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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Semiconductor growth < Semiconductor heterojunctions < Semiconductor insulator contact  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]
Ident.Authors (with country if any)Title
001888 (2004-05) Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy
001897 (2004-04-05) Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells
001907 (2004-03-15) Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures
001A57 (2003-12-05) Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures
001A64 (2003-10-27) Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)]
001A79 (2003-08-18) Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K
001C90 (2002-04-15) Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures
001D05 (2002-02-01) Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer
001E19 (2001-12) Correlation of Photoreflectance Spectra with Performance of GaInP/GaAs Heterojunction Bipolar Transistors
001E20 (2001-12) Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors
001E48 (2001-05-28) Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction
001E59 (2001-03-26) Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact
001E63 (2001-03) Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes
001E75 (2001-01-15) An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel
002017 (2000-05-22) In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
002026 (2000-03-15) Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
002027 (2000-03-15) Spin splitting in pseudomorphic InxGa1-xAs/InyAl1-yAs graded heterostructures
002029 (2000-03) Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs schottky diodes
002149 (1999-12-15) GaInAsSb/InP heterojunction band offset: Measurement by absorption spectroscopy
002159 (1999-11-08) Persistent photoconductivity in InGaP/GaAs heterostructures
002193 (1999-04-05) Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors

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