetting layer to the QDs occurs in the structures.</div>
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Ga<sub>0.1</sub>
As matrix were grown by droplet molecular beam epitaxy. Usually, it is considered that the wetting layer does not form in the droplet molecular beam epitaxy growth mode. However, a well-defined wetting layer is observed in our structures. We demonstrate that this wetting layer has a smooth heterointerface and exhibits a low concentration of defects-nonradiative centers. As a result, a high efficient carrier transfer from the wetting layer to the QDs occurs in the structures.</s0>
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High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

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English descriptors

Abstract

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