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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Wafer bonding < Wafers < Wall effect  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000227 (2013) Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition
000515 (2012) Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range
000621 (2012) Annealing of indium-doped CdMnTe single crystals under Cd vapors
000758 (2011) Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
000837 (2011) High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000C76 (2009) Thermal treatment of indium-doped Cd1-xZnxTe single crystals
000E01 (2009) Multicolor electrochromic ultrathin films based on neutral red and polyoxometalate
001201 (2008) Defect characterization and composition distributions of mercury indium telluride single crystals
001262 (2007) The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001476 (2007) Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
001814 (2005) Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD
001995 (2004) Indium phosphide crystal growth from phosphorus-rich melt
001B77 (2003) Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
001D45 (2002) Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour
002475 (1997) Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method
002732 (1995) Alkaline polishing of InP using double-pouring technique
002741 (1994-10-01) Determination of surface roughness of InP (001) wafers by x-ray scattering

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