Semiconductor fiber ring laser < Semiconductor growth < Semiconductor heterojunctions

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List of bibliographic references

Number of relevant bibliographic references: 49.
[0-20] [0 - 20][0 - 49][20-40]

Ident.	Authors (with country if any)	Title
000073 (2013)		Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
001878 (2004-06-15)		20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source
001886 (2004-05-10)		Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
001889 (2004-05)		Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy
001891 (2004-05)		Growth of InGaN self-assembled quantum dots and their application to photodiodes
001896 (2004-04-05)		On the origin of spin loss in GaMnN/InGaN light-emitting diodes
001914 (2004-02-23)		Observation of spontaneous ordering in the optoelectronic material GaInNP
001A54 (2003-12-22)		InN island shape and its dependence on growth condition of molecular-beam epitaxy
001A89 (2003-06-23)		Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
001C60 (2002-10-14)		Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates
001C85 (2002-05)		Growth and coalescence evolution of InAs on GaAs by molecular beam epitaxy
001C87 (2002-05)		1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region
001C96 (2002-03-18)		Real index-guided InGaAlP red lasers with buried tunnel junctions
001D05 (2002-02-01)		Characteristics of δ-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 Schottky layer
001D07 (2002-01-28)		InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
001D09 (2002-01-14)		Selective growth of single InAs quantum dots using strain engineering
001E14 (2001-12-15)		Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells
001E58 (2001-04-01)		Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates
001E65 (2001-02-19)		Temperature invariant lasing and gain spectra in self-assembled GaInAs quantum wire Fabry-Perot lasers
001E70 (2001-02-12)		Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers
001E78 (2001-01)		Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy

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