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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Interface tension < Interfaces < Interfaces (materials)  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000019 (2013) Microstructure of Interfaces in Heterosystems
000071 (2011) New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires
000080 (2011) High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy
000146 (2009) Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface
000201 (2008) MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
000221 (2007) Theoretical confirmation of the crystallization of a compound alloy using the AHP crystal growth method
000227 (2007) Solid-state spreading of oxides : Morphology and conductivity of In2O3-based films
000243 (2007) Junction formation of CuInSe2 with CdS: A comparative study of "dry" and "wet" interfaces
000267 (2007) Charge accumulation in ultrathin Cs/n-GaN and Cs/n-InGaN interfaces
000313 (2006) Investigation of electronic structure of Si nanocrystals and their interface with host matrix in P-doped SiO2:Si and Al2O3:Si nanocomposites
000386 (2005) Chemistry and electronic properties of a metal-organic semiconductor interface : In on CuPc
000442 (2004) Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness
000454 (2004) Plasma-assisted MBE growth and characterization of InN on sapphire
000467 (2004) Lateral optical anisotropy of type-II interfaces in the tight-binding approach
000480 (2004) Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000680 (2003) Effective mass anisotropy of r-electrons in GaAs/AlGaAs quantum well with InAs layer
000810 (2002) Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates
000818 (2002) Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction
001439 (1994-05) Study of InP/InGaAs heterostructures by a photovoltage method using an organic liquid

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